DE60238752D1 - Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur - Google Patents
Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-strukturInfo
- Publication number
- DE60238752D1 DE60238752D1 DE60238752T DE60238752T DE60238752D1 DE 60238752 D1 DE60238752 D1 DE 60238752D1 DE 60238752 T DE60238752 T DE 60238752T DE 60238752 T DE60238752 T DE 60238752T DE 60238752 D1 DE60238752 D1 DE 60238752D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- gas
- supply members
- gas supply
- silicon structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 238000007599 discharging Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Micromachines (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001096077 | 2001-03-29 | ||
PCT/JP2002/002807 WO2002079080A1 (fr) | 2001-03-29 | 2002-03-22 | Dispositif et procede de production d'une structure a base de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60238752D1 true DE60238752D1 (de) | 2011-02-10 |
Family
ID=18950044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60238752T Expired - Lifetime DE60238752D1 (de) | 2001-03-29 | 2002-03-22 | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
Country Status (9)
Country | Link |
---|---|
US (2) | US20040094086A1 (de) |
EP (1) | EP1382565B1 (de) |
KR (1) | KR100565032B1 (de) |
CN (1) | CN1263674C (de) |
AT (1) | ATE493368T1 (de) |
DE (1) | DE60238752D1 (de) |
HK (1) | HK1061836A1 (de) |
TW (1) | TWI251626B (de) |
WO (1) | WO2002079080A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60238752D1 (de) * | 2001-03-29 | 2011-02-10 | Toyota Chuo Kenkyusho Kk | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
US7813634B2 (en) | 2005-02-28 | 2010-10-12 | Tessera MEMS Technologies, Inc. | Autofocus camera |
JP3882806B2 (ja) * | 2003-10-29 | 2007-02-21 | ソニー株式会社 | エッチング方法 |
JP2005150332A (ja) * | 2003-11-14 | 2005-06-09 | Sony Corp | エッチング方法 |
JP2005288672A (ja) * | 2004-04-06 | 2005-10-20 | Mitsubishi Heavy Ind Ltd | 微小構造体の製造方法及び製造装置 |
JP2005288673A (ja) * | 2004-04-06 | 2005-10-20 | Mitsubishi Heavy Ind Ltd | 微小構造体の製造装置 |
US7838322B1 (en) * | 2005-02-28 | 2010-11-23 | Tessera MEMS Technologies, Inc. | Method of enhancing an etch system |
JP4766115B2 (ja) * | 2006-08-24 | 2011-09-07 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
JP2010162629A (ja) * | 2009-01-14 | 2010-07-29 | Seiko Epson Corp | Memsデバイスの製造方法 |
JP5317826B2 (ja) | 2009-05-19 | 2013-10-16 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法 |
TWI569322B (zh) * | 2009-12-02 | 2017-02-01 | 史畢茲科技公司 | 高選擇性蝕刻系統與方法 |
JP5468133B2 (ja) * | 2010-05-14 | 2014-04-09 | パナソニック株式会社 | 固体撮像装置 |
US8458888B2 (en) | 2010-06-25 | 2013-06-11 | International Business Machines Corporation | Method of manufacturing a micro-electro-mechanical system (MEMS) |
US20120256333A1 (en) * | 2010-12-21 | 2012-10-11 | Toyota Motor Corporation | Process for manufacturing a stand-alone multilayer thin film |
GB2487716B (en) * | 2011-01-24 | 2015-06-03 | Memsstar Ltd | Vapour Etch of Silicon Dioxide with Improved Selectivity |
JP5875243B2 (ja) * | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
JP2013057526A (ja) | 2011-09-07 | 2013-03-28 | Seiko Epson Corp | 赤外線検出素子、赤外線検出素子の製造方法及び電子機器 |
JP6532429B2 (ja) | 2016-06-01 | 2019-06-19 | 三菱電機株式会社 | 半導体圧力センサ |
CN108847391B (zh) * | 2018-06-01 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 一种非等离子干法刻蚀方法 |
GB202117751D0 (en) * | 2019-11-14 | 2022-01-26 | Memsstar Ltd | Method of manufacturing a microstructure |
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US10A (en) * | 1836-08-10 | Gtttlslto andi | ||
US11A (de) * | 1836-08-10 | |||
US3A (en) * | 1836-08-11 | Thomas blanchard | ||
US62A (en) * | 1836-10-20 | Cooking-stove | ||
US58A (en) * | 1836-10-19 | |||
US38A (en) * | 1836-10-04 | Horizontal boot-clamp | ||
US2A (en) * | 1826-12-15 | 1836-07-29 | mode of manufacturing wool or other fibrous materials | |
JPS3825061B1 (de) * | 1961-06-09 | 1963-11-26 | ||
US4190488A (en) * | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
JPS58130531A (ja) * | 1982-01-28 | 1983-08-04 | Nec Home Electronics Ltd | 薄膜エツチング方法 |
JPH0770515B2 (ja) * | 1985-08-01 | 1995-07-31 | 株式会社東芝 | 表面処理方法 |
WO1987001508A1 (en) * | 1985-08-28 | 1987-03-12 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
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JPH02187025A (ja) * | 1989-01-13 | 1990-07-23 | Sanyo Electric Co Ltd | エッチング方法及びx線リソグラフィ用マスクの製造方法 |
JPH02207524A (ja) * | 1989-02-08 | 1990-08-17 | Hitachi Ltd | 微細加工方法およびその製造装置 |
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JPH03127830A (ja) * | 1989-10-13 | 1991-05-30 | Fujitsu Ltd | 半導体基板の清浄方法 |
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DE60238752D1 (de) * | 2001-03-29 | 2011-02-10 | Toyota Chuo Kenkyusho Kk | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
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-
2002
- 2002-03-22 DE DE60238752T patent/DE60238752D1/de not_active Expired - Lifetime
- 2002-03-22 AT AT02707133T patent/ATE493368T1/de not_active IP Right Cessation
- 2002-03-22 EP EP02707133A patent/EP1382565B1/de not_active Expired - Lifetime
- 2002-03-22 US US10/473,253 patent/US20040094086A1/en not_active Abandoned
- 2002-03-22 WO PCT/JP2002/002807 patent/WO2002079080A1/ja active Application Filing
- 2002-03-22 KR KR1020037012521A patent/KR100565032B1/ko not_active IP Right Cessation
- 2002-03-22 CN CNB028036514A patent/CN1263674C/zh not_active Expired - Fee Related
- 2002-03-28 TW TW091106219A patent/TWI251626B/zh not_active IP Right Cessation
-
2004
- 2004-07-06 HK HK04104838A patent/HK1061836A1/xx not_active IP Right Cessation
-
2008
- 2008-01-30 US US12/022,811 patent/US20080257497A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1382565A4 (de) | 2005-11-16 |
WO2002079080A1 (fr) | 2002-10-10 |
KR100565032B1 (ko) | 2006-03-30 |
TWI251626B (en) | 2006-03-21 |
EP1382565A1 (de) | 2004-01-21 |
US20080257497A1 (en) | 2008-10-23 |
US20040094086A1 (en) | 2004-05-20 |
KR20040054611A (ko) | 2004-06-25 |
CN1484611A (zh) | 2004-03-24 |
EP1382565B1 (de) | 2010-12-29 |
ATE493368T1 (de) | 2011-01-15 |
CN1263674C (zh) | 2006-07-12 |
HK1061836A1 (en) | 2004-10-08 |
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