DE602007011843D1 - Verfahren zur Herstellung von Gruppe-III-Nitridkristallen - Google Patents
Verfahren zur Herstellung von Gruppe-III-NitridkristallenInfo
- Publication number
- DE602007011843D1 DE602007011843D1 DE602007011843T DE602007011843T DE602007011843D1 DE 602007011843 D1 DE602007011843 D1 DE 602007011843D1 DE 602007011843 T DE602007011843 T DE 602007011843T DE 602007011843 T DE602007011843 T DE 602007011843T DE 602007011843 D1 DE602007011843 D1 DE 602007011843D1
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- group iii
- iii nitride
- nitride crystals
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006076584A JP4647525B2 (ja) | 2006-03-20 | 2006-03-20 | Iii族窒化物結晶の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007011843D1 true DE602007011843D1 (de) | 2011-02-24 |
Family
ID=38002093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007011843T Active DE602007011843D1 (de) | 2006-03-20 | 2007-03-15 | Verfahren zur Herstellung von Gruppe-III-Nitridkristallen |
Country Status (4)
Country | Link |
---|---|
US (2) | US7833346B2 (de) |
EP (2) | EP2278049B1 (de) |
JP (1) | JP4647525B2 (de) |
DE (1) | DE602007011843D1 (de) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8101020B2 (en) * | 2005-10-14 | 2012-01-24 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
JP4856934B2 (ja) * | 2005-11-21 | 2012-01-18 | 株式会社リコー | GaN結晶 |
JP4647525B2 (ja) * | 2006-03-20 | 2011-03-09 | 日本碍子株式会社 | Iii族窒化物結晶の製造方法 |
JP4939360B2 (ja) * | 2007-10-05 | 2012-05-23 | 住友電気工業株式会社 | Iii族窒化物結晶の成長方法 |
JP4941448B2 (ja) | 2007-10-26 | 2012-05-30 | 豊田合成株式会社 | Iii族窒化物半導体製造装置 |
US8916124B2 (en) * | 2007-12-05 | 2014-12-23 | Ricoh Company, Ltd. | Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same |
WO2009081687A1 (ja) * | 2007-12-21 | 2009-07-02 | Ngk Insulators, Ltd. | 窒化物単結晶の育成装置 |
JP5303941B2 (ja) * | 2008-01-31 | 2013-10-02 | 住友電気工業株式会社 | AlxGa1−xN単結晶の成長方法 |
JP5276852B2 (ja) | 2008-02-08 | 2013-08-28 | 昭和電工株式会社 | Iii族窒化物半導体エピタキシャル基板の製造方法 |
WO2009120986A2 (en) * | 2008-03-27 | 2009-10-01 | Nitek, Inc. | Mixed source growth apparatus and method of fabricating iii-nitride ultraviolet emitters |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
JP5361884B2 (ja) * | 2008-06-26 | 2013-12-04 | 日本碍子株式会社 | 窒化物単結晶の育成方法 |
US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
JP5003642B2 (ja) * | 2008-09-30 | 2012-08-15 | 豊田合成株式会社 | Iii族窒化物半導体結晶の製造装置 |
JP5012750B2 (ja) * | 2008-09-30 | 2012-08-29 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8461071B2 (en) | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
JP5607548B2 (ja) | 2009-01-21 | 2014-10-15 | 日本碍子株式会社 | 3b族窒化物結晶板製造装置 |
JP5200972B2 (ja) * | 2009-02-04 | 2013-06-05 | 株式会社Ihi | 基板製造装置 |
JP5200973B2 (ja) * | 2009-02-04 | 2013-06-05 | 株式会社Ihi | 基板ホルダ |
JP2010232464A (ja) * | 2009-03-27 | 2010-10-14 | Showa Denko Kk | Iii族窒化物半導体発光素子及びその製造方法、並びにレーザダイオード |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
JP5741085B2 (ja) * | 2010-03-17 | 2015-07-01 | 株式会社リコー | 窒化物結晶製造方法および窒化物結晶製造装置 |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8975165B2 (en) | 2011-02-17 | 2015-03-10 | Soitec | III-V semiconductor structures with diminished pit defects and methods for forming the same |
US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
JP5943921B2 (ja) * | 2011-08-10 | 2016-07-05 | 日本碍子株式会社 | 13族元素窒化物膜の剥離方法 |
US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
JP6208416B2 (ja) * | 2012-09-10 | 2017-10-04 | 豊田合成株式会社 | GaN半導体単結晶の製造方法 |
US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
JP6175817B2 (ja) * | 2013-03-13 | 2017-08-09 | 株式会社リコー | 13族窒化物結晶の製造方法、及び製造装置 |
US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
CN104878451B (zh) * | 2015-06-16 | 2017-07-28 | 北京大学东莞光电研究院 | 一种氮化物单晶生长装置 |
CN105256372B (zh) * | 2015-11-27 | 2018-09-07 | 北京大学东莞光电研究院 | 一种GaN单晶装置 |
US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
JP6631813B2 (ja) * | 2017-07-21 | 2020-01-15 | 株式会社フェニックス・テクノ | GaN単結晶成長方法及びGaN単結晶成長装置 |
CN108301047A (zh) * | 2018-01-11 | 2018-07-20 | 东莞理工学院 | 一种内腔调控钠流法材料生长反应釜 |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
EP4104201A1 (de) | 2020-02-11 | 2022-12-21 | SLT Technologies, Inc. | Verbessertes gruppe-iii-nitrid-substrat, verfahren zu seiner herstellung und verwendungsverfahren |
US12091771B2 (en) | 2020-02-11 | 2024-09-17 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3214069B2 (ja) * | 1992-06-03 | 2001-10-02 | 株式会社村田製作所 | 液相エピタキシャル成長装置 |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US5868837A (en) * | 1997-01-17 | 1999-02-09 | Cornell Research Foundation, Inc. | Low temperature method of preparing GaN single crystals |
JP3413811B2 (ja) * | 1998-04-14 | 2003-06-09 | 日本電信電話株式会社 | 半導体素子およびiii族窒化物超格子構造の作製方法 |
JP3788037B2 (ja) | 1998-06-18 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板 |
TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
WO1999066565A1 (en) * | 1998-06-18 | 1999-12-23 | University Of Florida | Method and apparatus for producing group-iii nitrides |
JP3957918B2 (ja) | 1999-05-17 | 2007-08-15 | 独立行政法人科学技術振興機構 | 窒化ガリウム単結晶の育成方法 |
US6592663B1 (en) * | 1999-06-09 | 2003-07-15 | Ricoh Company Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
JP4145437B2 (ja) | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶GaN基板の製造方法 |
JP2002074301A (ja) * | 2000-08-31 | 2002-03-15 | Shinko Electric Ind Co Ltd | 非接触型icカード用アンテナ、非接触型icカード用アンテナフレーム、及び非接触型icカード |
US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
FR2840731B3 (fr) * | 2002-06-11 | 2004-07-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees |
KR100831751B1 (ko) * | 2000-11-30 | 2008-05-23 | 노쓰 캐롤라이나 스테이트 유니버시티 | M'n 물의 제조 방법 및 장치 |
JP2002203799A (ja) * | 2000-12-28 | 2002-07-19 | Canon Inc | 液相成長方法および液相成長装置 |
JP3631724B2 (ja) | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US6824609B2 (en) * | 2001-08-28 | 2004-11-30 | Canon Kabushiki Kaisha | Liquid phase growth method and liquid phase growth apparatus |
US7097707B2 (en) * | 2001-12-31 | 2006-08-29 | Cree, Inc. | GaN boule grown from liquid melt using GaN seed wafers |
JP2003292395A (ja) * | 2002-03-29 | 2003-10-15 | Canon Inc | 液相成長装置および液相成長方法 |
JP4053336B2 (ja) | 2002-04-08 | 2008-02-27 | 株式会社リコー | Iii族窒化物結晶製造方法およびiii族窒化物結晶製造装置 |
AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
JP4133139B2 (ja) | 2002-09-09 | 2008-08-13 | 株式会社リコー | 光ピックアップ |
JP4597534B2 (ja) * | 2003-01-20 | 2010-12-15 | パナソニック株式会社 | Iii族窒化物基板の製造方法 |
JP4645034B2 (ja) * | 2003-02-06 | 2011-03-09 | 株式会社豊田中央研究所 | Iii族窒化物半導体を有する半導体素子 |
JP4588340B2 (ja) * | 2003-03-20 | 2010-12-01 | パナソニック株式会社 | Iii族窒化物基板の製造方法 |
JP2004300024A (ja) * | 2003-03-20 | 2004-10-28 | Matsushita Electric Ind Co Ltd | Iii族元素窒化物結晶の製造方法、それにより得られたiii族元素窒化物結晶およびそれを用いた半導体装置 |
US7176115B2 (en) * | 2003-03-20 | 2007-02-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing Group III nitride substrate and semiconductor device |
JP4323845B2 (ja) | 2003-03-28 | 2009-09-02 | 住友電気工業株式会社 | Iii−v族化合物結晶の製造方法 |
US7309534B2 (en) * | 2003-05-29 | 2007-12-18 | Matsushita Electric Industrial Co., Ltd. | Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same |
JP2005187317A (ja) | 2003-12-03 | 2005-07-14 | Ngk Insulators Ltd | 単結晶の製造方法、単結晶および複合体 |
US7435295B2 (en) * | 2004-02-19 | 2008-10-14 | Matsushita Electric Industrial Co., Ltd. | Method for producing compound single crystal and production apparatus for use therein |
JP2005263622A (ja) * | 2004-02-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 化合物単結晶の製造方法、およびそれに用いる製造装置 |
JP4647525B2 (ja) * | 2006-03-20 | 2011-03-09 | 日本碍子株式会社 | Iii族窒化物結晶の製造方法 |
-
2006
- 2006-03-20 JP JP2006076584A patent/JP4647525B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-14 US US11/685,933 patent/US7833346B2/en not_active Expired - Fee Related
- 2007-03-15 EP EP10177945.2A patent/EP2278049B1/de not_active Expired - Fee Related
- 2007-03-15 DE DE602007011843T patent/DE602007011843D1/de active Active
- 2007-03-15 EP EP07251098A patent/EP1837422B1/de not_active Ceased
-
2010
- 2010-09-24 US US12/889,539 patent/US20110011333A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070215033A1 (en) | 2007-09-20 |
JP4647525B2 (ja) | 2011-03-09 |
EP2278049A1 (de) | 2011-01-26 |
JP2007254161A (ja) | 2007-10-04 |
EP1837422B1 (de) | 2011-01-12 |
EP1837422A3 (de) | 2007-12-12 |
EP2278049B1 (de) | 2014-01-01 |
US7833346B2 (en) | 2010-11-16 |
EP1837422A2 (de) | 2007-09-26 |
US20110011333A1 (en) | 2011-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602007011843D1 (de) | Verfahren zur Herstellung von Gruppe-III-Nitridkristallen | |
DE602005009866D1 (de) | Verfahren zur herstellung von n-phenylpyrazol-1-carboxamiden | |
DE602005018601D1 (de) | Verfahren zur herstellung von 2-aminothiazol-5-aro | |
DE502005002059D1 (de) | Verfahren zur herstellung von polyetheralkoholen | |
DE502006008840D1 (de) | Verfahren zur Herstellung von Isocyanaten | |
DE502006000138D1 (de) | Verfahren zur Herstellung von Triorganosiloxygruppen aufweisenden Organopolysiloxanen | |
DE502006006498D1 (de) | Verfahren zur Herstellung von Organopolysiloxanen | |
DE602006010302D1 (de) | Verfahren zur Herstellung von 5-methyl-2-furfural | |
DE502006001614D1 (de) | Verfahren zur herstellung von 1-alkyl-3-phenyluracilen | |
DE502006004698D1 (de) | Verfahren zur Herstellung von sublithographischen Strukturen | |
DE602005007734D1 (de) | Verfahren zur herstellung von telmisartan | |
DE602005027169D1 (de) | Verfahren zur Herstellung von Bornitrid | |
DE502007003700D1 (de) | Verfahren zur Herstellung von Glycerin | |
DE602007009096D1 (de) | Verfahren zur herstellung von benzopyran-2-olderivaten | |
DE502006000036D1 (de) | Kontinuierliches Verfahren zur Herstellung SiOC-enthaltender Verbindungen | |
DE602006009562D1 (de) | Verfahren zur herstellung von ferrisuccinylcasein | |
DE112007001239T8 (de) | Verfahren zur Herstellung von Silicium | |
DE602005017099D1 (de) | Verfahren zur Herstellung von amorphem Cefuroximaxetil | |
DE602006008306D1 (de) | Verfahren zur herstellung von l-threonin | |
DE602006018699D1 (de) | Verfahren zur Herstellung von Fluorhalogenethern | |
DE502006004187D1 (de) | Verfahren zur herstellung von diorganopolysiloxanen | |
DE502007000129D1 (de) | Kontinuierliches Verfahren zur Herstellung von vernetzbaren Organopolysiloxanmassen | |
DE602005024566D1 (de) | Verfahren zur herstellung von 2-amino-5-iodobenzoesäure | |
ATA8002004A (de) | Verfahren zur herstellung von 2-butanol | |
DE112006000985A5 (de) | Verfahren zur Herstellung von Tetrahydropyranen aus Tetrahydropyran-3-onen |