DE60138443D1 - Verfahren zur herstellung von siliziumeinkristallen - Google Patents

Verfahren zur herstellung von siliziumeinkristallen

Info

Publication number
DE60138443D1
DE60138443D1 DE60138443T DE60138443T DE60138443D1 DE 60138443 D1 DE60138443 D1 DE 60138443D1 DE 60138443 T DE60138443 T DE 60138443T DE 60138443 T DE60138443 T DE 60138443T DE 60138443 D1 DE60138443 D1 DE 60138443D1
Authority
DE
Germany
Prior art keywords
producing silicon
silicon ingredients
ingredients
producing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138443T
Other languages
English (en)
Inventor
Koji Kitagawa
Susumu Sonokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60138443D1 publication Critical patent/DE60138443D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60138443T 2000-02-25 2001-02-21 Verfahren zur herstellung von siliziumeinkristallen Expired - Lifetime DE60138443D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000049553 2000-02-25
PCT/JP2001/001224 WO2001063026A1 (fr) 2000-02-25 2001-02-21 Procede de production de monocristal de silicium

Publications (1)

Publication Number Publication Date
DE60138443D1 true DE60138443D1 (de) 2009-06-04

Family

ID=18571477

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138443T Expired - Lifetime DE60138443D1 (de) 2000-02-25 2001-02-21 Verfahren zur herstellung von siliziumeinkristallen

Country Status (7)

Country Link
US (1) US6506251B1 (de)
EP (1) EP1193332B1 (de)
JP (1) JP4165068B2 (de)
KR (1) KR100799362B1 (de)
DE (1) DE60138443D1 (de)
TW (1) TW546426B (de)
WO (1) WO2001063026A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003192488A (ja) 2001-12-20 2003-07-09 Wacker Nsce Corp シリコン単結晶製造用種結晶及びシリコン単結晶の製造方法
CN1323196C (zh) * 2002-04-24 2007-06-27 信越半导体株式会社 单晶硅的制造方法及单晶硅以及硅晶片
JP2007223814A (ja) * 2004-02-09 2007-09-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶半導体の製造方法
US7396406B2 (en) 2004-02-09 2008-07-08 Sumco Techxiv Corporation Single crystal semiconductor manufacturing apparatus and method
US7780938B2 (en) * 2006-04-13 2010-08-24 Cabot Corporation Production of silicon through a closed-loop process
CN101148777B (zh) * 2007-07-19 2011-03-23 任丙彦 直拉法生长掺镓硅单晶的方法和装置
JP5083001B2 (ja) * 2008-04-08 2012-11-28 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法
JP4862884B2 (ja) * 2008-05-21 2012-01-25 信越半導体株式会社 シリコン単結晶の製造方法
JP5125983B2 (ja) * 2008-10-20 2013-01-23 信越半導体株式会社 シリコン単結晶の製造方法
KR101022918B1 (ko) 2009-02-18 2011-03-16 주식회사 엘지실트론 무네킹 공정을 이용한 단결정 제조 방법
JP5491483B2 (ja) * 2011-11-15 2014-05-14 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP5660020B2 (ja) 2011-12-16 2015-01-28 信越半導体株式会社 シリコン単結晶の製造方法
JP5805527B2 (ja) * 2011-12-28 2015-11-04 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
JP5756075B2 (ja) 2012-11-07 2015-07-29 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の育成方法
CN112567006A (zh) * 2019-08-21 2021-03-26 眉山博雅新材料有限公司 无需退火的氧化物晶体生长方法及设备
CN115110146A (zh) * 2022-06-30 2022-09-27 西安奕斯伟材料科技有限公司 籽晶及拉晶方法、装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104988A (ja) 1990-08-20 1992-04-07 Fujitsu Ltd 単結晶成長方法
JPH04139092A (ja) 1990-09-28 1992-05-13 Fujitsu Ltd シリコン単結晶の製造方法と種結晶
JP2937115B2 (ja) * 1996-03-15 1999-08-23 住友金属工業株式会社 単結晶引き上げ方法
JP3387364B2 (ja) 1997-05-21 2003-03-17 信越半導体株式会社 シリコン種結晶およびその製造方法、並びにこれらの種結晶を用いてシリコン単結晶を製造する方法
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
US5932002A (en) * 1997-08-28 1999-08-03 Sumitomo Sitix Corporation Seed crystals for pulling a single crystal and methods using the same
JP3267225B2 (ja) * 1997-12-26 2002-03-18 住友金属工業株式会社 単結晶引き上げ方法、及び単結晶引き上げ装置
JP3402210B2 (ja) * 1997-12-27 2003-05-06 信越半導体株式会社 シリコン単結晶の製造方法
JP3440819B2 (ja) 1998-04-07 2003-08-25 信越半導体株式会社 シリコン単結晶の製造方法
JP3065076B1 (ja) * 1999-05-13 2000-07-12 住友金属工業株式会社 単結晶引き上げ方法及び単結晶引き上げ装置

Also Published As

Publication number Publication date
US6506251B1 (en) 2003-01-14
KR100799362B1 (ko) 2008-01-30
EP1193332A1 (de) 2002-04-03
EP1193332B1 (de) 2009-04-22
TW546426B (en) 2003-08-11
JP4165068B2 (ja) 2008-10-15
KR20020006710A (ko) 2002-01-24
EP1193332A4 (de) 2007-10-31
WO2001063026A1 (fr) 2001-08-30

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Legal Events

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