DE60142201D1 - Verfahren zur Herstellung von einkristallinem Siliziumkarbid - Google Patents

Verfahren zur Herstellung von einkristallinem Siliziumkarbid

Info

Publication number
DE60142201D1
DE60142201D1 DE60142201T DE60142201T DE60142201D1 DE 60142201 D1 DE60142201 D1 DE 60142201D1 DE 60142201 T DE60142201 T DE 60142201T DE 60142201 T DE60142201 T DE 60142201T DE 60142201 D1 DE60142201 D1 DE 60142201D1
Authority
DE
Germany
Prior art keywords
silicon carbide
monocrystalline silicon
producing monocrystalline
producing
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142201T
Other languages
English (en)
Inventor
Yoshimitsu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE60142201D1 publication Critical patent/DE60142201D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE60142201T 2000-02-23 2001-02-22 Verfahren zur Herstellung von einkristallinem Siliziumkarbid Expired - Lifetime DE60142201D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000045571A JP3505597B2 (ja) 2000-02-23 2000-02-23 炭化珪素単結晶

Publications (1)

Publication Number Publication Date
DE60142201D1 true DE60142201D1 (de) 2010-07-08

Family

ID=18568130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142201T Expired - Lifetime DE60142201D1 (de) 2000-02-23 2001-02-22 Verfahren zur Herstellung von einkristallinem Siliziumkarbid

Country Status (4)

Country Link
US (1) US6458207B1 (de)
EP (1) EP1132505B1 (de)
JP (1) JP3505597B2 (de)
DE (1) DE60142201D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008001569A (ja) * 2006-06-23 2008-01-10 Shin Etsu Chem Co Ltd 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置
JP2008037720A (ja) * 2006-08-09 2008-02-21 Shin Etsu Chem Co Ltd 単結晶ＳｉＣ製造用原料、その製造方法、この原料を用いた単結晶ＳｉＣの製造方法、及び、その製造方法により得られる単結晶ＳｉＣ
JP2008037715A (ja) * 2006-08-09 2008-02-21 Shin Etsu Chem Co Ltd 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置
KR100769695B1 (ko) 2006-08-10 2007-10-23 한양대학교 산학협력단 단결정 탄화규소 나노선, 이의 제조방법 및 이를 포함하는필터
JP2008037729A (ja) * 2006-08-10 2008-02-21 Shin Etsu Chem Co Ltd 単結晶炭化珪素及びその製造方法
JP4347325B2 (ja) * 2006-08-10 2009-10-21 信越化学工業株式会社 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置
JP2008050174A (ja) * 2006-08-22 2008-03-06 Shin Etsu Chem Co Ltd 単結晶ＳｉＣ及びその製造方法
JP2008115045A (ja) * 2006-11-06 2008-05-22 Shin Etsu Chem Co Ltd 単結晶ＳｉＣ及びその製造方法
JP5488947B2 (ja) * 2007-09-10 2014-05-14 有限会社Ｃｐｄ技術研究所 超微粒子原料を用いる窒化アルミニウム単結晶の育成法
WO2013073534A1 (ja) * 2011-11-17 2013-05-23 イビデン株式会社 炭化珪素単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof

Also Published As

Publication number Publication date
US6458207B1 (en) 2002-10-01
JP3505597B2 (ja) 2004-03-08
EP1132505B1 (de) 2010-05-26
US20020020342A1 (en) 2002-02-21
JP2001233697A (ja) 2001-08-28
EP1132505A3 (de) 2004-10-06
EP1132505A2 (de) 2001-09-12

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