KR100846271B1 - 실리콘 웨이퍼 세정 방법 - Google Patents
실리콘 웨이퍼 세정 방법 Download PDFInfo
- Publication number
- KR100846271B1 KR100846271B1 KR1020060138057A KR20060138057A KR100846271B1 KR 100846271 B1 KR100846271 B1 KR 100846271B1 KR 1020060138057 A KR1020060138057 A KR 1020060138057A KR 20060138057 A KR20060138057 A KR 20060138057A KR 100846271 B1 KR100846271 B1 KR 100846271B1
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning
- silicon wafer
- present
- metal impurities
- wafer
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 114
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 59
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 35
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 25
- 239000002184 metal Substances 0.000 abstract description 25
- 229910052751 metal Inorganic materials 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 16
- 230000003746 surface roughness Effects 0.000 abstract description 11
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000001976 improved effect Effects 0.000 abstract description 3
- 230000003252 repetitive effect Effects 0.000 abstract description 3
- 230000000704 physical effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 53
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 14
- 239000000356 contaminant Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C11D2111/22—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
Description
Claims (5)
- 실리콘 웨이퍼 세정 방법에 있어서,(S1) 실리콘 웨이퍼 표면을 표준세정1에 따른 SC-1 세정액으로 세정하는 제1단계;(S2) 상기 제1단계 세정된 실리콘 웨이퍼 표면을, 표준세정2에 따른 SC-2 세정액으로 세정하는 제2단계;(S3) 상기 제2단계 세정된 실리콘 웨이퍼 표면을, 0.5% 내지 1% 농도의 불산(HF) 용액으로 세정하는 제3단계; 및(S4) 상기 제3단계 세정된 실리콘 웨이퍼 표면을, 오존수를 이용하여 세정하는 제4단계;를 포함하여 진행하는 것을 특징으로 하는 실리콘 웨이퍼 세정 방법.
- 삭제
- 삭제
- 제1항에 있어서,상기 (S4)단계는, 상기 제3단계 세정이 완료된 실리콘 웨이퍼를 오존수에 1 내지 10 분 동안 침지시켜 진행하는 것을 특징으로 하는 실리콘 웨이퍼 세정 방법.
- 제4항에 있어서,상기 오존수는, 오존 농도가 1 내지 20 ppm이고, 온도는 10 내지 30℃인 것이 사용되는 것을 특징으로 하는 실리콘 웨이퍼 세정 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060138057A KR100846271B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 웨이퍼 세정 방법 |
US11/998,919 US20080156349A1 (en) | 2006-12-29 | 2007-12-03 | Method for cleaning silicon wafer |
CNA2007103023289A CN101211774A (zh) | 2006-12-29 | 2007-12-18 | 用于清洗硅片的方法 |
JP2007334955A JP2008166795A (ja) | 2006-12-29 | 2007-12-26 | シリコンウエハーの洗浄方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060138057A KR100846271B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 웨이퍼 세정 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080062358A KR20080062358A (ko) | 2008-07-03 |
KR100846271B1 true KR100846271B1 (ko) | 2008-07-16 |
Family
ID=39582199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060138057A KR100846271B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 웨이퍼 세정 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080156349A1 (ko) |
JP (1) | JP2008166795A (ko) |
KR (1) | KR100846271B1 (ko) |
CN (1) | CN101211774A (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5201507B2 (ja) * | 2008-09-16 | 2013-06-05 | 独立行政法人物質・材料研究機構 | 生体適合性材料の表面浄化方法とそれに用いる洗浄装置。 |
CN101752213B (zh) * | 2008-12-08 | 2011-09-07 | 北京有色金属研究总院 | 一种消除硅片表面水雾的低温热处理工艺 |
CN101838851A (zh) * | 2010-03-22 | 2010-09-22 | 浙江明峰电子科技有限公司 | 一种单晶或多晶硅片的酸洗工艺 |
CN102070146B (zh) * | 2010-11-26 | 2012-09-05 | 安阳市凤凰光伏科技有限公司 | 太阳能硅电池片碎料的处理方法 |
DE102010063178B4 (de) * | 2010-12-15 | 2014-05-22 | Siltronic Ag | Verfahren zur Reinigung einer Halbleiterscheibe aus Silizium unmittelbar nach einer Politur der Halbleiterscheibe |
CN102251242A (zh) * | 2011-07-05 | 2011-11-23 | 国电宁夏太阳能有限公司 | 多晶硅清洗方法 |
KR101312545B1 (ko) * | 2012-01-04 | 2013-09-30 | 주식회사 엘지실트론 | 표준 웨이퍼 및 그의 생산 방법 |
CN102974565A (zh) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | 一种单晶硅晶圆抛光片的清洗方法 |
CN104979218B (zh) * | 2014-04-04 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | 一种降低晶圆报废率的方法 |
JP6718714B2 (ja) * | 2016-03-25 | 2020-07-08 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2018107338A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社Sumco | ウェーハの洗浄方法 |
CN108511316A (zh) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | 半导体晶片的清洗方法 |
CN109872941A (zh) * | 2017-12-05 | 2019-06-11 | 上海新昇半导体科技有限公司 | 一种硅片的处理方法 |
JP7292107B2 (ja) * | 2019-05-27 | 2023-06-16 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
CN112992654A (zh) * | 2021-02-07 | 2021-06-18 | 西安奕斯伟硅片技术有限公司 | 减少硅片体金属含量的抛光方法及清洗设备 |
CN113787047B (zh) * | 2021-08-18 | 2022-07-26 | 上海中欣晶圆半导体科技有限公司 | 一种去除掺Sb品腐蚀药液残留的方法 |
CN113736580A (zh) * | 2021-09-03 | 2021-12-03 | 上海中欣晶圆半导体科技有限公司 | 一种用于硅片清洗抛光的混酸清洗液及抛光硅片清洗方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950015624A (ko) * | 1993-11-02 | 1995-06-17 | 김주용 | 반도체 제조공정시의 세정방법 |
KR100611008B1 (ko) | 2005-10-21 | 2006-08-10 | 동부일렉트로닉스 주식회사 | 반도체 공정에서 웨이퍼 세정방법 |
KR20060100462A (ko) * | 2003-12-11 | 2006-09-20 | 가부시키가이샤 섬코 | 에피택셜 웨이퍼 및 그 제조 방법 |
KR20060110208A (ko) * | 2005-04-19 | 2006-10-24 | 가부시키가이샤 섬코 | 실리콘 기판의 세정방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3325739B2 (ja) * | 1995-03-27 | 2002-09-17 | 株式会社ピュアレックス | シリコンウエーハの清浄化方法 |
US5837662A (en) * | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
US6503333B2 (en) * | 2000-11-30 | 2003-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for cleaning semiconductor wafers with ozone-containing solvent |
US20030087532A1 (en) * | 2001-11-01 | 2003-05-08 | Biao Wu | Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices |
JP4259881B2 (ja) * | 2003-01-07 | 2009-04-30 | コバレントマテリアル株式会社 | シリコンウエハの清浄化方法 |
-
2006
- 2006-12-29 KR KR1020060138057A patent/KR100846271B1/ko active IP Right Grant
-
2007
- 2007-12-03 US US11/998,919 patent/US20080156349A1/en not_active Abandoned
- 2007-12-18 CN CNA2007103023289A patent/CN101211774A/zh active Pending
- 2007-12-26 JP JP2007334955A patent/JP2008166795A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950015624A (ko) * | 1993-11-02 | 1995-06-17 | 김주용 | 반도체 제조공정시의 세정방법 |
KR20060100462A (ko) * | 2003-12-11 | 2006-09-20 | 가부시키가이샤 섬코 | 에피택셜 웨이퍼 및 그 제조 방법 |
KR20060110208A (ko) * | 2005-04-19 | 2006-10-24 | 가부시키가이샤 섬코 | 실리콘 기판의 세정방법 |
KR100611008B1 (ko) | 2005-10-21 | 2006-08-10 | 동부일렉트로닉스 주식회사 | 반도체 공정에서 웨이퍼 세정방법 |
Also Published As
Publication number | Publication date |
---|---|
CN101211774A (zh) | 2008-07-02 |
US20080156349A1 (en) | 2008-07-03 |
KR20080062358A (ko) | 2008-07-03 |
JP2008166795A (ja) | 2008-07-17 |
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