DE60317264D1 - Verfahren zur Herstellung von Mikrohalbleiterbauelementen - Google Patents

Verfahren zur Herstellung von Mikrohalbleiterbauelementen

Info

Publication number
DE60317264D1
DE60317264D1 DE60317264T DE60317264T DE60317264D1 DE 60317264 D1 DE60317264 D1 DE 60317264D1 DE 60317264 T DE60317264 T DE 60317264T DE 60317264 T DE60317264 T DE 60317264T DE 60317264 D1 DE60317264 D1 DE 60317264D1
Authority
DE
Germany
Prior art keywords
production
semiconductor devices
micro semiconductor
micro
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60317264T
Other languages
English (en)
Other versions
DE60317264T2 (de
Inventor
Naoyuki Koizumi
Naohiro Mashino
Takashi Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Application granted granted Critical
Publication of DE60317264D1 publication Critical patent/DE60317264D1/de
Publication of DE60317264T2 publication Critical patent/DE60317264T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
DE60317264T 2002-06-11 2003-06-06 Verfahren zur Herstellung von Mikrohalbleiterbauelementen Expired - Fee Related DE60317264T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002169466 2002-06-11
JP2002169466A JP2004014956A (ja) 2002-06-11 2002-06-11 微小半導体素子の加工処理方法

Publications (2)

Publication Number Publication Date
DE60317264D1 true DE60317264D1 (de) 2007-12-20
DE60317264T2 DE60317264T2 (de) 2008-08-21

Family

ID=29561736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60317264T Expired - Fee Related DE60317264T2 (de) 2002-06-11 2003-06-06 Verfahren zur Herstellung von Mikrohalbleiterbauelementen

Country Status (6)

Country Link
US (1) US6872634B2 (de)
EP (1) EP1372192B1 (de)
JP (1) JP2004014956A (de)
KR (1) KR20030095351A (de)
CN (1) CN1467797A (de)
DE (1) DE60317264T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786562B2 (en) * 1997-11-11 2010-08-31 Volkan Ozguz Stackable semiconductor chip layer comprising prefabricated trench interconnect vias
JP4514490B2 (ja) * 2004-03-29 2010-07-28 日東電工株式会社 半導体ウエハの小片化方法
KR100539271B1 (ko) 2004-07-26 2005-12-27 삼성전자주식회사 휨 방지 재질을 사용하는 반도체 칩의 다이 접착 방법
CN100517645C (zh) * 2005-01-24 2009-07-22 松下电器产业株式会社 半导体芯片的制造方法及半导体芯片
JP2006205678A (ja) * 2005-01-31 2006-08-10 Fuji Photo Film Co Ltd ノズルプレート製造方法及び液体吐出ヘッド並びにこれを備えた画像形成装置
US7545276B2 (en) 2005-09-13 2009-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5322346B2 (ja) 2007-06-07 2013-10-23 株式会社半導体エネルギー研究所 半導体装置
JP5301299B2 (ja) 2008-01-31 2013-09-25 株式会社半導体エネルギー研究所 半導体装置
JP2009205669A (ja) 2008-01-31 2009-09-10 Semiconductor Energy Lab Co Ltd 半導体装置
JP2010056562A (ja) * 2009-11-26 2010-03-11 Nitto Denko Corp 半導体チップの製造方法
EP2363878A1 (de) * 2010-03-03 2011-09-07 ENCRLIGHTING Corp. Herstellungsverfahren für eine Flip-Chip Leuchtdiode
WO2012112937A2 (en) * 2011-02-18 2012-08-23 Applied Materials, Inc. Method and system for wafer level singulation
KR101322579B1 (ko) 2012-05-25 2013-10-28 세메스 주식회사 마운팅 테이프 확장 모듈 및 이를 포함하는 반도체 소자들을 픽업하기 위한 장치
US8969177B2 (en) * 2012-06-29 2015-03-03 Applied Materials, Inc. Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
CN104882401A (zh) * 2014-02-27 2015-09-02 联咏科技股份有限公司 可重复使用的芯片承载盘及芯片承载与挑拣系统
DE102014227005B4 (de) 2014-12-29 2023-09-07 Disco Corporation Verfahren zum Aufteilen eines Wafers in Chips
EP3234992B1 (de) * 2016-01-29 2018-09-26 JENOPTIK Optical Systems GmbH Verfahren und vorrichtung zum herauslösen eines mikro-chips aus einem wafer und aufbringen des mikro-chips auf ein substrat
JP6762651B2 (ja) * 2016-02-22 2020-09-30 株式会社ディスコ 加工方法
WO2023016625A1 (en) * 2021-08-09 2023-02-16 X-Celeprint Limited Integrated-circuit module collection and deposition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480842A (en) 1994-04-11 1996-01-02 At&T Corp. Method for fabricating thin, strong, and flexible die for smart cards
JP3438369B2 (ja) 1995-01-17 2003-08-18 ソニー株式会社 部材の製造方法
JPH098095A (ja) * 1995-06-22 1997-01-10 Fuji Electric Co Ltd 積層半導体ウエハの分離装置およびその分離方法
US6342434B1 (en) 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
JPH1010017A (ja) * 1996-06-24 1998-01-16 Yokogawa Electric Corp パーティクルサンプラ
JPH1140520A (ja) 1997-07-23 1999-02-12 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
US6162703A (en) 1998-02-23 2000-12-19 Micron Technology, Inc. Packaging die preparation
DE19811115A1 (de) * 1998-03-14 1999-09-16 Stromberg Michael Verfahren zur Behandlung von Wafern beim Dünnen und Sägen
DE19850873A1 (de) 1998-11-05 2000-05-11 Philips Corp Intellectual Pty Verfahren zum Bearbeiten eines Erzeugnisses der Halbleitertechnik
JP2001044144A (ja) * 1999-08-03 2001-02-16 Tokyo Seimitsu Co Ltd 半導体チップの製造プロセス
FR2798513B1 (fr) * 1999-09-10 2002-03-22 Gemplus Card Int Procede pour le report de microplaquettes de circuit integre et dispositif utilise
JP2001126225A (ja) 1999-10-21 2001-05-11 Tdk Corp 磁気ヘッドスライダの製造方法およびバーの固定方法ならびに硬化剤
JP2001345368A (ja) 2000-05-31 2001-12-14 Fujitsu Ltd 半導体チップ剥離・搬送方法及び装置
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer

Also Published As

Publication number Publication date
JP2004014956A (ja) 2004-01-15
DE60317264T2 (de) 2008-08-21
EP1372192A3 (de) 2004-06-16
CN1467797A (zh) 2004-01-14
EP1372192A2 (de) 2003-12-17
KR20030095351A (ko) 2003-12-18
EP1372192B1 (de) 2007-11-07
US6872634B2 (en) 2005-03-29
US20030228719A1 (en) 2003-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee