DE60015228D1 - Verfahren zur Herstellung von kristallinem Silizium - Google Patents

Verfahren zur Herstellung von kristallinem Silizium

Info

Publication number
DE60015228D1
DE60015228D1 DE60015228T DE60015228T DE60015228D1 DE 60015228 D1 DE60015228 D1 DE 60015228D1 DE 60015228 T DE60015228 T DE 60015228T DE 60015228 T DE60015228 T DE 60015228T DE 60015228 D1 DE60015228 D1 DE 60015228D1
Authority
DE
Germany
Prior art keywords
production
crystalline silicon
crystalline
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60015228T
Other languages
English (en)
Other versions
DE60015228T2 (de
Inventor
Saburo Wakita
Yoshinobu Nakada
Junichi Sasaki
Yuji Ishiwari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE60015228D1 publication Critical patent/DE60015228D1/de
Publication of DE60015228T2 publication Critical patent/DE60015228T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE60015228T 1999-04-30 2000-03-21 Verfahren zur Herstellung von kristallinem Silizium Expired - Lifetime DE60015228T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12533999 1999-04-30
JP12533999 1999-04-30
JP2000054820 2000-02-29
JP2000054820A JP3885452B2 (ja) 1999-04-30 2000-02-29 結晶シリコンの製造方法

Publications (2)

Publication Number Publication Date
DE60015228D1 true DE60015228D1 (de) 2004-12-02
DE60015228T2 DE60015228T2 (de) 2005-03-10

Family

ID=26461798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60015228T Expired - Lifetime DE60015228T2 (de) 1999-04-30 2000-03-21 Verfahren zur Herstellung von kristallinem Silizium

Country Status (4)

Country Link
US (2) US6383285B1 (de)
EP (1) EP1048758B1 (de)
JP (1) JP3885452B2 (de)
DE (1) DE60015228T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4953522B2 (ja) * 2001-06-21 2012-06-13 シャープ株式会社 溶融シリコンの精製方法および溶融シリコン精製装置
JP4357810B2 (ja) * 2002-07-25 2009-11-04 三菱マテリアル株式会社 鋳造装置及び鋳造方法
JP4777880B2 (ja) 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
US8268074B2 (en) * 2005-02-03 2012-09-18 Rec Scan Wafer As Method and device for producing oriented solidified blocks made of semi-conductor material
DE102005013410B4 (de) * 2005-03-23 2008-01-31 Deutsche Solar Ag Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen
WO2007010622A1 (ja) * 2005-07-22 2007-01-25 Kyocera Corporation 多結晶シリコン基板及びその製造方法、並びに光電変換素子及び光電変換モジュール
TW200726812A (en) * 2005-11-25 2007-07-16 Hitachi Chemical Co Ltd Liquid resin composition for electronic components and electronic components device
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置
KR100853019B1 (ko) 2007-01-19 2008-08-19 주식회사 글로실 태양전지용 다결정 실리콘 주괴 제조 방법
US20080178793A1 (en) * 2007-01-31 2008-07-31 Calisolar, Inc. Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
CN101755075A (zh) * 2007-07-20 2010-06-23 Bp北美公司 从籽晶制造浇铸硅的方法和装置
TW200930850A (en) * 2008-01-03 2009-07-16 Green Energy Technology Inc Cooling structure for body of crystal growth furnace
DE112008003810A5 (de) * 2008-02-14 2011-01-20 Deutsche Solar Ag Vorrichtung und Verfahren zur Herstellung von kristallinen Körpern durch gerichtete Erstarrung
EP2334847B1 (de) 2008-09-19 2013-06-19 MEMC Singapore Pte. Ltd. Direktionaler erstarrungsofen und verfahren für verringerte schmelzekontaminierung und verringerte waferkontaminierung
EP2492242A4 (de) 2009-10-19 2015-07-22 Jx Nippon Mining & Metals Corp Ofen zum schmelzen von silicium oder siliciumlegierungen
JP5371701B2 (ja) * 2009-11-04 2013-12-18 三菱マテリアルテクノ株式会社 多結晶シリコンインゴットの製造装置及び多結晶シリコンインゴットの製造方法
JP5606976B2 (ja) * 2011-03-25 2014-10-15 三菱マテリアル株式会社 シリコンインゴット製造装置、シリコンインゴットの製造方法
JP6064596B2 (ja) * 2012-02-28 2017-01-25 三菱マテリアル株式会社 鋳造装置及び鋳造方法
KR101964999B1 (ko) * 2012-02-28 2019-04-02 미쓰비시 마테리알 가부시키가이샤 주조 장치 및 주조 방법
JP5979664B2 (ja) * 2012-07-30 2016-08-24 国立研究開発法人物質・材料研究機構 シリコン結晶鋳造炉
FR3010092B1 (fr) 2013-09-02 2017-05-26 Commissariat Energie Atomique Procede et dispositif de traitement de la surface libre d'un materiau
US11329284B2 (en) 2016-05-20 2022-05-10 Nano One Materials Corporation Fine and ultrafine powders and nanopowders of lithium metal oxides for battery applications
WO2021031140A1 (zh) * 2019-08-21 2021-02-25 眉山博雅新材料有限公司 开放式温场

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619611B2 (ja) * 1993-05-31 1997-06-11 住友シチックス株式会社 単結晶の製造装置および製造方法
DE19607098C2 (de) * 1996-02-24 1999-06-17 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
WO1998016466A1 (fr) * 1996-10-14 1998-04-23 Kawasaki Steel Corporation Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
JPH10182135A (ja) * 1996-12-20 1998-07-07 Kawasaki Steel Corp シリコンの凝固精製方法
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置

Also Published As

Publication number Publication date
DE60015228T2 (de) 2005-03-10
EP1048758A1 (de) 2000-11-02
JP2001010810A (ja) 2001-01-16
US6383285B1 (en) 2002-05-07
US6540828B2 (en) 2003-04-01
JP3885452B2 (ja) 2007-02-21
US20020139297A1 (en) 2002-10-03
EP1048758B1 (de) 2004-10-27

Similar Documents

Publication Publication Date Title
DE60015228D1 (de) Verfahren zur Herstellung von kristallinem Silizium
DE60043983D1 (de) Verfahren zur herstellung von phenylalkanen
DE50000852D1 (de) Verfahren zur Herstellung von Aminen
DE60141268D1 (de) Verfahren zur Herstellung von Siliziumkarbid Einkristallen
DE60008315D1 (de) Verfahren zur Herstellung von Methylchlorid
AT7109U3 (de) Verfahren zur herstellung von amlodipinmaleat
DE60208562D1 (de) Verfahren zur herstellung von tagatose
DE60024210D1 (de) Verfahren zur Herstellung von Zahnrädern
DE60019747D1 (de) Verfahren zur herstellung von fluorolefinen
DE60026607D1 (de) Verfahren zur herstellung von perfluoroalkadienen
DE60008830D1 (de) Verfahren zur Herstellung von keramischen Zusammensetzungen
ATA218299A (de) Verfahren zur herstellung von oxindolen
DE60024372D1 (de) Verfahren zur Herstellung von Tetraorganooxysilanen
DE60019606D1 (de) Verfahren zur herstellung von substituierten pyrimidinen
DE60039688D1 (de) Verfahren zur herstellung von uhrarmbandteilen
DE69916332D1 (de) Verfahren zur herstellung von etheraminalkoxylaten
DE59900393D1 (de) Verfahren zur Herstellung von Organochlorsilanen
DE60131562D1 (de) Verfahren zur herstellung von benztriazolen
DE50010478D1 (de) Verfahren zur herstellung von polyamiden
DE60031231D1 (de) Verfahren zur Herstellung von 2-Alkyl-4-Isothiazolin-3-onen
DE50000038D1 (de) Verfahren zur Herstellung von Organochlorsilanen
DE60004119D1 (de) Verfahren zur Herstellung von Pentaacetyl-beta-D-Glucopyranose
DE50000040D1 (de) Verfahren zur Herstellung von Organochlorsilanen
DE10082578D2 (de) Verfahren zur Herstellung von regelmäßigen Nanostrukturen
DE59909775D1 (de) Verfahren zur Herstellung von Sechsring-Carbocyclen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition