JP2004200653A - 基板の粘着表面の形成方法及び形成装置 - Google Patents
基板の粘着表面の形成方法及び形成装置 Download PDFInfo
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- JP2004200653A JP2004200653A JP2003353888A JP2003353888A JP2004200653A JP 2004200653 A JP2004200653 A JP 2004200653A JP 2003353888 A JP2003353888 A JP 2003353888A JP 2003353888 A JP2003353888 A JP 2003353888A JP 2004200653 A JP2004200653 A JP 2004200653A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 239000000853 adhesive Substances 0.000 title claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000003631 wet chemical etching Methods 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 13
- 238000003486 chemical etching Methods 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 10
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 229920006395 saturated elastomer Polymers 0.000 description 6
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 6
- 229910008051 Si-OH Inorganic materials 0.000 description 5
- 229910006358 Si—OH Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 siloxane compounds Chemical class 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】 上記目的は、上記のタイプの方法及び装置によって達成される。ここで上記方法は、ウェットケミカルエッチングの後続けてオゾンガスの雰囲気に表面を露出することを含み、また、装置の雰囲気がオゾンガスの雰囲気である。
【選択図】 図1
Description
Claims (9)
- 他の基板の表面との結合が可能である基板、特にシリコンウェーハ(7)の粘着表面を形成する方法であり、前記表面が、当該表面から酸化物(12)を除去するために、エッチング液(6)を用いたウェットケミカルエッチングによって処理される、前記方法において、
ウェットケミカルエッチングをした後、続けて、前記表面をオゾンガスの雰囲気(16)に露出することを特徴とする方法。 - 前記エッチング液(6)は、フッ化水素酸水溶液(HF)から成ることを特徴とする請求項1に記載の方法。
- 前記エッチング液(6)は、フッ化水素(HF)、フッ化アンモニウム(NH4F)及び水の成分を含むことを特徴とする請求項1に記載の方法。
- ケミカルエッチングをする時間が、約5秒〜約30分の範囲にあることを特徴とする請求項1〜3のいずれか一項に記載の方法。
- ウェットケミカルエッチングの温度が、約19℃〜約25℃の室温から約80℃までの範囲にあることを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 前記基板を溶液槽(5)でエッチングし、当該基板を溶液槽から取り出す時、当該基板をオゾンガスの雰囲気(16)を含んだ室(9)に直接、搬入することを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 他の基板の表面との結合が可能である基板、特にシリコンウェーハ(7)の粘着表面を形成する装置(1)であり、前記表面から酸化物(12)を除去するためのエッチング液(6)が入れられた溶液槽(5)を有し、前記溶液槽がガスの雰囲気を有する室(9)に隣接している、前記装置であって、
前記室の中の前記雰囲気は、オゾンガスの雰囲気(16)であることを特徴とする装置。 - 前記室(9)を、密閉された設備(2)の中に備えることを特徴とする請求項7に記載の装置。
- 前記設備(2)を、オゾン発生器(11)と連結することを特徴とする請求項8に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02292517A EP1408534B1 (en) | 2002-10-11 | 2002-10-11 | A method and a device for producing an adhesive surface of a substrate |
US46592303P | 2003-04-24 | 2003-04-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004200653A true JP2004200653A (ja) | 2004-07-15 |
Family
ID=32773620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003353888A Pending JP2004200653A (ja) | 2002-10-11 | 2003-10-14 | 基板の粘着表面の形成方法及び形成装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040069321A1 (ja) |
EP (1) | EP1408534B1 (ja) |
JP (1) | JP2004200653A (ja) |
AT (1) | ATE353475T1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8920391B2 (en) * | 2004-06-18 | 2014-12-30 | Sunless, Inc. | Container for system for spray coating human subject |
US20100129557A1 (en) * | 2004-06-18 | 2010-05-27 | Mt Industries, Inc. | Spray coating at least one portion of a subject |
US20070197982A1 (en) * | 2006-01-05 | 2007-08-23 | Scott Thomason | Automatic body spray system |
US20050279865A1 (en) * | 2004-06-18 | 2005-12-22 | Innovative Developments, Llc | Fluid spraying system |
JP5317529B2 (ja) * | 2008-05-02 | 2013-10-16 | Sumco Techxiv株式会社 | 半導体ウェーハの処理方法及び処理装置 |
WO2010020092A1 (en) * | 2008-08-20 | 2010-02-25 | Acm Research (Shanghai) Inc. | Barrier layer removal method and apparatus |
DE102008061521B4 (de) * | 2008-12-10 | 2011-12-08 | Siltronic Ag | Verfahren zur Behandlung einer Halbleiterscheibe |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
EP2390925A1 (en) * | 2010-05-31 | 2011-11-30 | Applied Materials, Inc. | Thin film solar fabrication process, etching method, device for etching, and thin film solar device |
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US5158100A (en) * | 1989-05-06 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefor |
JP2581268B2 (ja) * | 1990-05-22 | 1997-02-12 | 日本電気株式会社 | 半導体基板の処理方法 |
JPH0719739B2 (ja) * | 1990-09-10 | 1995-03-06 | 信越半導体株式会社 | 接合ウェーハの製造方法 |
US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
US5634978A (en) * | 1994-11-14 | 1997-06-03 | Yieldup International | Ultra-low particle semiconductor method |
JPH08264500A (ja) * | 1995-03-27 | 1996-10-11 | Sony Corp | 基板の洗浄方法 |
US5714203A (en) * | 1995-08-23 | 1998-02-03 | Ictop Entwicklungs Gmbh | Procedure for the drying of silicon |
JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
US6058945A (en) * | 1996-05-28 | 2000-05-09 | Canon Kabushiki Kaisha | Cleaning methods of porous surface and semiconductor surface |
JPH10144650A (ja) * | 1996-11-11 | 1998-05-29 | Mitsubishi Electric Corp | 半導体材料の洗浄装置 |
US6027602A (en) * | 1997-08-29 | 2000-02-22 | Techpoint Pacific Singapore Pte. Ltd. | Wet processing apparatus |
US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
US20020066464A1 (en) * | 1997-05-09 | 2002-06-06 | Semitool, Inc. | Processing a workpiece using ozone and sonic energy |
US20020157686A1 (en) * | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
EP0989962A4 (en) * | 1997-06-13 | 2005-03-09 | Mattson Technology Ip Inc | PROCESSES FOR PROCESSING SEMICONDUCTOR WAFERS |
US6423613B1 (en) * | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
DE19853486A1 (de) * | 1998-11-19 | 2000-05-31 | Wacker Siltronic Halbleitermat | Verfahren zur naßchemischen Behandlung von Halbleiterscheiben |
US6240939B1 (en) * | 1999-03-22 | 2001-06-05 | Mcgee Charles P. | Windbreak |
JP2000349081A (ja) * | 1999-06-07 | 2000-12-15 | Sony Corp | 酸化膜形成方法 |
JP4344855B2 (ja) * | 1999-08-06 | 2009-10-14 | 野村マイクロ・サイエンス株式会社 | 電子デバイス用基板の有機汚染防止法及び有機汚染を防止した電子デバイス用基板 |
US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
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FR2806892B1 (fr) * | 2000-03-29 | 2002-06-14 | Oreal | Boitier du type boitier de maquillage comportant un couvercle articule |
DE10036691A1 (de) * | 2000-07-27 | 2002-02-14 | Wacker Siltronic Halbleitermat | Verfahren zur chemischen Behandlung von Halbleiterscheiben |
JP4914536B2 (ja) * | 2001-02-28 | 2012-04-11 | 東京エレクトロン株式会社 | 酸化膜形成方法 |
US6821908B1 (en) * | 2001-09-10 | 2004-11-23 | Mia-Com Inc., | In-situ method for producing a hydrogen terminated hydrophobic surface on a silicon wafer |
US20030087532A1 (en) * | 2001-11-01 | 2003-05-08 | Biao Wu | Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices |
-
2002
- 2002-10-11 EP EP02292517A patent/EP1408534B1/en not_active Expired - Lifetime
- 2002-10-11 AT AT02292517T patent/ATE353475T1/de not_active IP Right Cessation
-
2003
- 2003-09-16 US US10/664,781 patent/US20040069321A1/en not_active Abandoned
- 2003-10-14 JP JP2003353888A patent/JP2004200653A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1408534A1 (en) | 2004-04-14 |
US20040069321A1 (en) | 2004-04-15 |
ATE353475T1 (de) | 2007-02-15 |
EP1408534B1 (en) | 2007-02-07 |
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