DE60230732D1 - Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat - Google Patents

Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat

Info

Publication number
DE60230732D1
DE60230732D1 DE60230732T DE60230732T DE60230732D1 DE 60230732 D1 DE60230732 D1 DE 60230732D1 DE 60230732 T DE60230732 T DE 60230732T DE 60230732 T DE60230732 T DE 60230732T DE 60230732 D1 DE60230732 D1 DE 60230732D1
Authority
DE
Germany
Prior art keywords
substrate
microcyristalline
separation
silicone layer
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60230732T
Other languages
English (en)
Inventor
Edward Aloys Hamers
Arno Hendrikus Smets
De Sanden Mauritius Cornelius Van
Daniel Cornelis Schram
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eindhoven Technical University
Original Assignee
Eindhoven Technical University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eindhoven Technical University filed Critical Eindhoven Technical University
Application granted granted Critical
Publication of DE60230732D1 publication Critical patent/DE60230732D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
DE60230732T 2001-04-16 2002-04-12 Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat Expired - Lifetime DE60230732D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1017849A NL1017849C2 (nl) 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
PCT/NL2002/000244 WO2002083979A2 (en) 2001-04-16 2002-04-12 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

Publications (1)

Publication Number Publication Date
DE60230732D1 true DE60230732D1 (de) 2009-02-26

Family

ID=19773241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60230732T Expired - Lifetime DE60230732D1 (de) 2001-04-16 2002-04-12 Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat

Country Status (17)

Country Link
US (1) US7160809B2 (de)
EP (1) EP1381710B1 (de)
KR (1) KR100758921B1 (de)
CN (1) CN1279211C (de)
AT (1) ATE420221T1 (de)
AU (1) AU2002253725B2 (de)
BR (1) BR0208601A (de)
CA (1) CA2442575C (de)
CY (1) CY1108949T1 (de)
DE (1) DE60230732D1 (de)
ES (1) ES2321165T3 (de)
MX (1) MXPA03008426A (de)
NL (1) NL1017849C2 (de)
PT (1) PT1381710E (de)
RU (1) RU2258764C1 (de)
WO (1) WO2002083979A2 (de)
ZA (1) ZA200307301B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
CA2721192A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
EP2141259B1 (de) * 2008-07-04 2018-10-31 ABB Schweiz AG Abscheidungsverfahren zur Passivierung von Silizium-Wafern
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
US20120213929A1 (en) * 2011-02-18 2012-08-23 Tokyo Electron Limited Method of operating filament assisted chemical vapor deposition system
US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
KR102111702B1 (ko) 2011-04-07 2020-05-15 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
JP6110106B2 (ja) * 2012-11-13 2017-04-05 Ｊｓｗアフティ株式会社 薄膜形成装置
KR102227176B1 (ko) * 2012-11-23 2021-03-12 피코순 오와이 Ald 반응기 내에서의 기판 로딩
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
RU2733941C2 (ru) * 2019-04-01 2020-10-08 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковой структуры

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257130A (ja) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan ラジカルビ−ムを用いた薄膜形成方法
JPS60194065A (ja) * 1984-11-09 1985-10-02 Hitachi Ltd 分子線堆積方法
EP0241317B1 (de) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Herstellungsverfahren einer niedergeschlagenen Schicht
NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
WO2000074932A1 (en) * 1999-06-03 2000-12-14 The Penn State Research Foundation Deposited thin film void-column network materials

Also Published As

Publication number Publication date
MXPA03008426A (es) 2004-11-12
EP1381710B1 (de) 2009-01-07
US7160809B2 (en) 2007-01-09
AU2002253725B2 (en) 2006-10-05
CA2442575A1 (en) 2002-10-24
RU2003133288A (ru) 2005-05-10
WO2002083979A2 (en) 2002-10-24
BR0208601A (pt) 2004-03-23
CN1279211C (zh) 2006-10-11
KR100758921B1 (ko) 2007-09-14
NL1017849C2 (nl) 2002-10-30
CA2442575C (en) 2011-07-19
ATE420221T1 (de) 2009-01-15
ES2321165T3 (es) 2009-06-03
ZA200307301B (en) 2004-05-21
KR20030092060A (ko) 2003-12-03
US20040097056A1 (en) 2004-05-20
WO2002083979A3 (en) 2003-04-24
PT1381710E (pt) 2009-04-15
EP1381710A2 (de) 2004-01-21
CY1108949T1 (el) 2014-07-02
CN1503857A (zh) 2004-06-09
RU2258764C1 (ru) 2005-08-20

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