DE60045735D1 - Verfahren zur herstellung von silizium epitaktischem wafer - Google Patents

Verfahren zur herstellung von silizium epitaktischem wafer

Info

Publication number
DE60045735D1
DE60045735D1 DE60045735T DE60045735T DE60045735D1 DE 60045735 D1 DE60045735 D1 DE 60045735D1 DE 60045735 T DE60045735 T DE 60045735T DE 60045735 T DE60045735 T DE 60045735T DE 60045735 D1 DE60045735 D1 DE 60045735D1
Authority
DE
Germany
Prior art keywords
epitactic
wafer
producing silicon
silicon
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045735T
Other languages
English (en)
Inventor
Akihiro Kimura
Hideki Sato
Ryuji Kono
Masahiro Kato
Masaro Tamatsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60045735D1 publication Critical patent/DE60045735D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE60045735T 1999-11-25 2000-11-21 Verfahren zur herstellung von silizium epitaktischem wafer Expired - Lifetime DE60045735D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33404099A JP3601383B2 (ja) 1999-11-25 1999-11-25 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
PCT/JP2000/008204 WO2001038611A1 (fr) 1999-11-25 2000-11-21 Plaquette de silicium pour plaquette epitaxiee, plaquette epitaxiee, et procede de fabrication correspondant

Publications (1)

Publication Number Publication Date
DE60045735D1 true DE60045735D1 (de) 2011-04-28

Family

ID=18272845

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045735T Expired - Lifetime DE60045735D1 (de) 1999-11-25 2000-11-21 Verfahren zur herstellung von silizium epitaktischem wafer

Country Status (7)

Country Link
US (1) US6626994B1 (de)
EP (1) EP1154048B1 (de)
JP (1) JP3601383B2 (de)
KR (1) KR100741540B1 (de)
DE (1) DE60045735D1 (de)
TW (1) TW524898B (de)
WO (1) WO2001038611A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10066106B4 (de) * 2000-09-25 2008-11-27 Mitsubishi Materials Silicon Corp. Verfahren zur Wärmebehandlung eines Siliciumwafers
JP4549589B2 (ja) 2001-09-14 2010-09-22 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
TWI303282B (en) * 2001-12-26 2008-11-21 Sumco Techxiv Corp Method for eliminating defects from single crystal silicon, and single crystal silicon
JP4196602B2 (ja) * 2002-07-12 2008-12-17 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
JP4376505B2 (ja) * 2002-10-30 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US7084048B2 (en) * 2004-05-07 2006-08-01 Memc Electronic Materials, Inc. Process for metallic contamination reduction in silicon wafers
US7837711B2 (en) 2006-01-27 2010-11-23 Warsaw Orthopedic, Inc. Artificial spinous process for the sacrum and methods of use
US8262698B2 (en) * 2006-03-16 2012-09-11 Warsaw Orthopedic, Inc. Expandable device for insertion between anatomical structures and a procedure utilizing same
JP2010153631A (ja) * 2008-12-25 2010-07-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルシリコンウェーハとその製造方法
JP5346744B2 (ja) 2008-12-26 2013-11-20 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
TWI428481B (zh) 2009-12-29 2014-03-01 Siltronic Ag 矽晶圓及其製造方法
DE102011000973A1 (de) * 2011-02-28 2012-08-30 Schott Solar Ag Verfahren zur flächigen Gasphasenbehandlng von Halbleiterbauelementen
JP5720550B2 (ja) * 2011-12-05 2015-05-20 信越半導体株式会社 エピタキシャルウエーハの欠陥評価方法
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
US11715639B2 (en) * 2016-11-29 2023-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabrication method therefor
US10867791B2 (en) * 2017-04-06 2020-12-15 Sumco Corporation Method for manufacturing epitaxial silicon wafer and epitaxial silicon wafer
US20240071775A1 (en) * 2022-08-24 2024-02-29 Semiconductor Components Industries, Llc Methods of manufacturing semiconductor devices semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3763630B2 (ja) * 1997-01-24 2006-04-05 株式会社Ｓｕｍｃｏ 薄膜エピタキシャルウェーハおよびその製造方法
JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
JP3899725B2 (ja) * 1998-09-30 2007-03-28 株式会社Ｓｕｍｃｏ 単結晶体の欠陥除去方法
JP4038910B2 (ja) 1999-01-08 2008-01-30 株式会社Ｓｕｍｃｏ 半導体シリコンウェーハの製造方法

Also Published As

Publication number Publication date
EP1154048B1 (de) 2011-03-16
KR100741540B1 (ko) 2007-07-20
JP2001151596A (ja) 2001-06-05
WO2001038611A1 (fr) 2001-05-31
EP1154048A4 (de) 2004-05-12
TW524898B (en) 2003-03-21
EP1154048A1 (de) 2001-11-14
KR20010101656A (ko) 2001-11-14
JP3601383B2 (ja) 2004-12-15
US6626994B1 (en) 2003-09-30

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