DE60044639D1 - Verfahren zur herstellung einer halbleitervorrichtung - Google Patents
Verfahren zur herstellung einer halbleitervorrichtungInfo
- Publication number
- DE60044639D1 DE60044639D1 DE60044639T DE60044639T DE60044639D1 DE 60044639 D1 DE60044639 D1 DE 60044639D1 DE 60044639 T DE60044639 T DE 60044639T DE 60044639 T DE60044639 T DE 60044639T DE 60044639 D1 DE60044639 D1 DE 60044639D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99204374 | 1999-12-17 | ||
PCT/EP2000/012136 WO2001045156A1 (en) | 1999-12-17 | 2000-12-01 | A method of manufacturing a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60044639D1 true DE60044639D1 (de) | 2010-08-19 |
Family
ID=8241019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60044639T Expired - Lifetime DE60044639D1 (de) | 1999-12-17 | 2000-12-01 | Verfahren zur herstellung einer halbleitervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (2) | US6406963B2 (de) |
EP (1) | EP1157417B1 (de) |
JP (1) | JP2003517209A (de) |
KR (1) | KR100702282B1 (de) |
DE (1) | DE60044639D1 (de) |
TW (1) | TW514992B (de) |
WO (1) | WO2001045156A1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100352909B1 (ko) * | 2000-03-17 | 2002-09-16 | 삼성전자 주식회사 | 반도체소자의 자기정렬 콘택 구조체 형성방법 및 그에의해 형성된 자기정렬 콘택 구조체 |
KR100372643B1 (ko) * | 2000-06-30 | 2003-02-17 | 주식회사 하이닉스반도체 | 다마신 공정을 이용한 반도체 소자의 제조방법 |
JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
JP3669919B2 (ja) * | 2000-12-04 | 2005-07-13 | シャープ株式会社 | 半導体装置の製造方法 |
US6787424B1 (en) * | 2001-02-09 | 2004-09-07 | Advanced Micro Devices, Inc. | Fully depleted SOI transistor with elevated source and drain |
US6583060B2 (en) * | 2001-07-13 | 2003-06-24 | Micron Technology, Inc. | Dual depth trench isolation |
KR100442780B1 (ko) * | 2001-12-24 | 2004-08-04 | 동부전자 주식회사 | 반도체 소자의 트랜지스터 제조 방법 |
KR100477543B1 (ko) * | 2002-07-26 | 2005-03-18 | 동부아남반도체 주식회사 | 단채널 트랜지스터 형성방법 |
JP3865233B2 (ja) * | 2002-08-19 | 2007-01-10 | 富士通株式会社 | Cmos集積回路装置 |
US7033894B1 (en) * | 2003-08-05 | 2006-04-25 | Advanced Micro Devices, Inc. | Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing |
US7078282B2 (en) * | 2003-12-30 | 2006-07-18 | Intel Corporation | Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films |
US6887785B1 (en) | 2004-05-13 | 2005-05-03 | International Business Machines Corporation | Etching openings of different depths using a single mask layer method and structure |
KR100606933B1 (ko) * | 2004-06-30 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
US7166506B2 (en) * | 2004-12-17 | 2007-01-23 | Intel Corporation | Poly open polish process |
JP2007005489A (ja) * | 2005-06-22 | 2007-01-11 | Seiko Instruments Inc | 半導体装置の製造方法 |
US7964921B2 (en) * | 2005-08-22 | 2011-06-21 | Renesas Electronics Corporation | MOSFET and production method of semiconductor device |
US20070105295A1 (en) * | 2005-11-08 | 2007-05-10 | Dongbuanam Semiconductor Inc. | Method for forming lightly-doped-drain metal-oxide-semiconductor (LDD MOS) device |
KR100732767B1 (ko) * | 2005-12-29 | 2007-06-27 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스 채널용 트렌치 형성방법 |
JP5380827B2 (ja) | 2006-12-11 | 2014-01-08 | ソニー株式会社 | 半導体装置の製造方法 |
US7871915B2 (en) * | 2008-09-26 | 2011-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming metal gates in a gate last process |
CN102087980A (zh) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | 高性能半导体器件及其形成方法 |
US8664070B2 (en) * | 2009-12-21 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | High temperature gate replacement process |
DE102010002411B4 (de) * | 2010-02-26 | 2012-10-31 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung von Kontaktbalken mit reduzierter Randzonenkapazität in einem Halbleiterbauelement |
CN102214576A (zh) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
KR20110120695A (ko) * | 2010-04-29 | 2011-11-04 | 삼성전자주식회사 | 반도체 소자 |
US20120098043A1 (en) * | 2010-10-25 | 2012-04-26 | Ya-Hsueh Hsieh | Semiconductor device having metal gate and manufacturing method thereof |
US8084311B1 (en) * | 2010-11-17 | 2011-12-27 | International Business Machines Corporation | Method of forming replacement metal gate with borderless contact and structure thereof |
US20120289015A1 (en) * | 2011-05-13 | 2012-11-15 | United Microelectronics Corp. | Method for fabricating semiconductor device with enhanced channel stress |
US8946031B2 (en) * | 2012-01-18 | 2015-02-03 | United Microelectronics Corp. | Method for fabricating MOS device |
CN105810729B (zh) * | 2014-12-29 | 2018-09-11 | 中国科学院微电子研究所 | 鳍式场效应晶体管及其制造方法 |
US10714621B2 (en) * | 2016-12-14 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of forming doped channel thereof |
US10153348B1 (en) | 2017-07-05 | 2018-12-11 | Micron Technology, Inc. | Memory configurations |
US10276576B2 (en) | 2017-07-05 | 2019-04-30 | Micron Technology, Inc. | Gated diode memory cells |
US10297493B2 (en) | 2017-07-05 | 2019-05-21 | Micron Technology, Inc. | Trench isolation interfaces |
US10153039B1 (en) | 2017-07-05 | 2018-12-11 | Micron Technology, Inc. | Memory cells programmed via multi-mechanism charge transports |
US10262736B2 (en) | 2017-07-05 | 2019-04-16 | Micron Technology, Inc. | Multifunctional memory cells |
US10411026B2 (en) | 2017-07-05 | 2019-09-10 | Micron Technology, Inc. | Integrated computing structures formed on silicon |
US20190013387A1 (en) | 2017-07-05 | 2019-01-10 | Micron Technology, Inc. | Memory cell structures |
US10374101B2 (en) | 2017-07-05 | 2019-08-06 | Micron Technology, Inc. | Memory arrays |
US10176870B1 (en) | 2017-07-05 | 2019-01-08 | Micron Technology, Inc. | Multifunctional memory cells |
US10153381B1 (en) | 2017-07-05 | 2018-12-11 | Micron Technology, Inc. | Memory cells having an access gate and a control gate and dielectric stacks above and below the access gate |
KR102078626B1 (ko) | 2019-08-16 | 2020-02-18 | 정현욱 | 한글 학습 방법 및 그 장치 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739579A (en) * | 1992-06-29 | 1998-04-14 | Intel Corporation | Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections |
JPH0653237A (ja) * | 1992-07-31 | 1994-02-25 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US5804846A (en) * | 1996-05-28 | 1998-09-08 | Harris Corporation | Process for forming a self-aligned raised source/drain MOS device and device therefrom |
US5714398A (en) * | 1996-07-16 | 1998-02-03 | National Science Council Of Republic Of China | Self-aligned tungsten strapped source/drain and gate technology for deep submicron CMOS |
US6063675A (en) * | 1996-10-28 | 2000-05-16 | Texas Instruments Incorporated | Method of forming a MOSFET using a disposable gate with a sidewall dielectric |
US5856225A (en) | 1997-11-24 | 1999-01-05 | Chartered Semiconductor Manufacturing Ltd | Creation of a self-aligned, ion implanted channel region, after source and drain formation |
JP3523093B2 (ja) * | 1997-11-28 | 2004-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6127232A (en) * | 1997-12-30 | 2000-10-03 | Texas Instruments Incorporated | Disposable gate/replacement gate MOSFETS for sub-0.1 micron gate length and ultra-shallow junctions |
US6274421B1 (en) * | 1998-01-09 | 2001-08-14 | Sharp Laboratories Of America, Inc. | Method of making metal gate sub-micron MOS transistor |
US6177303B1 (en) * | 1998-09-28 | 2001-01-23 | U.S. Philips Corporation | Method of manufacturing a semiconductor device with a field effect transistor |
US6225173B1 (en) * | 1998-11-06 | 2001-05-01 | Advanced Micro Devices, Inc. | Recessed channel structure for manufacturing shallow source/drain extensions |
US6200865B1 (en) * | 1998-12-04 | 2001-03-13 | Advanced Micro Devices, Inc. | Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate |
US6245618B1 (en) * | 1999-02-03 | 2001-06-12 | Advanced Micro Devices, Inc. | Mosfet with localized amorphous region with retrograde implantation |
US6281559B1 (en) * | 1999-03-03 | 2001-08-28 | Advanced Micro Devices, Inc. | Gate stack structure for variable threshold voltage |
US6232164B1 (en) * | 1999-05-24 | 2001-05-15 | Taiwan Semiconductor Manufacturing Company | Process of making CMOS device structure having an anti-SCE block implant |
DE19940758A1 (de) * | 1999-08-27 | 2001-03-15 | Infineon Technologies Ag | Verfahren zur Herstellung eines HF-FET und HF-FET |
US6146955A (en) * | 1999-11-12 | 2000-11-14 | United Microelectronics Corp. | Method for forming dynamic random access memory device with an ultra-short channel and an ultra-shallow junction |
-
2000
- 2000-11-21 TW TW089124663A patent/TW514992B/zh not_active IP Right Cessation
- 2000-12-01 KR KR1020017010365A patent/KR100702282B1/ko not_active IP Right Cessation
- 2000-12-01 EP EP00989941A patent/EP1157417B1/de not_active Expired - Lifetime
- 2000-12-01 WO PCT/EP2000/012136 patent/WO2001045156A1/en active Application Filing
- 2000-12-01 JP JP2001545357A patent/JP2003517209A/ja not_active Withdrawn
- 2000-12-01 DE DE60044639T patent/DE60044639D1/de not_active Expired - Lifetime
- 2000-12-14 US US09/738,917 patent/US6406963B2/en not_active Expired - Lifetime
-
2002
- 2002-03-18 US US10/100,595 patent/US6743682B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW514992B (en) | 2002-12-21 |
US6743682B2 (en) | 2004-06-01 |
KR100702282B1 (ko) | 2007-03-30 |
EP1157417A1 (de) | 2001-11-28 |
EP1157417B1 (de) | 2010-07-07 |
US20020094647A1 (en) | 2002-07-18 |
JP2003517209A (ja) | 2003-05-20 |
US20010004542A1 (en) | 2001-06-21 |
WO2001045156A1 (en) | 2001-06-21 |
KR20010102168A (ko) | 2001-11-15 |
US6406963B2 (en) | 2002-06-18 |
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