DE60104753D1 - Verfahren zur Herstellung einer dünnen Schicht auf einem Halbleitersubstrat - Google Patents

Verfahren zur Herstellung einer dünnen Schicht auf einem Halbleitersubstrat

Info

Publication number
DE60104753D1
DE60104753D1 DE60104753T DE60104753T DE60104753D1 DE 60104753 D1 DE60104753 D1 DE 60104753D1 DE 60104753 T DE60104753 T DE 60104753T DE 60104753 T DE60104753 T DE 60104753T DE 60104753 D1 DE60104753 D1 DE 60104753D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor substrate
thin layer
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60104753T
Other languages
English (en)
Other versions
DE60104753T2 (de
Inventor
Hideaki Fukuda
Hiroki Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM Japan KK
Original Assignee
ASM Japan KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Japan KK filed Critical ASM Japan KK
Publication of DE60104753D1 publication Critical patent/DE60104753D1/de
Application granted granted Critical
Publication of DE60104753T2 publication Critical patent/DE60104753T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE60104753T 2000-03-27 2001-03-19 Verfahren zur Herstellung einer dünnen Schicht auf einem Halbleitersubstrat Expired - Fee Related DE60104753T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000087530 2000-03-27
JP2000087530A JP3549188B2 (ja) 2000-03-27 2000-03-27 半導体基板への薄膜成膜方法

Publications (2)

Publication Number Publication Date
DE60104753D1 true DE60104753D1 (de) 2004-09-16
DE60104753T2 DE60104753T2 (de) 2005-09-01

Family

ID=18603526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60104753T Expired - Fee Related DE60104753T2 (de) 2000-03-27 2001-03-19 Verfahren zur Herstellung einer dünnen Schicht auf einem Halbleitersubstrat

Country Status (5)

Country Link
US (1) US6524955B2 (de)
EP (1) EP1138801B1 (de)
JP (1) JP3549188B2 (de)
KR (1) KR100720060B1 (de)
DE (1) DE60104753T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
US6827987B2 (en) * 2001-07-27 2004-12-07 Applied Materials, Inc. Method of reducing an electrostatic charge on a substrate during a PECVD process
US7144822B1 (en) * 2002-02-06 2006-12-05 Novellus Systems, Inc. High density plasma process for optimum film quality and electrical results
US6921556B2 (en) * 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6991959B2 (en) * 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4066332B2 (ja) * 2002-10-10 2008-03-26 日本エー・エス・エム株式会社 シリコンカーバイド膜の製造方法
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7365029B2 (en) * 2002-12-20 2008-04-29 Applied Materials, Inc. Method for silicon nitride chemical vapor deposition
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
JP4320389B2 (ja) * 2003-02-28 2009-08-26 関東電化工業株式会社 Ｃｖｄチャンバーのクリーニング方法およびそれに用いるクリーニングガス
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
US7419702B2 (en) * 2004-03-31 2008-09-02 Tokyo Electron Limited Method for processing a substrate
US11043401B2 (en) 2017-04-19 2021-06-22 Ngk Spark Plug Co., Ltd. Ceramic member
JP6903525B2 (ja) * 2017-04-19 2021-07-14 日本特殊陶業株式会社 セラミックス部材

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JP2890494B2 (ja) 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
US5380566A (en) 1993-06-21 1995-01-10 Applied Materials, Inc. Method of limiting sticking of body to susceptor in a deposition treatment
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
KR970052037A (ko) * 1995-12-19 1997-07-29 제임스 조셉 드롱 활성 기판상에 규화 텅스텐 막을 피복하기 전에 피복실을 예비처리하는 방법
US5904779A (en) 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system
JP3624628B2 (ja) * 1997-05-20 2005-03-02 東京エレクトロン株式会社 成膜方法及び成膜装置
JP3160229B2 (ja) 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
JPH1160356A (ja) 1997-08-08 1999-03-02 Shin Etsu Chem Co Ltd 窒化アルミニウム複合基材及びこれを用いた窒化アルミニウム複合発熱体、窒化アルミニウム複合静電チャック、窒化アルミニウム複合ヒータ付静電チャック

Also Published As

Publication number Publication date
US20010037769A1 (en) 2001-11-08
JP2001274102A (ja) 2001-10-05
JP3549188B2 (ja) 2004-08-04
EP1138801A1 (de) 2001-10-04
KR20010090570A (ko) 2001-10-18
EP1138801B1 (de) 2004-08-11
DE60104753T2 (de) 2005-09-01
US6524955B2 (en) 2003-02-25
KR100720060B1 (ko) 2007-05-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee