DE602006010775D1 - Verfahren zur Herstellung von Siliziumscheiben - Google Patents

Verfahren zur Herstellung von Siliziumscheiben

Info

Publication number
DE602006010775D1
DE602006010775D1 DE602006010775T DE602006010775T DE602006010775D1 DE 602006010775 D1 DE602006010775 D1 DE 602006010775D1 DE 602006010775 T DE602006010775 T DE 602006010775T DE 602006010775 T DE602006010775 T DE 602006010775T DE 602006010775 D1 DE602006010775 D1 DE 602006010775D1
Authority
DE
Germany
Prior art keywords
production
silicon wafers
wafers
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006010775T
Other languages
English (en)
Inventor
Sakae Koyata
Tomohiro Hashii
Katsuhiko Murayama
Kazushige Takaishi
Takeo Katoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of DE602006010775D1 publication Critical patent/DE602006010775D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602006010775T 2005-08-17 2006-08-14 Verfahren zur Herstellung von Siliziumscheiben Active DE602006010775D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005236255A JP4835069B2 (ja) 2005-08-17 2005-08-17 シリコンウェーハの製造方法

Publications (1)

Publication Number Publication Date
DE602006010775D1 true DE602006010775D1 (de) 2010-01-14

Family

ID=37441561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006010775T Active DE602006010775D1 (de) 2005-08-17 2006-08-14 Verfahren zur Herstellung von Siliziumscheiben

Country Status (8)

Country Link
US (1) US7648890B2 (de)
EP (1) EP1755156B1 (de)
JP (1) JP4835069B2 (de)
CN (1) CN100435288C (de)
DE (1) DE602006010775D1 (de)
MY (1) MY143651A (de)
SG (1) SG130148A1 (de)
TW (1) TWI346356B (de)

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* Cited by examiner, † Cited by third party
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US20080206992A1 (en) * 2006-12-29 2008-08-28 Siltron Inc. Method for manufacturing high flatness silicon wafer
CN101459047B (zh) * 2007-12-13 2010-11-10 中芯国际集成电路制造(上海)有限公司 半导体晶片表面的清洗方法
JP2009267159A (ja) * 2008-04-25 2009-11-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造装置及び方法
US8566076B2 (en) 2008-05-28 2013-10-22 International Business Machines Corporation System and method for applying bridging models for robust and efficient speech to speech translation
JP5428214B2 (ja) * 2008-06-19 2014-02-26 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法、半導体ウェーハ、及び、半導体ウェーハの結晶評価方法
WO2011105255A1 (ja) * 2010-02-26 2011-09-01 株式会社Sumco 半導体ウェーハの製造方法
CN102212824A (zh) * 2010-04-09 2011-10-12 中国科学院微电子研究所 一种单侧硅片湿法腐蚀设备
CN103187242B (zh) * 2011-12-31 2016-08-24 中芯国际集成电路制造(上海)有限公司 提高晶圆的刻蚀cd均匀度的装置和方法
CN102768952B (zh) * 2012-08-01 2014-12-17 宁波尤利卡太阳能科技发展有限公司 扩散后单晶硅片次品返工方法
CN103964371B (zh) * 2013-01-29 2016-07-06 无锡华润上华半导体有限公司 硅晶片的钝化层的腐蚀方法
US9281251B2 (en) * 2013-08-09 2016-03-08 Tokyo Electron Limited Substrate backside texturing
US9418865B2 (en) * 2013-12-26 2016-08-16 Intermolecular, Inc. Wet etching of silicon containing antireflective coatings
CN103943496B (zh) * 2014-05-16 2016-09-07 南通皋鑫电子股份有限公司 高压二极管硅块台面腐蚀工艺
CN105826165A (zh) * 2015-01-07 2016-08-03 北京华进创威电子有限公司 原位刻蚀方法
CN105826173A (zh) * 2015-01-07 2016-08-03 北京华进创威电子有限公司 用于SiC异质外延生长的原位刻蚀方法
CN105470108B (zh) * 2015-09-28 2018-12-04 阳光中科（福建）能源股份有限公司 一种太阳能电池扩散烧焦片的返工处理方法
CN108400081A (zh) * 2017-02-08 2018-08-14 上海新昇半导体科技有限公司 硅片的制作方法
KR20200100914A (ko) * 2019-02-18 2020-08-27 삼성디스플레이 주식회사 디스플레이 패널 및 그 제조방법
CN113614890A (zh) 2019-04-15 2021-11-05 信越半导体株式会社 硅晶圆的蚀刻方法及蚀刻装置
JP6761917B1 (ja) * 2019-11-29 2020-09-30 Ｊｘ金属株式会社 リン化インジウム基板、半導体エピタキシャルウエハ、及びリン化インジウム基板の製造方法
JP7056685B2 (ja) 2020-05-27 2022-04-19 信越半導体株式会社 シリコンウェーハのエッチング方法
KR20240026193A (ko) * 2021-06-24 2024-02-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 시스템 및 컴퓨터 기억 매체

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270400A (ja) * 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
US5942449A (en) * 1996-08-28 1999-08-24 Micron Technology, Inc. Method for removing an upper layer of material from a semiconductor wafer
JPH11135474A (ja) * 1997-10-30 1999-05-21 Komatsu Electron Metals Co Ltd 半導体鏡面ウェハおよびその製造方法
JPH11135464A (ja) 1997-10-30 1999-05-21 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP3441979B2 (ja) * 1997-12-09 2003-09-02 信越半導体株式会社 半導体ウエーハの加工方法および半導体ウエーハ
JP3329288B2 (ja) * 1998-11-26 2002-09-30 信越半導体株式会社 半導体ウエーハおよびその製造方法
US6294469B1 (en) * 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
JP3797593B2 (ja) * 1999-11-25 2006-07-19 日本化成株式会社 エッチング制御方法
KR20020031347A (ko) * 2000-04-27 2002-05-01 와다 다다시 반도체웨이퍼 및 반도체디바이스 제작프로세스용 장치
WO2002001616A1 (fr) * 2000-06-29 2002-01-03 Shin-Etsu Handotai Co., Ltd. Procede de traitement d'une plaquette de semi-conducteur et plaquette de semi-conducteur
WO2002003432A2 (en) * 2000-06-30 2002-01-10 Memc Electronic Materials, Inc. Process for etching silicon wafers
JP2003100701A (ja) * 2001-09-27 2003-04-04 Sumitomo Mitsubishi Silicon Corp シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法
US20040108297A1 (en) * 2002-09-18 2004-06-10 Memc Electronic Materials, Inc. Process for etching silicon wafers
DE10302611B4 (de) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild
JP2004356252A (ja) * 2003-05-28 2004-12-16 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
KR200331009Y1 (ko) 2003-07-29 2003-10-22 이미자 세면대용 배수트랩
JP2005175106A (ja) * 2003-12-10 2005-06-30 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
JP4700333B2 (ja) * 2003-12-22 2011-06-15 シルトロニック・ジャパン株式会社 シリコンウエーハ用の高純度アルカリエッチング液およびシリコンウエーハアルカリエッチング方法
JP3778204B2 (ja) 2004-01-23 2006-05-24 ダイキン工業株式会社 ウェハ温度調整装置及びウェハ温度調整方法

Also Published As

Publication number Publication date
SG130148A1 (en) 2007-03-20
TWI346356B (en) 2011-08-01
MY143651A (en) 2011-06-30
CN100435288C (zh) 2008-11-19
JP2007053178A (ja) 2007-03-01
EP1755156B1 (de) 2009-12-02
US7648890B2 (en) 2010-01-19
EP1755156A3 (de) 2008-05-07
US20070042567A1 (en) 2007-02-22
TW200725726A (en) 2007-07-01
CN1917151A (zh) 2007-02-21
JP4835069B2 (ja) 2011-12-14
EP1755156A2 (de) 2007-02-21

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