JP2021138597A - ウエハ、エピタキシャルウエハ及びその製造方法 - Google Patents
ウエハ、エピタキシャルウエハ及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 71
- 239000013078 crystal Substances 0.000 claims description 33
- 239000002994 raw material Substances 0.000 claims description 32
- 238000012545 processing Methods 0.000 claims description 24
- 239000011810 insulating material Substances 0.000 claims description 23
- 238000005498 polishing Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 18
- 238000005520 cutting process Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000000227 grinding Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 158
- 239000007789 gas Substances 0.000 description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 244000000626 Daucus carota Species 0.000 description 1
- 235000002767 Daucus carota Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Abstract
Description
上記の目的を達成するために、一実施例に係るウエハ10は、一面11及び他面12を含み、前記一面のRsk粗さが−3nm〜3nmであり、前記一面の縁領域14のRa粗さと、前記一面の中心領域13のRa粗さとの差が−2nm〜2nmであり、前記一面の縁領域は、前記一面の縁から中心方向に向かう距離が、前記ウエハの半径に対して13.3%〜32.1%である領域であり、前記一面の中心領域は、前記一面の中心から前記ウエハの半径に対して9.4%の半径を有する領域である。
上記の目的を達成するために、一実施例に係るエピタキシャルウエハ20は、前記ウエハ10と;前記ウエハの一面上に形成されたエピタキシャル層15と;を含む。
上記の目的を達成するために、一実施例に係るウエハの製造方法は、
内部空間を有する反応容器200に、原料物質300と炭化珪素種結晶を互いに対向するように配置する準備ステップと;前記内部空間の温度、圧力及び雰囲気を調節して前記原料物質を昇華させ、前記種結晶から成長した炭化珪素インゴット100を設ける成長ステップと;前記反応容器を冷却させ、前記炭化珪素インゴットを回収する冷却ステップと;前記回収された炭化珪素インゴットを切断してウエハを設ける切断ステップと;前記設けられたウエハの厚さを平坦化し、表面を研磨する加工ステップと;を含み、前記反応容器は、外面を取り囲む断熱材と、前記反応容器又は前記内部空間の温度を調節する加熱手段とを含み、前記断熱材の密度は0.13g/cc〜0.28g/ccであり、前記準備ステップは、内部空間を有する反応容器200に、原料物質300と炭化珪素種結晶を互いに対向するように配置するステップである。
上記の目的を達成するために、一実施例に係るエピタキシャルウエハの製造方法は、
前記方法によって製造されたウエハ10が配置された成長容器内に、エピタキシャル成長のための原料ガスを注入し、化学気相蒸着法によって前記ウエハの一面11上にエピタキシャル層を成長させる成長ステップを含む。
図4に炭化珪素インゴットの製造装置の一例を示したように、反応容器200の内部空間の下部に原料である炭化珪素粉末を装入し、その上部に炭化珪素種結晶を配置した。このとき、炭化珪素種結晶は、6インチの4H−SiC結晶からなるものを適用し、C面((000−1)面)が内部空間の下部の炭化珪素原料に向かうように通常の方法により固定した。
前記冷却された炭化珪素インゴットの(0001)面と4°のオフ角を有するように切断し、360μmの厚さを有するウエハを設けた。
前記ウエハの製造で製造されたウエハのSi面である一面の縁から中心方向に向かう距離が前記ウエハの半径に対して13.3%〜32.1%である領域(10mm〜24mmである領域)から、10×10mm2のウエハサンプルを切断し、前記ウエハの一面の中心から前記ウエハの半径に対して9.4%の半径(7.05mm)を有する領域から、10×10mm2のウエハサンプルを切断した。前記ウエハサンプルの5つの領域(5×5μm2)のRa、前記ウエハ全体のRa及びRsk粗さを、AFM機器XE−150(Park Systems社)を通じて測定し、その結果を表1に示した。
前記ウエハの製造で製造されたウエハを成長容器内に配置した。前記成長容器にエピタキシャル成長のための原料ガスであるSiH4、C3H8ガスを注入し、ドーピングガスとして窒素を注入し、化学気相蒸着法によって前記ウエハの一面上にエピタキシャル層を成長させた。成長後、エピタキシャル層の厚さは12μmであり、ドーパント濃度は8×1015/cm3であった。
前記回収されたエピタキシャルウエハの最大厚さ及び最小厚さを測定し、下記式1による不均一度を計算し、その結果を表2に示した。
11 一面
12 他面
13 中心領域
14 縁領域
15 エピタキシャル層
20 エピタキシャルウエハ
100 炭化珪素インゴット
200 反応容器
210 本体
220 蓋
300 原料
400 断熱材
500 反応チャンバ、石英管
600 加熱手段
700 真空排気装置
800 マスフローコントローラ
810 配管
Claims (13)
- ウエハと;前記ウエハの一面上に形成されたエピタキシャル層と;を含み、
前記ウエハは、
一面及び他面を含み、
前記一面のRsk粗さが−3nm〜3nmであり、
前記一面の縁領域のRa粗さと、前記一面の中心領域のRa粗さとの差が−2nm〜2nmであり、
前記一面の縁領域は、前記一面の縁から中心方向に向かう距離が、前記ウエハの半径に対して13.3%〜32.1%である領域であり、
前記一面の中心領域は、前記一面の中心から前記ウエハの半径に対して9.4%の半径を有する領域である、エピタキシャルウエハ。 - 前記一面は、表面に珪素原子層が現れるSi面である、請求項1に記載のエピタキシャルウエハ。
- 前記一面の中心領域のRa粗さは4nm以下である、請求項1に記載のエピタキシャルウエハ。
- 前記一面の縁領域のRa粗さは5nm以下である、請求項1に記載のエピタキシャルウエハ。
- 前記一面のRsk粗さが−2nm〜2nmである、請求項1に記載のエピタキシャルウエハ。
- 前記ウエハは、4インチ以上の4H炭化珪素ウエハである、請求項1に記載のエピタキシャルウエハ。
- 一面及び他面を含み、
前記一面のRsk粗さが−3nm〜3nmであり、
前記一面の縁領域のRa粗さと、前記一面の中心領域のRa粗さとの差が−2nm〜2nmであり、
前記一面の縁領域は、前記一面の縁から中心方向に向かう距離が、前記ウエハの半径に対して13.3%〜32.1%である領域であり、
前記一面の中心領域は、前記一面の中心から前記ウエハの半径に対して9.4%の半径を有する領域である、ウエハ。 - 前記一面は、表面に珪素原子層が現れるSi面である、請求項8に記載のウエハ。
- 前記一面の中心領域のRa粗さは4nm以下であり、
前記一面の縁領域のRa粗さは5nm以下である、請求項8に記載のウエハ。 - 前記一面のRsk粗さが−2nm〜2nmである、請求項8に記載のウエハ。
- 内部空間を有する反応容器に、原料物質と炭化珪素種結晶を互いに対向するように配置する準備ステップと、
前記内部空間の温度、圧力及び雰囲気を調節して前記原料物質を昇華させ、前記種結晶から成長した炭化珪素インゴットを設ける成長ステップと、
前記反応容器を冷却させ、前記炭化珪素インゴットを回収する冷却ステップと、
前記回収された炭化珪素インゴットを切断してウエハを設ける切断ステップと、
前記設けられたウエハの厚さを平坦化し、表面を研磨する加工ステップと、
前記ウエハが配置された成長容器内に、エピタキシャル成長のための原料ガスを注入し、化学気相蒸着法によって前記ウエハの一面上にエピタキシャル層を成長させる成長ステップと、を含み、
前記反応容器は、外面を取り囲む断熱材と、前記反応容器又は前記内部空間の温度を調節する加熱手段とを含み、
前記断熱材の密度は0.13g/cc〜0.28g/ccであり、
前記加工ステップは、互いに異なる表面粒度を有する複数の研削ホイールを前記ウエハに当接させて行われ、
前記加工ステップが行われたウエハは、一面のRsk粗さが−3nm〜3nmであり、
一面の縁領域のRa粗さと、一面の中心領域のRa粗さとの差が−2nm〜2nmであり、
前記一面の縁領域は、前記一面の縁から中心方向に向かう距離が、前記ウエハの半径に対して13.3%〜32.1%である領域であり、
前記一面の中心領域は、前記一面の中心から前記ウエハの半径に対して9.4%の半径を有する領域である、エピタキシャルウエハの製造方法。
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