DE60045864D1 - Lateraler mosfet aus siliziumkarbid und verfahren zu dessen herstellung - Google Patents

Lateraler mosfet aus siliziumkarbid und verfahren zu dessen herstellung

Info

Publication number
DE60045864D1
DE60045864D1 DE60045864T DE60045864T DE60045864D1 DE 60045864 D1 DE60045864 D1 DE 60045864D1 DE 60045864 T DE60045864 T DE 60045864T DE 60045864 T DE60045864 T DE 60045864T DE 60045864 D1 DE60045864 D1 DE 60045864D1
Authority
DE
Germany
Prior art keywords
production
silicon carbide
carbide mosfet
lateral silicon
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045864T
Other languages
English (en)
Inventor
Dev Alok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60045864D1 publication Critical patent/DE60045864D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60045864T 1999-12-21 2000-11-20 Lateraler mosfet aus siliziumkarbid und verfahren zu dessen herstellung Expired - Lifetime DE60045864D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/469,454 US6323506B1 (en) 1999-12-21 1999-12-21 Self-aligned silicon carbide LMOSFET
PCT/EP2000/011537 WO2001047025A1 (en) 1999-12-21 2000-11-20 Silicon carbide lateral mosfet and method of making the same

Publications (1)

Publication Number Publication Date
DE60045864D1 true DE60045864D1 (de) 2011-06-01

Family

ID=23863863

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045864T Expired - Lifetime DE60045864D1 (de) 1999-12-21 2000-11-20 Lateraler mosfet aus siliziumkarbid und verfahren zu dessen herstellung

Country Status (7)

Country Link
US (1) US6323506B1 (de)
EP (1) EP1177583B1 (de)
JP (1) JP4990458B2 (de)
KR (1) KR100762545B1 (de)
DE (1) DE60045864D1 (de)
TW (1) TW480603B (de)
WO (1) WO2001047025A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830213B2 (ja) * 2001-05-08 2011-12-07 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US6620697B1 (en) * 2001-09-24 2003-09-16 Koninklijke Philips Electronics N.V. Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
US6764907B2 (en) * 2002-02-19 2004-07-20 Bart J. Van Zeghbroeck Method of fabricating self-aligned silicon carbide semiconductor devices
US6982440B2 (en) * 2002-02-19 2006-01-03 Powersicel, Inc. Silicon carbide semiconductor devices with a regrown contact layer
US7241699B2 (en) * 2002-07-30 2007-07-10 Microsemi Corp. Wide bandgap semiconductor device construction
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7547945B2 (en) 2004-09-01 2009-06-16 Micron Technology, Inc. Transistor devices, transistor structures and semiconductor constructions
US7384849B2 (en) 2005-03-25 2008-06-10 Micron Technology, Inc. Methods of forming recessed access devices associated with semiconductor constructions
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7867851B2 (en) 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US7700441B2 (en) 2006-02-02 2010-04-20 Micron Technology, Inc. Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US7589995B2 (en) 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP5344477B2 (ja) * 2009-08-28 2013-11-20 独立行政法人産業技術総合研究所 リセスゲート構造を有する絶縁ゲート型炭化珪素ラテラル電界効果トランジスタ
JP2011100761A (ja) * 2009-11-04 2011-05-19 Sanken Electric Co Ltd 半導体装置、半導体集積回路装置及び半導体装置の製造方法
US9000783B2 (en) * 2010-08-02 2015-04-07 Wafertech, Llc Solid state sensor for metal ion detection and trapping in solution
JP6811674B2 (ja) * 2017-04-27 2021-01-13 日立オートモティブシステムズ株式会社 発熱抑制したａｔｃｕ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093779A (de) * 1973-12-21 1975-07-26
US4453305A (en) 1981-07-31 1984-06-12 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a MISFET
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
JPH0294477A (ja) 1988-09-30 1990-04-05 Toshiba Corp 半導体装置及びその製造方法
US5726463A (en) * 1992-08-07 1998-03-10 General Electric Company Silicon carbide MOSFET having self-aligned gate structure
US5378912A (en) 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
JPH0888283A (ja) 1994-09-16 1996-04-02 Fuji Electric Co Ltd 炭化ケイ素相補形ｍｏｓｆｅｔ
US5672889A (en) * 1995-03-15 1997-09-30 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
EP0993688B1 (de) * 1997-06-23 2009-12-16 James Albert Cooper, Jr. Leistungshalbleiteranordnung mit halbisolierendem Substrat
JP3180895B2 (ja) * 1997-08-18 2001-06-25 富士電機株式会社 炭化けい素半導体装置の製造方法
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level
US6355944B1 (en) * 1999-12-21 2002-03-12 Philips Electronics North America Corporation Silicon carbide LMOSFET with gate reach-through protection

Also Published As

Publication number Publication date
US6323506B1 (en) 2001-11-27
KR20010102255A (ko) 2001-11-15
WO2001047025A8 (en) 2001-10-04
JP4990458B2 (ja) 2012-08-01
JP2003518748A (ja) 2003-06-10
WO2001047025A1 (en) 2001-06-28
EP1177583B1 (de) 2011-04-20
KR100762545B1 (ko) 2007-10-01
EP1177583A1 (de) 2002-02-06
TW480603B (en) 2002-03-21

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