DE60134581D1 - Verfahren zur Herstellung von Siliziumkarbideinkristall - Google Patents
Verfahren zur Herstellung von SiliziumkarbideinkristallInfo
- Publication number
- DE60134581D1 DE60134581D1 DE60134581T DE60134581T DE60134581D1 DE 60134581 D1 DE60134581 D1 DE 60134581D1 DE 60134581 T DE60134581 T DE 60134581T DE 60134581 T DE60134581 T DE 60134581T DE 60134581 D1 DE60134581 D1 DE 60134581D1
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- silicon carbide
- carbide single
- producing silicon
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000106292 | 2000-04-07 | ||
JP2000365443 | 2000-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60134581D1 true DE60134581D1 (de) | 2008-08-07 |
Family
ID=26589669
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60105218T Expired - Lifetime DE60105218T2 (de) | 2000-04-07 | 2001-04-06 | Siliciumkarbid und Verfahren zu seiner Herstellung |
DE60134581T Expired - Lifetime DE60134581D1 (de) | 2000-04-07 | 2001-04-06 | Verfahren zur Herstellung von Siliziumkarbideinkristall |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60105218T Expired - Lifetime DE60105218T2 (de) | 2000-04-07 | 2001-04-06 | Siliciumkarbid und Verfahren zu seiner Herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US6596080B2 (de) |
EP (2) | EP1439246B1 (de) |
DE (2) | DE60105218T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3761418B2 (ja) | 2001-05-10 | 2006-03-29 | Hoya株式会社 | 化合物結晶およびその製造法 |
JP2003068654A (ja) | 2001-08-27 | 2003-03-07 | Hoya Corp | 化合物単結晶の製造方法 |
JP2003068655A (ja) * | 2001-08-27 | 2003-03-07 | Hoya Corp | 化合物単結晶の製造方法 |
JP2003095798A (ja) * | 2001-09-27 | 2003-04-03 | Hoya Corp | 単結晶基板の製造方法 |
FR2854641B1 (fr) | 2003-05-05 | 2005-08-05 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
US6972236B2 (en) * | 2004-01-30 | 2005-12-06 | Chartered Semiconductor Manufacturing Ltd. | Semiconductor device layout and channeling implant process |
DE102004010379A1 (de) * | 2004-03-03 | 2005-09-22 | Schott Ag | Verfahren zur Herstellung von Wafern mit defektarmen Oberflächen, die Verwendung solcher Wafer und damit erhaltene elektronische Bauteile |
DE102004035769A1 (de) * | 2004-07-27 | 2006-03-23 | Merck Patent Gmbh | Mehrschichtige Interferenzpigmente |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
JP4628189B2 (ja) * | 2005-06-07 | 2011-02-09 | Hoya株式会社 | 炭化珪素単結晶の製造方法 |
US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
JP2008311541A (ja) * | 2007-06-18 | 2008-12-25 | Fuji Electric Device Technology Co Ltd | 炭化珪素半導体基板の製造方法 |
JP5469840B2 (ja) * | 2008-09-30 | 2014-04-16 | 昭和電工株式会社 | 炭化珪素単結晶基板の製造方法 |
GB2484506A (en) * | 2010-10-13 | 2012-04-18 | Univ Warwick | Heterogrowth |
JP5961357B2 (ja) * | 2011-09-09 | 2016-08-02 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
WO2016067918A1 (ja) | 2014-10-31 | 2016-05-06 | 富士電機株式会社 | 炭化珪素エピタキシャル膜の成長方法 |
JP6865431B2 (ja) * | 2017-02-16 | 2021-04-28 | 国立大学法人埼玉大学 | エッチング方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122223A (en) | 1979-05-29 | 1992-06-16 | Massachusetts Institute Of Technology | Graphoepitaxy using energy beams |
JPS63270398A (ja) | 1987-04-24 | 1988-11-08 | Sharp Corp | 炭化珪素単結晶の成長方法 |
US4912064A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon |
US4946547A (en) * | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5230768A (en) * | 1990-03-26 | 1993-07-27 | Sharp Kabushiki Kaisha | Method for the production of SiC single crystals by using a specific substrate crystal orientation |
US5248385A (en) | 1991-06-12 | 1993-09-28 | The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers |
JP3111662B2 (ja) | 1992-07-27 | 2000-11-27 | 東レ株式会社 | 液晶ポリエステル樹脂組成物 |
US5501173A (en) | 1993-10-18 | 1996-03-26 | Westinghouse Electric Corporation | Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates |
DE4423068C1 (de) * | 1994-07-01 | 1995-08-17 | Daimler Benz Ag | Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung |
US5915194A (en) | 1997-07-03 | 1999-06-22 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
US6416578B1 (en) * | 1999-10-08 | 2002-07-09 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
JP3576432B2 (ja) | 1998-10-10 | 2004-10-13 | Hoya株式会社 | 炭化珪素膜及びその製造方法 |
-
2001
- 2001-04-06 EP EP04007217A patent/EP1439246B1/de not_active Expired - Lifetime
- 2001-04-06 EP EP01108736A patent/EP1143033B1/de not_active Expired - Lifetime
- 2001-04-06 DE DE60105218T patent/DE60105218T2/de not_active Expired - Lifetime
- 2001-04-06 US US09/827,178 patent/US6596080B2/en not_active Expired - Fee Related
- 2001-04-06 DE DE60134581T patent/DE60134581D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60105218D1 (de) | 2004-10-07 |
EP1439246B1 (de) | 2008-06-25 |
EP1143033A3 (de) | 2002-10-23 |
EP1439246A1 (de) | 2004-07-21 |
US20020014198A1 (en) | 2002-02-07 |
US6596080B2 (en) | 2003-07-22 |
EP1143033A2 (de) | 2001-10-10 |
EP1143033B1 (de) | 2004-09-01 |
DE60105218T2 (de) | 2005-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |