JP2004327969A - 半導体ウエハの接着前表面処理 - Google Patents
半導体ウエハの接着前表面処理 Download PDFInfo
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- JP2004327969A JP2004327969A JP2004091147A JP2004091147A JP2004327969A JP 2004327969 A JP2004327969 A JP 2004327969A JP 2004091147 A JP2004091147 A JP 2004091147A JP 2004091147 A JP2004091147 A JP 2004091147A JP 2004327969 A JP2004327969 A JP 2004327969A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004381 surface treatment Methods 0.000 title claims description 8
- 235000012431 wafers Nutrition 0.000 claims abstract description 113
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000000356 contaminant Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002344 surface layer Substances 0.000 claims abstract description 3
- 238000011282 treatment Methods 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 16
- 239000010419 fine particle Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 abstract description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 3
- 239000013626 chemical specie Substances 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 description 11
- 150000002430 hydrocarbons Chemical class 0.000 description 11
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000006385 ozonation reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】半導体材料から選ばれたある材料の層を少なくとも表層に備えるウエハの表面処理方法であって、ウエハを第二のウエハと接触させて、処理すべき表面を介してウエハ同士を接着する方法であって、a)オゾン化化学種によりウエハ表面を酸化させ、b)ウエハ表面から分離した且つ又はウエハ表面を覆う微粒子、並びに金属汚染物を除去可能な化学種によりウエハ表面を清浄にし、c)オゾン化溶液によりウエハ表面を酸化させる工程を備えたウエハの表面処理方法。
【選択図】 図1
Description
この化学反応により炭化水素がオゾンにより酸化されて除去される。
実際、請求項でも強調しているように、オゾン化溶液にウエハを浸す初期段階のSC1処理を受けたウエハにカートグラヒック的な測定を行うと、炭化水素に覆われたウエハの部分は炭化水素により保護され、これに対し、(炭化水素汚染物に覆われていない)ウエハの他の部分はSC1溶液を用いた化学的エッチングにより処理されていた。
オゾン小滴を接着装置にスプレーするか、又はこれに加えて、脱イオン水によるオゾン化リンスを効果的に行う。又は、
オゾンガスを供給する。
Claims (9)
- 半導体材料から選ばれたある材料の層を少なくとも表層に備えるウエハの表面処理方法であって、前記ウエハを第二のウエハと接触させて、前記処理すべき表面を介して前記ウエハ同士を接着する方法であって、
a)オゾン化化学種により前記ウエハ表面を酸化させ、
b)前記ウエハ表面から分離した且つ又は前記ウエハ表面を覆う微粒子、並びに金属汚染物を除去可能な化学種により前記ウエハ表面を清浄にし、
c)オゾン化溶液により前記ウエハ表面を酸化させる工程を備えたウエハの表面処理方法。 - 前記工程c)は前記工程b)の後に行うことを特徴とする請求項1記載の表面処理方法。
- 前記工程b)は、
b1)前記分離した且つ又は前記表面を覆う微粒子を除去可能な溶液により前記ウエハ表面を清浄にし、
b2)金属汚染物を除去可能な溶液により前記ウエハ表面を清浄にする連続した二工程を備えたことを特徴とする請求項1又は2記載の表面処理方法。 - 前記工程b1)で用いられる溶液はSC1タイプであることを特徴とする請求項3記載の表面処理方法。
- 前記工程b2)で用いられる溶液はSC2タイプであることを特徴とする請求項3又は4記載の表面処理方法。
- 請求項1乃至5いずれか記載の表面処理方法を有する二枚のウエハを接着する方法であって、前記二枚のウエハの表面各々に前記処理方法を適用した後に、前記二つの表面を介して前記二枚のウエハを接着する工程を備えた接着方法。
- 前記接着は少なくとも部分的に前記二枚のウエハの界面の親水性により行うことを特徴とする請求項6記載の二枚のウエハを接着する方法。
- 前記二枚のウエハの接着は該接着を高める加熱処理を伴うことを特徴とする請求項6又は7記載の二枚のウエハを接着する方法。
- 請求項6乃至8いずれか記載の二枚のウエハを接着する方法を適用してセミコンダクタ・オン・インシュレータ構造を得る応用。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0303699A FR2852869B1 (fr) | 2003-03-26 | 2003-03-26 | Traitement superficiel d'une plaquette semiconductrice avant collage |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004327969A true JP2004327969A (ja) | 2004-11-18 |
JP4541012B2 JP4541012B2 (ja) | 2010-09-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004091147A Expired - Lifetime JP4541012B2 (ja) | 2003-03-26 | 2004-03-26 | 半導体ウエハの接着前表面処理 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1462184B1 (ja) |
JP (1) | JP4541012B2 (ja) |
AT (1) | ATE547188T1 (ja) |
FR (1) | FR2852869B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009194375A (ja) * | 2008-01-16 | 2009-08-27 | Semiconductor Energy Lab Co Ltd | 半導体基板の製造方法及び半導体基板の製造装置 |
JP2009260295A (ja) * | 2008-03-18 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
JP2010526431A (ja) * | 2007-05-03 | 2010-07-29 | エス. オー. アイ. テック シリコン オン インシュレーター テクノロジーズ | 洗浄された歪みシリコン表面を作製するための改良されたプロセス |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024659B (zh) * | 2009-09-17 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 物理气相沉积设备的清洗方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000030992A (ja) * | 1998-07-10 | 2000-01-28 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
US20020062841A1 (en) * | 2000-11-30 | 2002-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for cleaning semiconductor wafers with ozone-containing solvent |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
-
2003
- 2003-03-26 FR FR0303699A patent/FR2852869B1/fr not_active Expired - Lifetime
-
2004
- 2004-03-25 EP EP04290796A patent/EP1462184B1/fr not_active Expired - Lifetime
- 2004-03-25 AT AT04290796T patent/ATE547188T1/de active
- 2004-03-26 JP JP2004091147A patent/JP4541012B2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000030992A (ja) * | 1998-07-10 | 2000-01-28 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
US20020062841A1 (en) * | 2000-11-30 | 2002-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for cleaning semiconductor wafers with ozone-containing solvent |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010526431A (ja) * | 2007-05-03 | 2010-07-29 | エス. オー. アイ. テック シリコン オン インシュレーター テクノロジーズ | 洗浄された歪みシリコン表面を作製するための改良されたプロセス |
JP2009194375A (ja) * | 2008-01-16 | 2009-08-27 | Semiconductor Energy Lab Co Ltd | 半導体基板の製造方法及び半導体基板の製造装置 |
US8985173B2 (en) | 2008-01-16 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method and manufacturing apparatus of semiconductor substrate |
JP2009260295A (ja) * | 2008-03-18 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4541012B2 (ja) | 2010-09-08 |
EP1462184A2 (fr) | 2004-09-29 |
FR2852869A1 (fr) | 2004-10-01 |
EP1462184B1 (fr) | 2012-02-29 |
FR2852869B1 (fr) | 2006-07-14 |
EP1462184A3 (fr) | 2005-12-28 |
ATE547188T1 (de) | 2012-03-15 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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