DE60105218D1 - Siliciumkarbid und Verfahren zu seiner Herstellung - Google Patents

Siliciumkarbid und Verfahren zu seiner Herstellung

Info

Publication number
DE60105218D1
DE60105218D1 DE60105218T DE60105218T DE60105218D1 DE 60105218 D1 DE60105218 D1 DE 60105218D1 DE 60105218 T DE60105218 T DE 60105218T DE 60105218 T DE60105218 T DE 60105218T DE 60105218 D1 DE60105218 D1 DE 60105218D1
Authority
DE
Germany
Prior art keywords
manufacture
silicon carbide
carbide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60105218T
Other languages
English (en)
Other versions
DE60105218T2 (de
Inventor
Takamitsu Kawahara
Hiroyuki Nagasawa
Kuniaki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE60105218D1 publication Critical patent/DE60105218D1/de
Application granted granted Critical
Publication of DE60105218T2 publication Critical patent/DE60105218T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60105218T 2000-04-07 2001-04-06 Siliciumkarbid und Verfahren zu seiner Herstellung Expired - Lifetime DE60105218T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000106292 2000-04-07
JP2000106292 2000-04-07
JP2000365443 2000-11-30
JP2000365443 2000-11-30

Publications (2)

Publication Number Publication Date
DE60105218D1 true DE60105218D1 (de) 2004-10-07
DE60105218T2 DE60105218T2 (de) 2005-08-04

Family

ID=26589669

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60105218T Expired - Lifetime DE60105218T2 (de) 2000-04-07 2001-04-06 Siliciumkarbid und Verfahren zu seiner Herstellung
DE60134581T Expired - Lifetime DE60134581D1 (de) 2000-04-07 2001-04-06 Verfahren zur Herstellung von Siliziumkarbideinkristall

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60134581T Expired - Lifetime DE60134581D1 (de) 2000-04-07 2001-04-06 Verfahren zur Herstellung von Siliziumkarbideinkristall

Country Status (3)

Country Link
US (1) US6596080B2 (de)
EP (2) EP1439246B1 (de)
DE (2) DE60105218T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761418B2 (ja) 2001-05-10 2006-03-29 Ｈｏｙａ株式会社 化合物結晶およびその製造法
JP2003068654A (ja) 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
JP2003068655A (ja) * 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
JP2003095798A (ja) * 2001-09-27 2003-04-03 Hoya Corp 単結晶基板の製造方法
FR2854641B1 (fr) 2003-05-05 2005-08-05 Centre Nat Rech Scient Procede de formation d'une couche de carbure de silicium sur une tranche de silicium
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
US6972236B2 (en) * 2004-01-30 2005-12-06 Chartered Semiconductor Manufacturing Ltd. Semiconductor device layout and channeling implant process
DE102004010379A1 (de) * 2004-03-03 2005-09-22 Schott Ag Verfahren zur Herstellung von Wafern mit defektarmen Oberflächen, die Verwendung solcher Wafer und damit erhaltene elektronische Bauteile
DE102004035769A1 (de) * 2004-07-27 2006-03-23 Merck Patent Gmbh Mehrschichtige Interferenzpigmente
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
JP4628189B2 (ja) * 2005-06-07 2011-02-09 Ｈｏｙａ株式会社 炭化珪素単結晶の製造方法
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
JP2008311541A (ja) * 2007-06-18 2008-12-25 Fuji Electric Device Technology Co Ltd 炭化珪素半導体基板の製造方法
JP5469840B2 (ja) * 2008-09-30 2014-04-16 昭和電工株式会社 炭化珪素単結晶基板の製造方法
GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
JP5961357B2 (ja) * 2011-09-09 2016-08-02 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
WO2016067918A1 (ja) 2014-10-31 2016-05-06 富士電機株式会社 炭化珪素エピタキシャル膜の成長方法
JP6865431B2 (ja) * 2017-02-16 2021-04-28 国立大学法人埼玉大学 エッチング方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122223A (en) 1979-05-29 1992-06-16 Massachusetts Institute Of Technology Graphoepitaxy using energy beams
JPS63270398A (ja) 1987-04-24 1988-11-08 Sharp Corp 炭化珪素単結晶の成長方法
US4912064A (en) * 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
US5248385A (en) 1991-06-12 1993-09-28 The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers
JP3111662B2 (ja) 1992-07-27 2000-11-27 東レ株式会社 液晶ポリエステル樹脂組成物
US5501173A (en) 1993-10-18 1996-03-26 Westinghouse Electric Corporation Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5915194A (en) 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US6416578B1 (en) * 1999-10-08 2002-07-09 Hoya Corporation Silicon carbide film and method for manufacturing the same
JP3576432B2 (ja) 1998-10-10 2004-10-13 Ｈｏｙａ株式会社 炭化珪素膜及びその製造方法

Also Published As

Publication number Publication date
EP1439246B1 (de) 2008-06-25
EP1143033A3 (de) 2002-10-23
EP1439246A1 (de) 2004-07-21
US20020014198A1 (en) 2002-02-07
US6596080B2 (en) 2003-07-22
EP1143033A2 (de) 2001-10-10
DE60134581D1 (de) 2008-08-07
EP1143033B1 (de) 2004-09-01
DE60105218T2 (de) 2005-08-04

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