KR100846271B1 - 실리콘 웨이퍼 세정 방법 - Google Patents
실리콘 웨이퍼 세정 방법 Download PDFInfo
- Publication number
- KR100846271B1 KR100846271B1 KR1020060138057A KR20060138057A KR100846271B1 KR 100846271 B1 KR100846271 B1 KR 100846271B1 KR 1020060138057 A KR1020060138057 A KR 1020060138057A KR 20060138057 A KR20060138057 A KR 20060138057A KR 100846271 B1 KR100846271 B1 KR 100846271B1
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning
- silicon wafer
- present
- metal impurities
- wafer
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 114
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 59
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 35
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 25
- 239000002184 metal Substances 0.000 abstract description 25
- 229910052751 metal Inorganic materials 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 16
- 230000003746 surface roughness Effects 0.000 abstract description 11
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000001976 improved effect Effects 0.000 abstract description 3
- 230000003252 repetitive effect Effects 0.000 abstract description 3
- 230000000704 physical effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 53
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 14
- 239000000356 contaminant Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
Description
Claims (5)
- 실리콘 웨이퍼 세정 방법에 있어서,(S1) 실리콘 웨이퍼 표면을 표준세정1에 따른 SC-1 세정액으로 세정하는 제1단계;(S2) 상기 제1단계 세정된 실리콘 웨이퍼 표면을, 표준세정2에 따른 SC-2 세정액으로 세정하는 제2단계;(S3) 상기 제2단계 세정된 실리콘 웨이퍼 표면을, 0.5% 내지 1% 농도의 불산(HF) 용액으로 세정하는 제3단계; 및(S4) 상기 제3단계 세정된 실리콘 웨이퍼 표면을, 오존수를 이용하여 세정하는 제4단계;를 포함하여 진행하는 것을 특징으로 하는 실리콘 웨이퍼 세정 방법.
- 삭제
- 삭제
- 제1항에 있어서,상기 (S4)단계는, 상기 제3단계 세정이 완료된 실리콘 웨이퍼를 오존수에 1 내지 10 분 동안 침지시켜 진행하는 것을 특징으로 하는 실리콘 웨이퍼 세정 방법.
- 제4항에 있어서,상기 오존수는, 오존 농도가 1 내지 20 ppm이고, 온도는 10 내지 30℃인 것이 사용되는 것을 특징으로 하는 실리콘 웨이퍼 세정 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060138057A KR100846271B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 웨이퍼 세정 방법 |
US11/998,919 US20080156349A1 (en) | 2006-12-29 | 2007-12-03 | Method for cleaning silicon wafer |
CNA2007103023289A CN101211774A (zh) | 2006-12-29 | 2007-12-18 | 用于清洗硅片的方法 |
JP2007334955A JP2008166795A (ja) | 2006-12-29 | 2007-12-26 | シリコンウエハーの洗浄方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060138057A KR100846271B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 웨이퍼 세정 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080062358A KR20080062358A (ko) | 2008-07-03 |
KR100846271B1 true KR100846271B1 (ko) | 2008-07-16 |
Family
ID=39582199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060138057A KR100846271B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 웨이퍼 세정 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080156349A1 (ko) |
JP (1) | JP2008166795A (ko) |
KR (1) | KR100846271B1 (ko) |
CN (1) | CN101211774A (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5201507B2 (ja) * | 2008-09-16 | 2013-06-05 | 独立行政法人物質・材料研究機構 | 生体適合性材料の表面浄化方法とそれに用いる洗浄装置。 |
CN101752213B (zh) * | 2008-12-08 | 2011-09-07 | 北京有色金属研究总院 | 一种消除硅片表面水雾的低温热处理工艺 |
CN101838851A (zh) * | 2010-03-22 | 2010-09-22 | 浙江明峰电子科技有限公司 | 一种单晶或多晶硅片的酸洗工艺 |
CN102070146B (zh) * | 2010-11-26 | 2012-09-05 | 安阳市凤凰光伏科技有限公司 | 太阳能硅电池片碎料的处理方法 |
DE102010063178B4 (de) * | 2010-12-15 | 2014-05-22 | Siltronic Ag | Verfahren zur Reinigung einer Halbleiterscheibe aus Silizium unmittelbar nach einer Politur der Halbleiterscheibe |
CN102251242A (zh) * | 2011-07-05 | 2011-11-23 | 国电宁夏太阳能有限公司 | 多晶硅清洗方法 |
KR101312545B1 (ko) * | 2012-01-04 | 2013-09-30 | 주식회사 엘지실트론 | 표준 웨이퍼 및 그의 생산 방법 |
CN102974565A (zh) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | 一种单晶硅晶圆抛光片的清洗方法 |
CN104979218B (zh) * | 2014-04-04 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | 一种降低晶圆报废率的方法 |
JP6718714B2 (ja) * | 2016-03-25 | 2020-07-08 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2018107338A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社Sumco | ウェーハの洗浄方法 |
CN108511316A (zh) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | 半导体晶片的清洗方法 |
CN109872941A (zh) * | 2017-12-05 | 2019-06-11 | 上海新昇半导体科技有限公司 | 一种硅片的处理方法 |
JP7292107B2 (ja) * | 2019-05-27 | 2023-06-16 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
CN112992654A (zh) * | 2021-02-07 | 2021-06-18 | 西安奕斯伟硅片技术有限公司 | 减少硅片体金属含量的抛光方法及清洗设备 |
CN113787047B (zh) * | 2021-08-18 | 2022-07-26 | 上海中欣晶圆半导体科技有限公司 | 一种去除掺Sb品腐蚀药液残留的方法 |
CN113736580A (zh) * | 2021-09-03 | 2021-12-03 | 上海中欣晶圆半导体科技有限公司 | 一种用于硅片清洗抛光的混酸清洗液及抛光硅片清洗方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950015624A (ko) * | 1993-11-02 | 1995-06-17 | 김주용 | 반도체 제조공정시의 세정방법 |
KR100611008B1 (ko) | 2005-10-21 | 2006-08-10 | 동부일렉트로닉스 주식회사 | 반도체 공정에서 웨이퍼 세정방법 |
KR20060100462A (ko) * | 2003-12-11 | 2006-09-20 | 가부시키가이샤 섬코 | 에피택셜 웨이퍼 및 그 제조 방법 |
KR20060110208A (ko) * | 2005-04-19 | 2006-10-24 | 가부시키가이샤 섬코 | 실리콘 기판의 세정방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3325739B2 (ja) * | 1995-03-27 | 2002-09-17 | 株式会社ピュアレックス | シリコンウエーハの清浄化方法 |
US5837662A (en) * | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
US6503333B2 (en) * | 2000-11-30 | 2003-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for cleaning semiconductor wafers with ozone-containing solvent |
US20030087532A1 (en) * | 2001-11-01 | 2003-05-08 | Biao Wu | Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices |
JP4259881B2 (ja) * | 2003-01-07 | 2009-04-30 | コバレントマテリアル株式会社 | シリコンウエハの清浄化方法 |
-
2006
- 2006-12-29 KR KR1020060138057A patent/KR100846271B1/ko active IP Right Grant
-
2007
- 2007-12-03 US US11/998,919 patent/US20080156349A1/en not_active Abandoned
- 2007-12-18 CN CNA2007103023289A patent/CN101211774A/zh active Pending
- 2007-12-26 JP JP2007334955A patent/JP2008166795A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950015624A (ko) * | 1993-11-02 | 1995-06-17 | 김주용 | 반도체 제조공정시의 세정방법 |
KR20060100462A (ko) * | 2003-12-11 | 2006-09-20 | 가부시키가이샤 섬코 | 에피택셜 웨이퍼 및 그 제조 방법 |
KR20060110208A (ko) * | 2005-04-19 | 2006-10-24 | 가부시키가이샤 섬코 | 실리콘 기판의 세정방법 |
KR100611008B1 (ko) | 2005-10-21 | 2006-08-10 | 동부일렉트로닉스 주식회사 | 반도체 공정에서 웨이퍼 세정방법 |
Also Published As
Publication number | Publication date |
---|---|
US20080156349A1 (en) | 2008-07-03 |
JP2008166795A (ja) | 2008-07-17 |
KR20080062358A (ko) | 2008-07-03 |
CN101211774A (zh) | 2008-07-02 |
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