JP4856934B2 - GaN結晶 - Google Patents
GaN結晶 Download PDFInfo
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- JP4856934B2 JP4856934B2 JP2005335684A JP2005335684A JP4856934B2 JP 4856934 B2 JP4856934 B2 JP 4856934B2 JP 2005335684 A JP2005335684 A JP 2005335684A JP 2005335684 A JP2005335684 A JP 2005335684A JP 4856934 B2 JP4856934 B2 JP 4856934B2
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- 239000013078 crystal Substances 0.000 title claims description 342
- 239000012535 impurity Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 245
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 231
- 229910052751 metal Inorganic materials 0.000 description 230
- 239000002184 metal Substances 0.000 description 230
- 229910002601 GaN Inorganic materials 0.000 description 228
- 239000002585 base Substances 0.000 description 115
- 239000011734 sodium Substances 0.000 description 93
- 230000001629 suppression Effects 0.000 description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 71
- 229910001873 dinitrogen Inorganic materials 0.000 description 61
- 239000007789 gas Substances 0.000 description 49
- 239000000758 substrate Substances 0.000 description 42
- 238000001514 detection method Methods 0.000 description 37
- 239000007788 liquid Substances 0.000 description 35
- 229910052594 sapphire Inorganic materials 0.000 description 27
- 239000010980 sapphire Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 26
- 150000004767 nitrides Chemical class 0.000 description 26
- 238000010438 heat treatment Methods 0.000 description 22
- 230000007246 mechanism Effects 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 230000005484 gravity Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 239000012298 atmosphere Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 10
- 150000001340 alkali metals Chemical class 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 108091058543 REG3 Proteins 0.000 description 7
- 102100027336 Regenerating islet-derived protein 3-alpha Human genes 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 108700012361 REG2 Proteins 0.000 description 5
- 101150108637 REG2 gene Proteins 0.000 description 5
- 101100120298 Rattus norvegicus Flot1 gene Proteins 0.000 description 5
- 101100412403 Rattus norvegicus Reg3b gene Proteins 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 238000002109 crystal growth method Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 102100023882 Endoribonuclease ZC3H12A Human genes 0.000 description 1
- 101710112715 Endoribonuclease ZC3H12A Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- QGVYYLZOAMMKAH-UHFFFAOYSA-N pegnivacogin Chemical compound COCCOC(=O)NCCCCC(NC(=O)OCCOC)C(=O)NCCCCCCOP(=O)(O)O QGVYYLZOAMMKAH-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- -1 potassium (K) Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
図1は、この発明の実施の形態1における結晶成長装置の概略断面図である。図1を参照して、この発明の実施の形態1における結晶成長装置100は、反応容器10と、外部反応容器20と、配管30,40と、抑制/導入栓50と、加熱装置60,70,80と、ガス供給管90,110と、バルブ120,121,160と、圧力調整器130と、ガスボンベ140と、排気管150と、真空ポンプ170と、圧力センサー180と、金属融液190とを備える。
図15は、実施の形態2における結晶成長装置の概略断面図である。図15を参照して、実施の形態2における結晶成長装置100Aは、図1に示す結晶成長装置100にベローズ200、支持装置210、上下機構220、振動印加装置230および振動検出装置240を追加したものであり、その他は、結晶成長装置100と同じである。
図23は、実施の形態3における結晶成長装置の概略断面図である。図23を参照して、実施の形態3における結晶成長装置100Bは、図1に示す結晶成長装置100の配管40および加熱装置80を削除したものであり、その他は、結晶成長装置100と同じである。
Claims (1)
- 表面が平坦であってc軸方向に延びており、かつ、不純物であるLiが10 15 〜10 21 cm -3 含まれるGaN結晶を含んだドメインを複数有しており、隣接する前記ドメイン間に貫通転位が形成されているGaN結晶。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005335684A JP4856934B2 (ja) | 2005-11-21 | 2005-11-21 | GaN結晶 |
US11/561,662 US8323404B2 (en) | 2005-11-21 | 2006-11-20 | Group III nitride crystal and manufacturing method thereof |
US13/647,194 US9365948B2 (en) | 2005-11-21 | 2012-10-08 | Group III nitride crystal and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005335684A JP4856934B2 (ja) | 2005-11-21 | 2005-11-21 | GaN結晶 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010278366A Division JP5365616B2 (ja) | 2010-12-14 | 2010-12-14 | Iii族窒化物結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007137735A JP2007137735A (ja) | 2007-06-07 |
JP4856934B2 true JP4856934B2 (ja) | 2012-01-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005335684A Expired - Fee Related JP4856934B2 (ja) | 2005-11-21 | 2005-11-21 | GaN結晶 |
Country Status (2)
Country | Link |
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US (2) | US8323404B2 (ja) |
JP (1) | JP4856934B2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8101020B2 (en) * | 2005-10-14 | 2012-01-24 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
JP4856934B2 (ja) | 2005-11-21 | 2012-01-18 | 株式会社リコー | GaN結晶 |
JP5129527B2 (ja) | 2006-10-02 | 2013-01-30 | 株式会社リコー | 結晶製造方法及び基板製造方法 |
JP4932545B2 (ja) * | 2007-03-06 | 2012-05-16 | 株式会社リコー | 電子写真感光体およびそれを用いた画像形成方法、画像形成装置並びに画像形成用プロセスカートリッジ |
US7718002B2 (en) * | 2007-03-07 | 2010-05-18 | Ricoh Company, Ltd. | Crystal manufacturing apparatus |
JP5451651B2 (ja) | 2009-02-16 | 2014-03-26 | 日本碍子株式会社 | 13族窒化物の結晶成長方法及び13族窒化物結晶 |
JP5418402B2 (ja) * | 2010-05-20 | 2014-02-19 | 株式会社Ihi | 窒化ガリウム結晶製造装置のガリウム供給管閉塞防止方法及び装置 |
JP2012012259A (ja) | 2010-07-01 | 2012-01-19 | Ricoh Co Ltd | 窒化物結晶およびその製造方法 |
JP5729182B2 (ja) | 2010-08-31 | 2015-06-03 | 株式会社リコー | n型III族窒化物単結晶の製造方法、n型III族窒化物単結晶および結晶基板 |
JP5953683B2 (ja) | 2011-09-14 | 2016-07-20 | 株式会社リコー | 13族窒化物結晶、及び13族窒化物結晶基板 |
JP5842490B2 (ja) | 2011-09-14 | 2016-01-13 | 株式会社リコー | 13族窒化物結晶、及び13族窒化物結晶基板 |
JP5953684B2 (ja) * | 2011-09-14 | 2016-07-20 | 株式会社リコー | 13族窒化物結晶の製造方法 |
JP6098028B2 (ja) | 2011-09-14 | 2017-03-22 | 株式会社リコー | 窒化ガリウム結晶、13族窒化物結晶、13族窒化物結晶基板および製造方法 |
JP6307818B2 (ja) * | 2013-09-09 | 2018-04-11 | 株式会社リコー | 13族窒化物結晶の製造方法 |
JP6398213B2 (ja) * | 2014-02-13 | 2018-10-03 | 株式会社リコー | 13族窒化物結晶の製造方法 |
JP6337526B2 (ja) * | 2014-03-10 | 2018-06-06 | 株式会社リコー | 13族窒化物結晶の製造方法 |
JP6390157B2 (ja) * | 2014-05-12 | 2018-09-19 | 株式会社リコー | 13族窒化物結晶の製造方法 |
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US6592663B1 (en) * | 1999-06-09 | 2003-07-15 | Ricoh Company Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
JP4094780B2 (ja) | 1999-08-24 | 2008-06-04 | 株式会社リコー | 結晶成長方法および結晶成長装置並びにiii族窒化物結晶の製造方法および結晶製造装置 |
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