DE60028912D1 - Verfahren zur Herstellung von Hableitervorrichtungen - Google Patents

Verfahren zur Herstellung von Hableitervorrichtungen

Info

Publication number
DE60028912D1
DE60028912D1 DE60028912T DE60028912T DE60028912D1 DE 60028912 D1 DE60028912 D1 DE 60028912D1 DE 60028912 T DE60028912 T DE 60028912T DE 60028912 T DE60028912 T DE 60028912T DE 60028912 D1 DE60028912 D1 DE 60028912D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
producing semiconductor
producing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60028912T
Other languages
English (en)
Other versions
DE60028912T2 (de
Inventor
Takashi Sugino
Hideo Senoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of DE60028912D1 publication Critical patent/DE60028912D1/de
Application granted granted Critical
Publication of DE60028912T2 publication Critical patent/DE60028912T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2224/27—Manufacturing methods
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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    • H01L2924/078—Adhesive characteristics other than chemical
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    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Die Bonding (AREA)
DE60028912T 1999-11-30 2000-11-24 Verfahren zur Herstellung von Halbleitervorrichtungen Expired - Lifetime DE60028912T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34033499A JP4409014B2 (ja) 1999-11-30 1999-11-30 半導体装置の製造方法
JP34033499 1999-11-30

Publications (2)

Publication Number Publication Date
DE60028912D1 true DE60028912D1 (de) 2006-08-03
DE60028912T2 DE60028912T2 (de) 2007-02-15

Family

ID=18335954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028912T Expired - Lifetime DE60028912T2 (de) 1999-11-30 2000-11-24 Verfahren zur Herstellung von Halbleitervorrichtungen

Country Status (10)

Country Link
US (1) US6656819B1 (de)
EP (1) EP1107299B1 (de)
JP (1) JP4409014B2 (de)
KR (1) KR100655035B1 (de)
CN (1) CN1168132C (de)
DE (1) DE60028912T2 (de)
HK (1) HK1035261A1 (de)
MY (1) MY125340A (de)
SG (1) SG90205A1 (de)
TW (1) TW487981B (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4649745B2 (ja) * 2001-02-01 2011-03-16 ソニー株式会社 発光素子の転写方法
JP4669162B2 (ja) * 2001-06-28 2011-04-13 株式会社ディスコ 半導体ウェーハの分割システム及び分割方法
US6686225B2 (en) * 2001-07-27 2004-02-03 Texas Instruments Incorporated Method of separating semiconductor dies from a wafer
JP2003045901A (ja) * 2001-08-01 2003-02-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003077940A (ja) * 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP3892703B2 (ja) 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
TWI241674B (en) * 2001-11-30 2005-10-11 Disco Corp Manufacturing method of semiconductor chip
JP4055405B2 (ja) * 2001-12-03 2008-03-05 ソニー株式会社 電子部品及びその製造方法
US7042072B1 (en) * 2002-08-02 2006-05-09 Amkor Technology, Inc. Semiconductor package and method of manufacturing the same which reduces warpage
JP4307825B2 (ja) * 2002-08-28 2009-08-05 リンテック株式会社 半導体ウエハの保護構造、半導体ウエハの保護方法、これらに用いる積層保護シートおよび半導体ウエハの加工方法
AU2003284410A1 (en) * 2002-11-19 2004-06-15 Ishikawa Seisakusho, Ltd. Pixel control element selection transfer method, pixel control element mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate
JP4599075B2 (ja) * 2003-03-26 2010-12-15 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP2004311576A (ja) * 2003-04-03 2004-11-04 Toshiba Corp 半導体装置の製造方法
JP2004319045A (ja) * 2003-04-18 2004-11-11 Lintec Corp 光ディスク製造用シートおよび光ディスク
JP4234630B2 (ja) * 2003-05-29 2009-03-04 古河電気工業株式会社 貫通構造を有する薄膜化回路基板の製造方法と保護用粘着テープ
MY142246A (en) * 2003-06-10 2010-11-15 Hitachi Chemical Co Ltd Adhesive film and process for preparing the same as well as adhesive sheet and semiconductor device
JP2005019571A (ja) * 2003-06-24 2005-01-20 Canon Inc チップの実装方法及び実装基板の製造装置
GB2404280B (en) * 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
US20050023682A1 (en) * 2003-07-31 2005-02-03 Morio Nakao High reliability chip scale package
US7183137B2 (en) * 2003-12-01 2007-02-27 Taiwan Semiconductor Manufacturing Company Method for dicing semiconductor wafers
TWI320583B (en) * 2003-12-26 2010-02-11 Advanced Semiconductor Eng Process for backside grinding a bumped wafer
JP4165467B2 (ja) * 2004-07-12 2008-10-15 セイコーエプソン株式会社 ダイシングシート、半導体装置の製造方法
JP4690697B2 (ja) * 2004-11-01 2011-06-01 古河電気工業株式会社 半導体チップの製造方法
TWI287838B (en) * 2004-11-11 2007-10-01 Yamaha Corp Semiconductor device, semiconductor wafer, chip size package, and methods of manufacturing and inspection therefor
US8124455B2 (en) * 2005-04-02 2012-02-28 Stats Chippac Ltd. Wafer strength reinforcement system for ultra thin wafer thinning
TWI267133B (en) * 2005-06-03 2006-11-21 Touch Micro System Tech Method of segmenting a wafer
CN100382281C (zh) * 2005-06-14 2008-04-16 探微科技股份有限公司 晶片切割的方法
JP4791843B2 (ja) * 2006-02-14 2011-10-12 株式会社ディスコ 接着フィルム付きデバイスの製造方法
JP4874769B2 (ja) * 2006-11-14 2012-02-15 株式会社東芝 表面保護テープ及びこの表面保護テープを用いた半導体装置の製造方法
SG148884A1 (en) * 2007-06-15 2009-01-29 Micron Technology Inc Method and system for removing tape from substrates
JP2009231779A (ja) * 2008-03-25 2009-10-08 Lintec Corp 半導体装置の製造方法
JP4640498B2 (ja) * 2008-12-11 2011-03-02 ソニー株式会社 素子の転写方法、素子配置基板、並びにデバイス及びその製造方法
JP5426314B2 (ja) * 2009-10-19 2014-02-26 株式会社ディスコ 半導体デバイスの製造方法
KR101221871B1 (ko) * 2009-12-07 2013-01-15 한국전자통신연구원 반도체 소자의 제조방법
CN102244039B (zh) * 2010-05-11 2014-02-05 扬州杰利半导体有限公司 一种半导体晶片的裂片方法
JP5158896B2 (ja) * 2010-08-09 2013-03-06 古河電気工業株式会社 半導体チップの製造方法
JP2013105834A (ja) * 2011-11-11 2013-05-30 Hitachi Chemical Co Ltd 半導体装置の製造方法、半導体装置及び電子部品
JP5976326B2 (ja) 2012-01-25 2016-08-23 日東電工株式会社 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム
KR101327528B1 (ko) * 2012-06-14 2013-11-08 주식회사 케이엔제이 웨이퍼 칩 연마방법
JP2014033177A (ja) * 2012-07-12 2014-02-20 Denso Corp 半導体装置の製造方法
KR20150125937A (ko) * 2013-03-04 2015-11-10 닛토덴코 가부시키가이샤 반도체 장치의 제조 방법, 시트형 수지 조성물, 및 다이싱 테이프 일체형 시트형 수지 조성물
JP5731080B2 (ja) * 2013-03-28 2015-06-10 古河電気工業株式会社 粘着テープおよびウエハ加工用テープ
CN104979187A (zh) * 2014-04-02 2015-10-14 中芯国际集成电路制造(上海)有限公司 晶圆的分割方法
KR102341732B1 (ko) 2015-01-30 2021-12-23 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
US20190348747A1 (en) 2018-05-14 2019-11-14 Mediatek Inc. Innovative air gap for antenna fan out package
US11043730B2 (en) 2018-05-14 2021-06-22 Mediatek Inc. Fan-out package structure with integrated antenna
US11024954B2 (en) * 2018-05-14 2021-06-01 Mediatek Inc. Semiconductor package with antenna and fabrication method thereof
KR20230117446A (ko) * 2020-12-17 2023-08-08 이나리 테크놀로지 에스디엔 비에이치디 반도체 물품의 제조방법 및 그 시스템

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112345A (ja) * 1984-11-07 1986-05-30 Toshiba Corp 半導体装置の製造方法
JPS63148655A (ja) * 1986-12-12 1988-06-21 Nec Corp 半導体素子の製造方法
JPS63164336A (ja) * 1986-12-26 1988-07-07 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH0715087B2 (ja) 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
US5762744A (en) * 1991-12-27 1998-06-09 Rohm Co., Ltd. Method of producing a semiconductor device using an expand tape
JPH05335411A (ja) 1992-06-02 1993-12-17 Toshiba Corp ペレットの製造方法
JP3483161B2 (ja) 1994-08-11 2004-01-06 リンテック株式会社 粘接着テープおよびその使用方法
JPH08239639A (ja) 1995-03-02 1996-09-17 Sekisui Chem Co Ltd 粘着剤組成物及びそれを用いた粘着加工品
JPH0967558A (ja) 1995-08-31 1997-03-11 Lintec Corp ウェハダイシング・接着用シート
JPH09100450A (ja) 1995-10-03 1997-04-15 Lintec Corp 粘接着テープおよびその使用方法
JP4094080B2 (ja) 1995-11-22 2008-06-04 リンテック株式会社 接着剤組成物および接着シート
CN1157310A (zh) 1995-11-22 1997-08-20 琳得科株式会社 粘合剂组合物和粘合片
JPH09213662A (ja) 1996-01-31 1997-08-15 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
US6083811A (en) * 1996-02-07 2000-07-04 Northrop Grumman Corporation Method for producing thin dice from fragile materials
JPH10231602A (ja) 1997-02-19 1998-09-02 Dantani Plywood Co Ltd 補強材埋め込み型木製手摺り
JPH10337823A (ja) * 1997-04-11 1998-12-22 Lintec Corp 基材および該基材を用いた粘着テープ
JPH1140520A (ja) * 1997-07-23 1999-02-12 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
EP1038315A4 (de) * 1997-11-11 2001-07-11 Irvine Sensors Corp Verfahren zur verminderung der dicke von schaltungen enthaltenden halbleiterscheiben und dadurch hergestellte scheiben
DE19811115A1 (de) * 1998-03-14 1999-09-16 Stromberg Michael Verfahren zur Behandlung von Wafern beim Dünnen und Sägen
JPH11305673A (ja) 1998-04-17 1999-11-05 Nippon Columbia Co Ltd 表示装置
JP3410371B2 (ja) 1998-08-18 2003-05-26 リンテック株式会社 ウエハ裏面研削時の表面保護シートおよびその利用方法
KR100452661B1 (ko) 1999-02-03 2004-10-14 가부시끼가이샤 도시바 웨이퍼의 분할 방법 및 반도체 장치의 제조 방법
JP2000195826A (ja) * 2000-01-01 2000-07-14 Toshiba Corp ウェ―ハの分割方法及び半導体装置の製造方法
JP3906962B2 (ja) * 2000-08-31 2007-04-18 リンテック株式会社 半導体装置の製造方法

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MY125340A (en) 2006-07-31
CN1168132C (zh) 2004-09-22
US6656819B1 (en) 2003-12-02
HK1035261A1 (en) 2001-11-16
EP1107299A3 (de) 2004-06-16
TW487981B (en) 2002-05-21
SG90205A1 (en) 2002-07-23
KR100655035B1 (ko) 2006-12-07
DE60028912T2 (de) 2007-02-15
KR20010051970A (ko) 2001-06-25
EP1107299B1 (de) 2006-06-21
CN1298204A (zh) 2001-06-06

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