DE60141268D1 - Verfahren zur Herstellung von Siliziumkarbid Einkristallen - Google Patents

Verfahren zur Herstellung von Siliziumkarbid Einkristallen

Info

Publication number
DE60141268D1
DE60141268D1 DE60141268T DE60141268T DE60141268D1 DE 60141268 D1 DE60141268 D1 DE 60141268D1 DE 60141268 T DE60141268 T DE 60141268T DE 60141268 T DE60141268 T DE 60141268T DE 60141268 D1 DE60141268 D1 DE 60141268D1
Authority
DE
Germany
Prior art keywords
production
silicon carbide
single crystals
carbide single
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141268T
Other languages
English (en)
Inventor
Masami Naito
Kazukuni Hara
Fusao Hirose
Shoichi Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Application granted granted Critical
Publication of DE60141268D1 publication Critical patent/DE60141268D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
DE60141268T 2000-12-12 2001-12-12 Verfahren zur Herstellung von Siliziumkarbid Einkristallen Expired - Lifetime DE60141268D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000377485A JP4716558B2 (ja) 2000-12-12 2000-12-12 炭化珪素基板

Publications (1)

Publication Number Publication Date
DE60141268D1 true DE60141268D1 (de) 2010-03-25

Family

ID=18846200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60141268T Expired - Lifetime DE60141268D1 (de) 2000-12-12 2001-12-12 Verfahren zur Herstellung von Siliziumkarbid Einkristallen

Country Status (4)

Country Link
US (2) US6746787B2 (de)
EP (1) EP1215311B1 (de)
JP (1) JP4716558B2 (de)
DE (1) DE60141268D1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4716558B2 (ja) * 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
DE10211312A1 (de) * 2002-03-14 2003-10-02 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur epitaktischen Beschichtung einer Halbleiterscheibe sowie epitaktisch beschichtete Halbleiterscheibe
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
JP4150642B2 (ja) * 2003-08-04 2008-09-17 株式会社デンソー 単結晶の成長方法および成長装置
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP4874527B2 (ja) 2004-04-01 2012-02-15 トヨタ自動車株式会社 炭化珪素半導体基板及びその製造方法
JP4976647B2 (ja) * 2004-07-29 2012-07-18 富士電機株式会社 炭化珪素半導体基板の製造方法
JP5224256B2 (ja) * 2005-06-02 2013-07-03 学校法人関西学院 単結晶炭化ケイ素基板の処理方法、半導体素子の製造方法
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
JP5087238B2 (ja) * 2006-06-22 2012-12-05 株式会社ニューフレアテクノロジー 半導体製造装置の保守方法及び半導体製造方法
JP2008001569A (ja) * 2006-06-23 2008-01-10 Shin Etsu Chem Co Ltd 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置
JP2009544849A (ja) * 2006-07-27 2009-12-17 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜形成装置のクリーニング方法および膜形成装置
US8197596B2 (en) * 2006-07-28 2012-06-12 Pronomic Industry Ab Crystal growth method and reactor design
JP5045272B2 (ja) * 2007-07-03 2012-10-10 富士電機株式会社 単結晶炭化珪素基板の製造方法
JP4827829B2 (ja) * 2007-12-18 2011-11-30 三菱電機株式会社 炭化珪素半導体基板の製造方法および炭化珪素半導体装置の製造方法
JP5360639B2 (ja) * 2008-02-05 2013-12-04 学校法人関西学院 表面改質単結晶ＳｉＣ基板、エピ成長層付き単結晶ＳｉＣ基板、半導体チップ、単結晶ＳｉＣ成長用種基板及び単結晶成長層付き多結晶ＳｉＣ基板の製造方法
JP2009256159A (ja) * 2008-04-14 2009-11-05 Incubation Alliance Inc 結晶炭化珪素基板の製造方法
JP4978637B2 (ja) * 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
CN102427971B (zh) * 2009-04-14 2015-01-07 速力斯公司 高效外延化学气相沉积(cvd)反应器
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
JP2011077502A (ja) * 2009-09-04 2011-04-14 Hitachi Kokusai Electric Inc 熱処理装置
WO2011092893A1 (ja) * 2010-01-26 2011-08-04 住友電気工業株式会社 炭化珪素基板の製造方法
EP2532773A4 (de) * 2010-02-05 2013-12-11 Sumitomo Electric Industries Verfahren zur herstellung eines siliciumcarbidsubstrats
JP5481224B2 (ja) * 2010-02-19 2014-04-23 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
JP5573725B2 (ja) * 2011-02-21 2014-08-20 セイコーエプソン株式会社 立方晶炭化珪素半導体基板の製造方法
TW201427052A (zh) * 2012-11-05 2014-07-01 Nusola Inc 寬能隙光伏裝置及其製造方法
CN110476223B (zh) * 2017-04-04 2023-05-30 三菱电机株式会社 碳化硅外延晶片的制造方法及碳化硅半导体装置的制造方法
CN110331437B (zh) * 2019-07-11 2020-04-24 浙江博蓝特半导体科技股份有限公司 碳化硅单晶生长装置及制造碳化硅单晶的方法
CN111172586A (zh) * 2020-01-03 2020-05-19 北京北方华创微电子装备有限公司 外延反应腔室

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
JPH07131067A (ja) * 1993-11-08 1995-05-19 Sanyo Electric Co Ltd 炭化ケイ素ウエハの製造方法及び炭化ケイ素発光ダイオード素子の製造方法
US5679153A (en) 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JPH1036194A (ja) * 1996-07-23 1998-02-10 Hitachi Ltd 炭化ケイ素の気相結晶成長装置
JPH10125905A (ja) * 1996-10-17 1998-05-15 Denso Corp 半導体基板および半導体基板のそり矯正方法
JPH10261615A (ja) * 1997-03-17 1998-09-29 Fuji Electric Co Ltd ＳｉＣ半導体の表面モホロジー制御方法およびＳｉＣ半導体薄膜の成長方法
JP3296998B2 (ja) 1997-05-23 2002-07-02 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
CA2263339C (en) 1997-06-27 2002-07-23 Kichiya Tanino Single crystal sic and process for preparing the same
JPH11162850A (ja) * 1997-08-27 1999-06-18 Matsushita Electric Ind Co Ltd 炭化珪素基板およびその製造方法、並びに炭化珪素基板を用いた半導体素子
JP3043690B2 (ja) * 1997-11-17 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
JP3508519B2 (ja) * 1997-11-28 2004-03-22 松下電器産業株式会社 エピタキシャル成長装置およびエピタキシャル成長法
JP2884085B1 (ja) * 1998-04-13 1999-04-19 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
EP0967304B1 (de) * 1998-05-29 2004-04-07 Denso Corporation Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
JP3414321B2 (ja) * 1998-05-29 2003-06-09 株式会社デンソー 炭化珪素単結晶の製造方法
JPH11354789A (ja) * 1998-06-12 1999-12-24 Nissan Motor Co Ltd 電界効果トランジスタ
JP2000026199A (ja) * 1998-07-09 2000-01-25 Denso Corp 炭化珪素単結晶の製造方法および炭化珪素単結晶
JP2917149B1 (ja) 1998-07-13 1999-07-12 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
JP2000044397A (ja) * 1998-07-31 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法
JP3248071B2 (ja) * 1998-10-08 2002-01-21 日本ピラー工業株式会社 単結晶ＳｉＣ
JP3043744B1 (ja) * 1999-03-17 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣの育成方法
JP3443379B2 (ja) * 1999-03-23 2003-09-02 松下電器産業株式会社 半導体膜の成長方法及び半導体装置の製造方法
WO2001018286A1 (fr) * 1999-09-06 2001-03-15 Sixon Inc. Monocristal sic et son procede de tirage
JP4716558B2 (ja) * 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
US6780243B1 (en) * 2001-11-01 2004-08-24 Dow Corning Enterprises, Inc. Method of silicon carbide monocrystalline boule growth

Also Published As

Publication number Publication date
JP4716558B2 (ja) 2011-07-06
US6746787B2 (en) 2004-06-08
EP1215311B1 (de) 2010-02-10
US7147714B2 (en) 2006-12-12
EP1215311A3 (de) 2006-08-02
EP1215311A2 (de) 2002-06-19
US20040194693A1 (en) 2004-10-07
US20020069818A1 (en) 2002-06-13
JP2002179498A (ja) 2002-06-26

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