DE602005015554D1 - Verfahren zur herstellung von silicium - Google Patents

Verfahren zur herstellung von silicium

Info

Publication number
DE602005015554D1
DE602005015554D1 DE602005015554T DE602005015554T DE602005015554D1 DE 602005015554 D1 DE602005015554 D1 DE 602005015554D1 DE 602005015554 T DE602005015554 T DE 602005015554T DE 602005015554 T DE602005015554 T DE 602005015554T DE 602005015554 D1 DE602005015554 D1 DE 602005015554D1
Authority
DE
Germany
Prior art keywords
preparing silicon
silicon
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005015554T
Other languages
English (en)
Inventor
Tim Poepken
Raymund Sonnenschein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Evonik Degussa GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa GmbH filed Critical Evonik Degussa GmbH
Publication of DE602005015554D1 publication Critical patent/DE602005015554D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE602005015554T 2004-03-02 2005-01-06 Verfahren zur herstellung von silicium Active DE602005015554D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004010055A DE102004010055A1 (de) 2004-03-02 2004-03-02 Verfahren zur Herstellung von Silicium
PCT/EP2005/050043 WO2005085133A1 (en) 2004-03-02 2005-01-06 Process for producing silicon

Publications (1)

Publication Number Publication Date
DE602005015554D1 true DE602005015554D1 (de) 2009-09-03

Family

ID=34877232

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004010055A Withdrawn DE102004010055A1 (de) 2004-03-02 2004-03-02 Verfahren zur Herstellung von Silicium
DE602005015554T Active DE602005015554D1 (de) 2004-03-02 2005-01-06 Verfahren zur herstellung von silicium

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004010055A Withdrawn DE102004010055A1 (de) 2004-03-02 2004-03-02 Verfahren zur Herstellung von Silicium

Country Status (11)

Country Link
US (1) US7632478B2 (de)
EP (1) EP1720800B1 (de)
JP (1) JP4778504B2 (de)
KR (1) KR100981263B1 (de)
CN (1) CN100556804C (de)
BR (1) BRPI0508314A (de)
DE (2) DE102004010055A1 (de)
ES (1) ES2329590T3 (de)
RU (1) RU2368568C2 (de)
UA (1) UA91973C2 (de)
WO (1) WO2005085133A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004008442A1 (de) * 2004-02-19 2005-09-15 Degussa Ag Siliciumverbindungen für die Erzeugung von SIO2-haltigen Isolierschichten auf Chips
WO2005090234A1 (ja) * 2004-03-17 2005-09-29 Denki Kagaku Kogyo Kabushiki Kaisha シリコン粒子、シリコン粒子超格子及びこれらの製造方法
DE102005046105B3 (de) * 2005-09-27 2007-04-26 Degussa Gmbh Verfahren zur Herstellung von Monosilan
DE102006003464A1 (de) * 2006-01-25 2007-07-26 Degussa Gmbh Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
DE102007050199A1 (de) * 2007-10-20 2009-04-23 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus anorganischen Silanen
DE102008000052A1 (de) 2008-01-14 2009-07-16 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
CN103787336B (zh) 2008-09-16 2016-09-14 储晞 生产高纯颗粒硅的方法
IT1391068B1 (it) * 2008-10-20 2011-11-18 Sunlit S R L Metodo per la produzione di silicio policristallino
US8168123B2 (en) 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
JP2012523963A (ja) 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション ケイ化物がコーティングされた金属表面を有する反応器
WO2010123869A1 (en) 2009-04-20 2010-10-28 Ae Polysilicon Corporation Methods and system for cooling a reaction effluent gas
US8507051B2 (en) 2009-07-15 2013-08-13 Mitsubishi Materials Corporation Polycrystalline silicon producing method
JP5655429B2 (ja) 2009-08-28 2015-01-21 三菱マテリアル株式会社 多結晶シリコンの製造方法、製造装置及び多結晶シリコン
WO2011063007A2 (en) * 2009-11-18 2011-05-26 Rec Silicon Inc Fluid bed reactor
DE102010045040A1 (de) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Herstellen von Silizium
US20120148728A1 (en) * 2010-12-09 2012-06-14 Siliken Sa Methods and apparatus for the production of high purity silicon
EP2654912B1 (de) * 2010-12-20 2016-04-20 MEMC Electronic Materials, Inc. Herstellung von polykristallinem silicium mit einem im wesentlichen geschlossenen verfahren mit disproportionierungsschritten
US8226920B1 (en) 2011-01-07 2012-07-24 Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
DE102011004058A1 (de) 2011-02-14 2012-08-16 Evonik Degussa Gmbh Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
WO2018092448A1 (ja) * 2016-11-16 2018-05-24 株式会社Ihi クロロシランポリマーの安定化方法

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JPS5234668A (en) * 1975-09-11 1977-03-16 Kokusai Electric Co Ltd Gaseous phase growing process of semiconductor
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US4676967A (en) * 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4818495A (en) * 1982-11-05 1989-04-04 Union Carbide Corporation Reactor for fluidized bed silane decomposition
US4684513A (en) 1982-11-05 1987-08-04 Union Carbide Corporation Zone heating for fluidized bed silane pyrolysis
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
JPH0829929B2 (ja) * 1987-06-01 1996-03-27 三井東圧化学株式会社 ハロゲン化水素化シランの製造方法
US4906441A (en) * 1987-11-25 1990-03-06 Union Carbide Chemicals And Plastics Company Inc. Fluidized bed with heated liners and a method for its use
JP2562360B2 (ja) * 1987-12-14 1996-12-11 アドバンスド、シリコン、マテリアルズ、インコーポレイテッド 多結晶ケイ素製造用流動床
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
DE4127819A1 (de) * 1991-08-22 1993-02-25 Wacker Chemitronic Verfahren und vorrichtung zum periodischen abscheiden und aufschmelzen von silicium
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JPH06127924A (ja) * 1992-10-16 1994-05-10 Tonen Chem Corp 多結晶シリコンの製造方法
US6090360A (en) * 1995-02-15 2000-07-18 Dow Corning Corporation Method for recovering particulate silicon from a by-product stream
DE19654516C1 (de) 1996-12-27 1998-10-01 Degussa Verfahren zur Auftrennung des Produktgasgemisches der katalytischen Synthese von Methylmercaptan
JP2001064774A (ja) * 1999-08-27 2001-03-13 Tokuyama Corp シリコン系薄膜製造用原料
DE10034493C1 (de) 2000-07-15 2001-11-29 Degussa Verfahren zur Herstellung von Organosilylalkylpolysulfanen
DE10057481A1 (de) * 2000-11-20 2002-05-23 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium
DE10061682A1 (de) * 2000-12-11 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Reinstsilicium
DE60238399D1 (de) * 2001-06-06 2011-01-05 Tokuyama Corp Verfahren zur herstellung von silicium
DE10243022A1 (de) 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
DE10330022A1 (de) 2003-07-03 2005-01-20 Degussa Ag Verfahren zur Herstellung von Iow-k dielektrischen Filmen
DE10331952A1 (de) 2003-07-15 2005-02-10 Degussa Ag Vorrichtung und Verfahren zur diskontinuierlichen Polykondensation
DE102004008042A1 (de) 2004-02-19 2005-09-01 Goldschmidt Gmbh Verfahren zur Herstellung von Aminosäureestern und deren Säure-Additions-Salzen
DE102004038718A1 (de) 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium

Also Published As

Publication number Publication date
JP4778504B2 (ja) 2011-09-21
KR100981263B1 (ko) 2010-09-10
CN100556804C (zh) 2009-11-04
EP1720800B1 (de) 2009-07-22
RU2006134502A (ru) 2008-04-10
RU2368568C2 (ru) 2009-09-27
EP1720800A1 (de) 2006-11-15
BRPI0508314A (pt) 2007-07-24
WO2005085133A1 (en) 2005-09-15
JP2007526203A (ja) 2007-09-13
US7632478B2 (en) 2009-12-15
UA91973C2 (ru) 2010-09-27
DE102004010055A1 (de) 2005-09-22
KR20070001165A (ko) 2007-01-03
US20070148075A1 (en) 2007-06-28
CN1926061A (zh) 2007-03-07
ES2329590T3 (es) 2009-11-27

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