DE60019691D1 - Siliziumkarbid und Verfahren zu seiner Herstellung - Google Patents

Siliziumkarbid und Verfahren zu seiner Herstellung

Info

Publication number
DE60019691D1
DE60019691D1 DE60019691T DE60019691T DE60019691D1 DE 60019691 D1 DE60019691 D1 DE 60019691D1 DE 60019691 T DE60019691 T DE 60019691T DE 60019691 T DE60019691 T DE 60019691T DE 60019691 D1 DE60019691 D1 DE 60019691D1
Authority
DE
Germany
Prior art keywords
preparation
silicon carbide
carbide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60019691T
Other languages
English (en)
Other versions
DE60019691T2 (de
Inventor
Youichi Kamisuki
Naomichi Miyakawa
Shinya Kikugawa
Katsuyoshi Suzuki
Satohiro Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE60019691D1 publication Critical patent/DE60019691D1/de
Publication of DE60019691T2 publication Critical patent/DE60019691T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE60019691T 1999-07-30 2000-07-28 Siliziumkarbid und Verfahren zu seiner Herstellung Expired - Fee Related DE60019691T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11217924A JP2001048649A (ja) 1999-07-30 1999-07-30 炭化ケイ素およびその製造方法
JP21792499 1999-07-30

Publications (2)

Publication Number Publication Date
DE60019691D1 true DE60019691D1 (de) 2005-06-02
DE60019691T2 DE60019691T2 (de) 2006-03-16

Family

ID=16711872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60019691T Expired - Fee Related DE60019691T2 (de) 1999-07-30 2000-07-28 Siliziumkarbid und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (1) US6436361B1 (de)
EP (1) EP1072570B1 (de)
JP (1) JP2001048649A (de)
KR (1) KR100768022B1 (de)
DE (1) DE60019691T2 (de)
TW (1) TW457560B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001048667A (ja) * 1999-08-13 2001-02-20 Asahi Glass Co Ltd セラミックス部品の接合方法
CN101687892B (zh) 2007-03-30 2013-06-05 斯伯恩特私人有限公司 四卤化硅或有机卤硅烷的等离子体辅助的有机官能化
WO2008128080A2 (en) * 2007-04-13 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative stage for use in forming lcd products
WO2008128244A1 (en) * 2007-04-16 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Process of cleaning a substrate for microelectronic applications including directing mechanical energy through a fluid bath and apparatus of same
CN101884099B (zh) * 2007-12-20 2012-07-25 圣戈本陶瓷及塑料股份有限公司 用于处理半导体加工部件的方法以及由此形成的部件
JP5581026B2 (ja) * 2009-09-11 2014-08-27 株式会社ブリヂストン 炭化ケイ素部材の製造方法
KR101158343B1 (ko) * 2011-12-29 2012-06-22 주식회사 티씨케이 실리콘 카바이드 구조물 및 그 제조방법
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
KR101866869B1 (ko) * 2016-08-18 2018-06-14 주식회사 티씨케이 SiC 소재 및 SiC 복합 소재
EP3514128A1 (de) 2018-01-18 2019-07-24 Heraeus GMSI LLC Verfahren zur herstellung eines siliciumcarbidbeschichteten körpers
EP3514130A1 (de) 2018-01-18 2019-07-24 Heraeus GMSI LLC Verfahren zur herstellung eines siliciumcarbidbeschichteten körpers
EP3514259A1 (de) 2018-01-18 2019-07-24 Heraeus GMSI LLC Verfahren zur herstellung eines siliciumcarbidbeschichteten körpers
EP3514129A1 (de) 2018-01-18 2019-07-24 Heraeus GMSI LLC Verfahren zur herstellung eines siliciumcarbidbeschichteten körpers
EP3514257A1 (de) 2018-01-18 2019-07-24 Heraeus GMSI LLC Verfahren zur herstellung eines siliciumcarbidbeschichteten körpers
EP3514127A1 (de) 2018-01-18 2019-07-24 Heraeus GMSI LLC Verfahren zur herstellung eines siliciumcarbidbeschichteten körpers
JP2019151896A (ja) * 2018-03-05 2019-09-12 日本特殊陶業株式会社 ＳｉＣ部材及びこれからなる基板保持部材並びにこれらの製造方法
US20220024773A1 (en) * 2020-07-27 2022-01-27 Globalwafers Co., Ltd. Method of fabricating silicon carbide material
DE102022102373A1 (de) * 2022-02-01 2023-08-03 The Yellow SiC Holding GmbH Verfahren und Vorrichtung zur Herstellung eines siliziumkarbidhaltigen Werkstücks

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668452A (en) * 1980-02-26 1987-05-26 Ngk Spark Plug Co., Ltd. Process for producing silicon carbide heating elements
US5093039A (en) * 1989-01-30 1992-03-03 Kazunori Kijima Highly pure sintered carbide with high electric conductivity and process of producing the same
JP2844374B2 (ja) * 1989-12-27 1999-01-06 東芝セラミックス株式会社 半導体処理用部材
CA2099788A1 (en) 1992-07-31 1994-02-01 Michael A. Pickering Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom
US5374412A (en) * 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide
TW337513B (en) * 1992-11-23 1998-08-01 Cvd Inc Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
JP4355375B2 (ja) * 1997-06-18 2009-10-28 日本碍子株式会社 高電気抵抗及び高熱伝導再結晶ＳｉＣ焼結体及びその製造方法
CA2263339C (en) * 1997-06-27 2002-07-23 Kichiya Tanino Single crystal sic and process for preparing the same

Also Published As

Publication number Publication date
DE60019691T2 (de) 2006-03-16
TW457560B (en) 2001-10-01
JP2001048649A (ja) 2001-02-20
EP1072570A1 (de) 2001-01-31
KR100768022B1 (ko) 2007-10-17
EP1072570B1 (de) 2005-04-27
KR20010070006A (ko) 2001-07-25
US6436361B1 (en) 2002-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee