ATE353475T1 - Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche - Google Patents

Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche

Info

Publication number
ATE353475T1
ATE353475T1 AT02292517T AT02292517T ATE353475T1 AT E353475 T1 ATE353475 T1 AT E353475T1 AT 02292517 T AT02292517 T AT 02292517T AT 02292517 T AT02292517 T AT 02292517T AT E353475 T1 ATE353475 T1 AT E353475T1
Authority
AT
Austria
Prior art keywords
producing
substrate surface
adhesive surface
substrate
adhesive substrate
Prior art date
Application number
AT02292517T
Other languages
English (en)
Inventor
Christophe Maleville
Corinne Maunand-Tussot
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE353475T1 publication Critical patent/ATE353475T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT02292517T 2002-10-11 2002-10-11 Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche ATE353475T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02292517A EP1408534B1 (de) 2002-10-11 2002-10-11 Verfahren und Vorrichtung zur Herstellung einer haftenden Substratoberfläche
US46592303P 2003-04-24 2003-04-24

Publications (1)

Publication Number Publication Date
ATE353475T1 true ATE353475T1 (de) 2007-02-15

Family

ID=32773620

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02292517T ATE353475T1 (de) 2002-10-11 2002-10-11 Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche

Country Status (4)

Country Link
US (1) US20040069321A1 (de)
EP (1) EP1408534B1 (de)
JP (1) JP2004200653A (de)
AT (1) ATE353475T1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8920391B2 (en) * 2004-06-18 2014-12-30 Sunless, Inc. Container for system for spray coating human subject
US20100129557A1 (en) * 2004-06-18 2010-05-27 Mt Industries, Inc. Spray coating at least one portion of a subject
US20070197982A1 (en) * 2006-01-05 2007-08-23 Scott Thomason Automatic body spray system
US20050279865A1 (en) * 2004-06-18 2005-12-22 Innovative Developments, Llc Fluid spraying system
JP5317529B2 (ja) * 2008-05-02 2013-10-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの処理方法及び処理装置
US8598039B2 (en) * 2008-08-20 2013-12-03 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
DE102008061521B4 (de) * 2008-12-10 2011-12-08 Siltronic Ag Verfahren zur Behandlung einer Halbleiterscheibe
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
EP2390925A1 (de) * 2010-05-31 2011-11-30 Applied Materials, Inc. Herstellungsverfahren für Dünnfilmsolarzelle, Ätzverfahren, Vorrichtung zum Ätzen und Dünnfilmsolarvorrichtung

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158100A (en) * 1989-05-06 1992-10-27 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefor
JP2581268B2 (ja) * 1990-05-22 1997-02-12 日本電気株式会社 半導体基板の処理方法
JPH0719739B2 (ja) * 1990-09-10 1995-03-06 信越半導体株式会社 接合ウェーハの製造方法
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
US5634978A (en) * 1994-11-14 1997-06-03 Yieldup International Ultra-low particle semiconductor method
JPH08264500A (ja) * 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
US5714203A (en) * 1995-08-23 1998-02-03 Ictop Entwicklungs Gmbh Procedure for the drying of silicon
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
JPH10144650A (ja) * 1996-11-11 1998-05-29 Mitsubishi Electric Corp 半導体材料の洗浄装置
US6027602A (en) * 1997-08-29 2000-02-22 Techpoint Pacific Singapore Pte. Ltd. Wet processing apparatus
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6701941B1 (en) * 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US20020066464A1 (en) * 1997-05-09 2002-06-06 Semitool, Inc. Processing a workpiece using ozone and sonic energy
AU8070498A (en) * 1997-06-13 1998-12-30 Cfmt, Inc. Methods for treating semiconductor wafers
US6423613B1 (en) * 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
DE19853486A1 (de) * 1998-11-19 2000-05-31 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Behandlung von Halbleiterscheiben
US6240939B1 (en) * 1999-03-22 2001-06-05 Mcgee Charles P. Windbreak
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
JP4344855B2 (ja) * 1999-08-06 2009-10-14 野村マイクロ・サイエンス株式会社 電子デバイス用基板の有機汚染防止法及び有機汚染を防止した電子デバイス用基板
US6286231B1 (en) * 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US6492283B2 (en) * 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
FR2806892B1 (fr) * 2000-03-29 2002-06-14 Oreal Boitier du type boitier de maquillage comportant un couvercle articule
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
JP4914536B2 (ja) * 2001-02-28 2012-04-11 東京エレクトロン株式会社 酸化膜形成方法
US6821908B1 (en) * 2001-09-10 2004-11-23 Mia-Com Inc., In-situ method for producing a hydrogen terminated hydrophobic surface on a silicon wafer
US20030087532A1 (en) * 2001-11-01 2003-05-08 Biao Wu Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices

Also Published As

Publication number Publication date
EP1408534B1 (de) 2007-02-07
US20040069321A1 (en) 2004-04-15
EP1408534A1 (de) 2004-04-14
JP2004200653A (ja) 2004-07-15

Similar Documents

Publication Publication Date Title
DE50104638D1 (de) Verfahren zur herstellung eines mikrofluidbauelements
DE60236470D1 (de) Halbleitersubstratvorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
EP2023376A3 (de) Ätzende Behandlungsverfahren für Substratoberflächen und Kammeroberflächen
DE69231348D1 (de) Verfahren zur Herstellung eines Halbleiterkörpers
TW200509187A (en) Substrate manufacturing method and substrate processing apparatus
EP1420298A3 (de) Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
ATE330694T1 (de) Mikrofluider antimikrobieller filter
ATE505813T1 (de) Herstellung von luftspalten um eine verbindungsleitung herum
DE59407404D1 (de) Mikromechanische vorrichtung und verfahren zu deren herstellung
ATE493368T1 (de) Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur
TW200625435A (en) Increasing die strength by etching during or after dicing
DE60204502D1 (de) Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer
ATE445003T1 (de) Ph-gepufferte, wässrige reinigungszusammensetzung und verfahren zur entfernung von fotolack- rückständen
ATE353475T1 (de) Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche
TW200735214A (en) Making method for semiconductor device and the substrate handling system
TW200615715A (en) Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
TW200644048A (en) Manufacturing method of semiconductor device
DE60321734D1 (de) Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens
DE602004015449D1 (de) Verfahren zur herstellung einer thermoelektrischen vorrichtung
DE60317264D1 (de) Verfahren zur Herstellung von Mikrohalbleiterbauelementen
TW200620460A (en) Method of manufacturing a semiconductor device, and a semiconductor substrate
TW200721311A (en) Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device
DE60225135D1 (de) Verfahren zur herstellung eines halbleiterswafers
ATE332211T1 (de) Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten
DE60230732D1 (de) Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties