DE69901135D1 - Tiegel und verfahren zu seiner herstellung - Google Patents
Tiegel und verfahren zu seiner herstellungInfo
- Publication number
- DE69901135D1 DE69901135D1 DE69901135T DE69901135T DE69901135D1 DE 69901135 D1 DE69901135 D1 DE 69901135D1 DE 69901135 T DE69901135 T DE 69901135T DE 69901135 T DE69901135 T DE 69901135T DE 69901135 D1 DE69901135 D1 DE 69901135D1
- Authority
- DE
- Germany
- Prior art keywords
- pot
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/017,942 US5913975A (en) | 1998-02-03 | 1998-02-03 | Crucible and method of preparation thereof |
PCT/US1999/001438 WO1999040242A1 (en) | 1998-02-03 | 1999-01-25 | Crucible and method of preparation thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69901135D1 true DE69901135D1 (de) | 2002-05-08 |
DE69901135T2 DE69901135T2 (de) | 2003-01-02 |
Family
ID=21785400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69901135T Expired - Lifetime DE69901135T2 (de) | 1998-02-03 | 1999-01-25 | Tiegel und verfahren zu seiner herstellung |
Country Status (8)
Country | Link |
---|---|
US (1) | US5913975A (de) |
EP (1) | EP0972095B1 (de) |
JP (1) | JP4347916B2 (de) |
KR (1) | KR100714136B1 (de) |
CN (1) | CN1214135C (de) |
DE (1) | DE69901135T2 (de) |
TW (1) | TW406176B (de) |
WO (1) | WO1999040242A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6319313B1 (en) * | 1999-03-15 | 2001-11-20 | Memc Electronic Materials, Inc. | Barium doping of molten silicon for use in crystal growing process |
JP4548682B2 (ja) * | 1999-04-06 | 2010-09-22 | 株式会社ワコム製作所 | 石英ガラスるつぼの製造方法 |
WO2000059837A1 (en) * | 1999-04-06 | 2000-10-12 | Nanwa Quartz, Inc. | Method for manufacturing quartz glass crucible |
US6749683B2 (en) | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
US6344083B1 (en) | 2000-02-14 | 2002-02-05 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
JP4447738B2 (ja) * | 2000-05-31 | 2010-04-07 | 信越石英株式会社 | 多層構造の石英ガラスルツボの製造方法 |
US6502422B1 (en) | 2000-10-27 | 2003-01-07 | General Electric Company | Method for quartz crucible fabrication |
US6546754B1 (en) | 2000-10-27 | 2003-04-15 | General Electric Company | Apparatus for silica crucible manufacture |
US20030024467A1 (en) * | 2001-08-02 | 2003-02-06 | Memc Electronic Materials, Inc. | Method of eliminating near-surface bubbles in quartz crucibles |
JP4330363B2 (ja) * | 2003-03-28 | 2009-09-16 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
JP4339003B2 (ja) * | 2003-04-02 | 2009-10-07 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボの製造方法 |
US7383696B2 (en) * | 2005-09-08 | 2008-06-10 | Heraeus Shin-Etsu America, Inc. | Silica glass crucible with bubble-free and reduced bubble growth wall |
US20090120353A1 (en) * | 2007-11-13 | 2009-05-14 | Memc Electronic Materials, Inc. | Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt |
JP4922233B2 (ja) * | 2008-04-30 | 2012-04-25 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
JP5102744B2 (ja) * | 2008-10-31 | 2012-12-19 | ジャパンスーパークォーツ株式会社 | 石英ルツボ製造用モールド |
US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
JP5047227B2 (ja) * | 2009-05-27 | 2012-10-10 | ジャパンスーパークォーツ株式会社 | シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 |
JP5453679B2 (ja) * | 2009-10-02 | 2014-03-26 | 株式会社Sumco | シリカガラスルツボの製造装置及びシリカガラスルツボの製造方法 |
US9003832B2 (en) * | 2009-11-20 | 2015-04-14 | Heraeus Shin-Etsu America, Inc. | Method of making a silica crucible in a controlled atmosphere |
CN101811832B (zh) * | 2010-05-10 | 2012-10-03 | 宁波宝斯达坩埚保温制品有限公司 | 石英坩埚内表面处理工艺 |
US8857214B2 (en) | 2011-11-18 | 2014-10-14 | Sunedison Semiconductor Limited | Methods for producing crucibles with a reduced amount of bubbles |
US8524319B2 (en) | 2011-11-18 | 2013-09-03 | Memc Electronic Materials, Inc. | Methods for producing crucibles with a reduced amount of bubbles |
WO2013074743A1 (en) * | 2011-11-18 | 2013-05-23 | Memc Electronic Materials, Inc. | Crucibles with a reduced amount of bubbles, ingots and wafers produced by use of such crucibles and related methods |
CN109097823B (zh) * | 2017-06-20 | 2021-09-10 | 常州博科浩纳知识产权服务有限公司 | 单晶硅生长用石英坩埚内筒体及其碳纤维烧结筒以及它们的制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3302745A1 (de) * | 1983-01-27 | 1984-08-02 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von gegenstaenden aus hochreinem synthetischem quarzglas |
JPS6191986A (ja) * | 1984-10-12 | 1986-05-10 | Nec Corp | 光通信用光増幅器 |
US4911896A (en) * | 1986-07-24 | 1990-03-27 | General Electric Company | Fused quartz member for use in semiconductor manufacture |
US4935046A (en) * | 1987-12-03 | 1990-06-19 | Shin-Etsu Handotai Company, Limited | Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
US4979973A (en) * | 1988-09-13 | 1990-12-25 | Shin-Etsu Chemical Co., Ltd. | Preparation of fused silica glass by hydrolysis of methyl silicate |
JP2714860B2 (ja) * | 1989-07-28 | 1998-02-16 | 東芝セラミックス株式会社 | 半導体巣結晶引上げ用石英ガラスルツボ |
JP2933404B2 (ja) * | 1990-06-25 | 1999-08-16 | 信越石英 株式会社 | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
JPH0791148B2 (ja) * | 1991-05-27 | 1995-10-04 | 三菱マテリアル株式会社 | シリコン単結晶引上げ用石英ルツボとその製造方法 |
US5284631A (en) * | 1992-01-03 | 1994-02-08 | Nkk Corporation | Crucible for manufacturing single crystals |
JP2888079B2 (ja) * | 1993-02-04 | 1999-05-10 | 信越半導体株式会社 | シリコン単結晶引上げ用ルツボ |
DE19541372A1 (de) * | 1994-11-15 | 1996-05-23 | Gen Electric | Tiegel aus geschmolzenem Quarz sowie Verfahren zu dessen Herstellung |
-
1998
- 1998-02-03 US US09/017,942 patent/US5913975A/en not_active Expired - Lifetime
-
1999
- 1999-01-25 CN CNB998002585A patent/CN1214135C/zh not_active Expired - Fee Related
- 1999-01-25 JP JP54047199A patent/JP4347916B2/ja not_active Expired - Fee Related
- 1999-01-25 EP EP99903333A patent/EP0972095B1/de not_active Expired - Lifetime
- 1999-01-25 WO PCT/US1999/001438 patent/WO1999040242A1/en active IP Right Grant
- 1999-01-25 DE DE69901135T patent/DE69901135T2/de not_active Expired - Lifetime
- 1999-01-25 KR KR1019997009006A patent/KR100714136B1/ko not_active IP Right Cessation
- 1999-02-01 TW TW088101499A patent/TW406176B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0972095A1 (de) | 2000-01-19 |
CN1256724A (zh) | 2000-06-14 |
CN1214135C (zh) | 2005-08-10 |
JP2001519752A (ja) | 2001-10-23 |
DE69901135T2 (de) | 2003-01-02 |
JP4347916B2 (ja) | 2009-10-21 |
US5913975A (en) | 1999-06-22 |
TW406176B (en) | 2000-09-21 |
WO1999040242A1 (en) | 1999-08-12 |
KR100714136B1 (ko) | 2007-05-02 |
KR20010005929A (ko) | 2001-01-15 |
EP0972095B1 (de) | 2002-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de | ||
8370 | Indication of lapse of patent is to be deleted | ||
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
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