KR101866869B1 - SiC 소재 및 SiC 복합 소재 - Google Patents
SiC 소재 및 SiC 복합 소재 Download PDFInfo
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- KR101866869B1 KR101866869B1 KR1020160104726A KR20160104726A KR101866869B1 KR 101866869 B1 KR101866869 B1 KR 101866869B1 KR 1020160104726 A KR1020160104726 A KR 1020160104726A KR 20160104726 A KR20160104726 A KR 20160104726A KR 101866869 B1 KR101866869 B1 KR 101866869B1
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- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
Abstract
[식 1]
회절 강도비(I)=((200)면 피크 강도 + (220)면의 피크 강도)/(111)면의 피크 강도
Description
도 2(a) 및 도2(b)는, 본 발명의 일 실시예에 따른, 본 발명의 SiC 소재의 X-선 회절패턴을 예시적으로 나타낸 것이다.
도 3은, 본 발명의 일 실시예에 따른, 본 발명의 SiC 다중층 복합 소재의 X-선 회절패턴을 예시적으로 나타낸 것이다.
Claims (13)
- 하기의 식 1에 따라 계산되는 X-회절 피크의 회절 강도비(I)가 1.0 이하이고,
상기 X-회절 피크에서 (111)면이 우선성장 결정방향이며,
CVD 증착층인 SiC 소재.
[식 1]
회절 강도비(I)=((200)면 피크 강도 + (220)면의 피크 강도)/(111)면의 피크 강도
- 삭제
- 삭제
- 제1항에 있어서,
상기 회절 강도비(I)는, 0.9 이하인 것인, SiC 소재.
- 제1항에 있어서,
상기 회절 강도비(I)는, 0.8 이하인 것인, SiC 소재.
- 제1항에 있어서,
상기 (111)면의 피크의 2θ 값은, 35°내지 36°이며
상기 (200)면 피크의 2θ 값은, 41°내지 42°이고,
상기 (220)면의 피크의 2θ 값은, 60°내지 61°인 것인, SiC 소재. - 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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KR1020160104726A KR101866869B1 (ko) | 2016-08-18 | 2016-08-18 | SiC 소재 및 SiC 복합 소재 |
US16/325,983 US11591227B2 (en) | 2016-08-18 | 2017-08-18 | SiC material and SiC composite material |
JP2019530632A JP6831916B2 (ja) | 2016-08-18 | 2017-08-18 | SiC素材及びSiC複合素材 |
TW106128050A TWI646229B (zh) | 2016-08-18 | 2017-08-18 | 碳化矽材料及碳化矽複合材料 |
PCT/KR2017/009002 WO2018034532A1 (ko) | 2016-08-18 | 2017-08-18 | Sic 소재 및 sic 복합 소재 |
CN201780049770.7A CN109562948B (zh) | 2016-08-18 | 2017-08-18 | SiC材料及SiC复合材料 |
SG11201901230VA SG11201901230VA (en) | 2016-08-18 | 2017-08-18 | Sic material and sic composite material |
JP2021012846A JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
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KR1020160104726A KR101866869B1 (ko) | 2016-08-18 | 2016-08-18 | SiC 소재 및 SiC 복합 소재 |
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KR20180020442A KR20180020442A (ko) | 2018-02-28 |
KR101866869B1 true KR101866869B1 (ko) | 2018-06-14 |
KR101866869B9 KR101866869B9 (ko) | 2022-05-02 |
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US (1) | US11591227B2 (ko) |
JP (2) | JP6831916B2 (ko) |
KR (1) | KR101866869B1 (ko) |
CN (1) | CN109562948B (ko) |
SG (1) | SG11201901230VA (ko) |
TW (1) | TWI646229B (ko) |
WO (1) | WO2018034532A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020213847A1 (ko) * | 2019-04-18 | 2020-10-22 | 주식회사 티씨케이 | Sic 소재 및 이의 제조방법 |
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JP4361177B2 (ja) * | 1999-11-02 | 2009-11-11 | 東洋炭素株式会社 | 炭化ケイ素材料及びrtp装置用治具 |
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- 2017-08-18 CN CN201780049770.7A patent/CN109562948B/zh active Active
- 2017-08-18 US US16/325,983 patent/US11591227B2/en active Active
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KR100269890B1 (ko) | 1997-01-20 | 2000-11-01 | 이와나미 기요히사 | 경면체 |
JP4361177B2 (ja) * | 1999-11-02 | 2009-11-11 | 東洋炭素株式会社 | 炭化ケイ素材料及びrtp装置用治具 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020213847A1 (ko) * | 2019-04-18 | 2020-10-22 | 주식회사 티씨케이 | Sic 소재 및 이의 제조방법 |
US11658060B2 (en) | 2019-04-18 | 2023-05-23 | Tokai Carbon Korea Co., Ltd | SiC material and method for manufacturing same |
Also Published As
Publication number | Publication date |
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WO2018034532A1 (ko) | 2018-02-22 |
US11591227B2 (en) | 2023-02-28 |
JP6831916B2 (ja) | 2021-02-17 |
KR20180020442A (ko) | 2018-02-28 |
CN109562948A (zh) | 2019-04-02 |
SG11201901230VA (en) | 2019-03-28 |
JP2021066657A (ja) | 2021-04-30 |
KR101866869B9 (ko) | 2022-05-02 |
JP2019526525A (ja) | 2019-09-19 |
TWI646229B (zh) | 2019-01-01 |
TW201812123A (zh) | 2018-04-01 |
US20190177172A1 (en) | 2019-06-13 |
CN109562948B (zh) | 2022-09-30 |
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