CN100556804C - 硅的生产方法 - Google Patents
硅的生产方法 Download PDFInfo
- Publication number
- CN100556804C CN100556804C CNB2005800063620A CN200580006362A CN100556804C CN 100556804 C CN100556804 C CN 100556804C CN B2005800063620 A CNB2005800063620 A CN B2005800063620A CN 200580006362 A CN200580006362 A CN 200580006362A CN 100556804 C CN100556804 C CN 100556804C
- Authority
- CN
- China
- Prior art keywords
- silane
- silicomethane
- silicon
- mixture
- chlorosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
材料 | 甲硅烷 | 一氯硅烷 | 二氯硅烷 | 三氯硅烷 |
临界温度[℃] | -3.5 | 123 | 176 | 206 |
大气压下的沸点[℃] | -112 | -30 | 8.3 | 31.8 |
5bar下的沸点[℃] | -78 | 15 | 60 | 87 |
25bar下的沸点[℃] | -28 | 85 | 137 | 170 |
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004010055.1 | 2004-03-02 | ||
DE102004010055A DE102004010055A1 (de) | 2004-03-02 | 2004-03-02 | Verfahren zur Herstellung von Silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1926061A CN1926061A (zh) | 2007-03-07 |
CN100556804C true CN100556804C (zh) | 2009-11-04 |
Family
ID=34877232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800063620A Expired - Fee Related CN100556804C (zh) | 2004-03-02 | 2005-01-06 | 硅的生产方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US7632478B2 (zh) |
EP (1) | EP1720800B1 (zh) |
JP (1) | JP4778504B2 (zh) |
KR (1) | KR100981263B1 (zh) |
CN (1) | CN100556804C (zh) |
BR (1) | BRPI0508314A (zh) |
DE (2) | DE102004010055A1 (zh) |
ES (1) | ES2329590T3 (zh) |
RU (1) | RU2368568C2 (zh) |
UA (1) | UA91973C2 (zh) |
WO (1) | WO2005085133A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004008442A1 (de) * | 2004-02-19 | 2005-09-15 | Degussa Ag | Siliciumverbindungen für die Erzeugung von SIO2-haltigen Isolierschichten auf Chips |
WO2005090234A1 (ja) * | 2004-03-17 | 2005-09-29 | Denki Kagaku Kogyo Kabushiki Kaisha | シリコン粒子、シリコン粒子超格子及びこれらの製造方法 |
DE102005046105B3 (de) * | 2005-09-27 | 2007-04-26 | Degussa Gmbh | Verfahren zur Herstellung von Monosilan |
DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
DE102007050199A1 (de) * | 2007-10-20 | 2009-04-23 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus anorganischen Silanen |
DE102008000052A1 (de) | 2008-01-14 | 2009-07-16 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
CN103787336B (zh) | 2008-09-16 | 2016-09-14 | 储晞 | 生产高纯颗粒硅的方法 |
IT1391068B1 (it) * | 2008-10-20 | 2011-11-18 | Sunlit S R L | Metodo per la produzione di silicio policristallino |
US8168123B2 (en) | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
JP2012523963A (ja) | 2009-04-20 | 2012-10-11 | エーイー ポリシリコン コーポレーション | ケイ化物がコーティングされた金属表面を有する反応器 |
WO2010123869A1 (en) | 2009-04-20 | 2010-10-28 | Ae Polysilicon Corporation | Methods and system for cooling a reaction effluent gas |
US8507051B2 (en) | 2009-07-15 | 2013-08-13 | Mitsubishi Materials Corporation | Polycrystalline silicon producing method |
JP5655429B2 (ja) | 2009-08-28 | 2015-01-21 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法、製造装置及び多結晶シリコン |
WO2011063007A2 (en) * | 2009-11-18 | 2011-05-26 | Rec Silicon Inc | Fluid bed reactor |
DE102010045040A1 (de) * | 2010-09-10 | 2012-03-15 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zum Herstellen von Silizium |
US20120148728A1 (en) * | 2010-12-09 | 2012-06-14 | Siliken Sa | Methods and apparatus for the production of high purity silicon |
EP2654912B1 (en) * | 2010-12-20 | 2016-04-20 | MEMC Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations |
US8226920B1 (en) | 2011-01-07 | 2012-07-24 | Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) | Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas |
DE102011004058A1 (de) | 2011-02-14 | 2012-08-16 | Evonik Degussa Gmbh | Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung |
KR101427726B1 (ko) * | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
WO2018092448A1 (ja) * | 2016-11-16 | 2018-05-24 | 株式会社Ihi | クロロシランポリマーの安定化方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5234668A (en) * | 1975-09-11 | 1977-03-16 | Kokusai Electric Co Ltd | Gaseous phase growing process of semiconductor |
DE2638270C2 (de) * | 1976-08-25 | 1983-01-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium |
US4102764A (en) * | 1976-12-29 | 1978-07-25 | Westinghouse Electric Corp. | High purity silicon production by arc heater reduction of silicon intermediates |
US4676967A (en) * | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
US4818495A (en) * | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
US4684513A (en) | 1982-11-05 | 1987-08-04 | Union Carbide Corporation | Zone heating for fluidized bed silane pyrolysis |
US4559219A (en) * | 1984-04-02 | 1985-12-17 | General Electric Company | Reducing powder formation in the production of high-purity silicon |
JPH0829929B2 (ja) * | 1987-06-01 | 1996-03-27 | 三井東圧化学株式会社 | ハロゲン化水素化シランの製造方法 |
US4906441A (en) * | 1987-11-25 | 1990-03-06 | Union Carbide Chemicals And Plastics Company Inc. | Fluidized bed with heated liners and a method for its use |
JP2562360B2 (ja) * | 1987-12-14 | 1996-12-11 | アドバンスド、シリコン、マテリアルズ、インコーポレイテッド | 多結晶ケイ素製造用流動床 |
US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
DE4127819A1 (de) * | 1991-08-22 | 1993-02-25 | Wacker Chemitronic | Verfahren und vorrichtung zum periodischen abscheiden und aufschmelzen von silicium |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
JPH06127924A (ja) * | 1992-10-16 | 1994-05-10 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
US6090360A (en) * | 1995-02-15 | 2000-07-18 | Dow Corning Corporation | Method for recovering particulate silicon from a by-product stream |
DE19654516C1 (de) | 1996-12-27 | 1998-10-01 | Degussa | Verfahren zur Auftrennung des Produktgasgemisches der katalytischen Synthese von Methylmercaptan |
JP2001064774A (ja) * | 1999-08-27 | 2001-03-13 | Tokuyama Corp | シリコン系薄膜製造用原料 |
DE10034493C1 (de) | 2000-07-15 | 2001-11-29 | Degussa | Verfahren zur Herstellung von Organosilylalkylpolysulfanen |
DE10057481A1 (de) * | 2000-11-20 | 2002-05-23 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
DE10061682A1 (de) * | 2000-12-11 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von Reinstsilicium |
DE60238399D1 (de) * | 2001-06-06 | 2011-01-05 | Tokuyama Corp | Verfahren zur herstellung von silicium |
DE10243022A1 (de) | 2002-09-17 | 2004-03-25 | Degussa Ag | Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor |
DE10330022A1 (de) | 2003-07-03 | 2005-01-20 | Degussa Ag | Verfahren zur Herstellung von Iow-k dielektrischen Filmen |
DE10331952A1 (de) | 2003-07-15 | 2005-02-10 | Degussa Ag | Vorrichtung und Verfahren zur diskontinuierlichen Polykondensation |
DE102004008042A1 (de) | 2004-02-19 | 2005-09-01 | Goldschmidt Gmbh | Verfahren zur Herstellung von Aminosäureestern und deren Säure-Additions-Salzen |
DE102004038718A1 (de) | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Reaktor sowie Verfahren zur Herstellung von Silizium |
-
2004
- 2004-03-02 DE DE102004010055A patent/DE102004010055A1/de not_active Withdrawn
-
2005
- 2005-01-06 ES ES05707743T patent/ES2329590T3/es active Active
- 2005-01-06 WO PCT/EP2005/050043 patent/WO2005085133A1/en active Application Filing
- 2005-01-06 KR KR1020067017820A patent/KR100981263B1/ko not_active IP Right Cessation
- 2005-01-06 UA UAA200609903A patent/UA91973C2/ru unknown
- 2005-01-06 EP EP05707743A patent/EP1720800B1/en not_active Not-in-force
- 2005-01-06 US US10/587,399 patent/US7632478B2/en not_active Expired - Fee Related
- 2005-01-06 CN CNB2005800063620A patent/CN100556804C/zh not_active Expired - Fee Related
- 2005-01-06 RU RU2006134502/15A patent/RU2368568C2/ru not_active IP Right Cessation
- 2005-01-06 DE DE602005015554T patent/DE602005015554D1/de active Active
- 2005-01-06 BR BRPI0508314-1A patent/BRPI0508314A/pt not_active IP Right Cessation
- 2005-01-06 JP JP2007501254A patent/JP4778504B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE602005015554D1 (de) | 2009-09-03 |
JP4778504B2 (ja) | 2011-09-21 |
KR100981263B1 (ko) | 2010-09-10 |
EP1720800B1 (en) | 2009-07-22 |
RU2006134502A (ru) | 2008-04-10 |
RU2368568C2 (ru) | 2009-09-27 |
EP1720800A1 (en) | 2006-11-15 |
BRPI0508314A (pt) | 2007-07-24 |
WO2005085133A1 (en) | 2005-09-15 |
JP2007526203A (ja) | 2007-09-13 |
US7632478B2 (en) | 2009-12-15 |
UA91973C2 (ru) | 2010-09-27 |
DE102004010055A1 (de) | 2005-09-22 |
KR20070001165A (ko) | 2007-01-03 |
US20070148075A1 (en) | 2007-06-28 |
CN1926061A (zh) | 2007-03-07 |
ES2329590T3 (es) | 2009-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: EVONIK DEGUSSA CO., LTD. Free format text: FORMER NAME: DEGUSSA CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Dusseldorf Patentee after: DEGUSSA GmbH Address before: Dusseldorf Patentee before: Degussa AG |
|
CP03 | Change of name, title or address |
Address after: essen Patentee after: EVONIK DEGUSSA GmbH Address before: Dusseldorf Patentee before: Degussa GmbH |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091104 Termination date: 20160106 |
|
CF01 | Termination of patent right due to non-payment of annual fee |