CN112567006A - 无需退火的氧化物晶体生长方法及设备 - Google Patents

无需退火的氧化物晶体生长方法及设备 Download PDF

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CN112567006A
CN112567006A CN201980051053.7A CN201980051053A CN112567006A CN 112567006 A CN112567006 A CN 112567006A CN 201980051053 A CN201980051053 A CN 201980051053A CN 112567006 A CN112567006 A CN 112567006A
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crystal
temperature
crystal growth
reaction
crucible
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王宇
官伟明
李敏
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Meishan Boya New Materials Co ltd
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Priority to CN202110318110.2A priority patent/CN113073387A/zh
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/10—Compounds containing silicon, fluorine, and other elements
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants

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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种无需退火的氧化物晶体生长方法，通过对反应物料进行重量补偿、通入流动气体、在降温过程中加大氧含量占比、在采用的温场装置中设置加热体，以及对工艺参数的优化，可以在一定程度上抑制晶体生长过程中的组分偏离、开裂以及形成氧缺位等问题。

Description

PCT国内申请，说明书已公开。

Claims (41)

  1. PCT国内申请，权利要求书已公开。
CN201980051053.7A 2019-08-21 2019-08-21 无需退火的氧化物晶体生长方法及设备 Pending CN112567006A (zh)

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CN202110318220.9A CN113073388A (zh) 2019-08-21 2019-08-21 一种晶体
CN202110318110.2A CN113073387A (zh) 2019-08-21 2019-08-21 无需退火的氧化物晶体生长方法及设备

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PCT/CN2019/101693 WO2021031141A1 (zh) 2019-08-21 2019-08-21 无需退火的氧化物晶体生长方法及设备

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CN202110318220.9A Division CN113073388A (zh) 2019-08-21 2019-08-21 一种晶体

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112723749A (zh) * 2021-03-03 2021-04-30 哈尔滨工程大学 一种含有闪烁纳米晶体的高透明微晶玻璃及制备方法
CN113176604A (zh) * 2021-04-30 2021-07-27 中国电子科技集团公司第二十六研究所 一种闪烁晶体阵列抗辐照加固结构及抗辐照加固方法

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CN113061975A (zh) 2020-06-05 2021-07-02 眉山博雅新材料有限公司 一种用于生长晶体的设备
CN111424318B (zh) 2020-06-10 2020-10-16 眉山博雅新材料有限公司 一种用于制备掺杂yag单晶光纤的方法
CN113970940B (zh) * 2021-10-20 2022-07-22 南京航空航天大学 一种控制材料内部温度场的方法

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CN112723749A (zh) * 2021-03-03 2021-04-30 哈尔滨工程大学 一种含有闪烁纳米晶体的高透明微晶玻璃及制备方法
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CN113176604A (zh) * 2021-04-30 2021-07-27 中国电子科技集团公司第二十六研究所 一种闪烁晶体阵列抗辐照加固结构及抗辐照加固方法

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CN113073388A (zh) 2021-07-06
US20210180209A1 (en) 2021-06-17
US20210180210A1 (en) 2021-06-17
US20240052523A1 (en) 2024-02-15
CN113073387A (zh) 2021-07-06
EP3985082A4 (en) 2023-02-15
US11828001B2 (en) 2023-11-28
WO2021031141A1 (zh) 2021-02-25
US11319645B2 (en) 2022-05-03
EP3985082A1 (en) 2022-04-20

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