ATE547188T1 - Oberflächenbehandlung einer halbleiterscheibe vor dem kleben - Google Patents
Oberflächenbehandlung einer halbleiterscheibe vor dem klebenInfo
- Publication number
- ATE547188T1 ATE547188T1 AT04290796T AT04290796T ATE547188T1 AT E547188 T1 ATE547188 T1 AT E547188T1 AT 04290796 T AT04290796 T AT 04290796T AT 04290796 T AT04290796 T AT 04290796T AT E547188 T1 ATE547188 T1 AT E547188T1
- Authority
- AT
- Austria
- Prior art keywords
- surface treatment
- before bonding
- disc before
- semiconductor disc
- ozonised
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000004381 surface treatment Methods 0.000 title 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0303699A FR2852869B1 (fr) | 2003-03-26 | 2003-03-26 | Traitement superficiel d'une plaquette semiconductrice avant collage |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE547188T1 true ATE547188T1 (de) | 2012-03-15 |
Family
ID=32799752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04290796T ATE547188T1 (de) | 2003-03-26 | 2004-03-25 | Oberflächenbehandlung einer halbleiterscheibe vor dem kleben |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1462184B1 (de) |
JP (1) | JP4541012B2 (de) |
AT (1) | ATE547188T1 (de) |
FR (1) | FR2852869B1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8461055B2 (en) * | 2007-05-03 | 2013-06-11 | Soitec | Process for preparing cleaned surfaces of strained silicon |
US7947570B2 (en) * | 2008-01-16 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method and manufacturing apparatus of semiconductor substrate |
US8003483B2 (en) * | 2008-03-18 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
CN102024659B (zh) * | 2009-09-17 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 物理气相沉积设备的清洗方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
JP3385972B2 (ja) * | 1998-07-10 | 2003-03-10 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
US6503333B2 (en) * | 2000-11-30 | 2003-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for cleaning semiconductor wafers with ozone-containing solvent |
-
2003
- 2003-03-26 FR FR0303699A patent/FR2852869B1/fr not_active Expired - Lifetime
-
2004
- 2004-03-25 EP EP04290796A patent/EP1462184B1/de not_active Expired - Lifetime
- 2004-03-25 AT AT04290796T patent/ATE547188T1/de active
- 2004-03-26 JP JP2004091147A patent/JP4541012B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4541012B2 (ja) | 2010-09-08 |
EP1462184A2 (de) | 2004-09-29 |
FR2852869A1 (fr) | 2004-10-01 |
EP1462184B1 (de) | 2012-02-29 |
JP2004327969A (ja) | 2004-11-18 |
FR2852869B1 (fr) | 2006-07-14 |
EP1462184A3 (de) | 2005-12-28 |
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