JP2021187727A - ウエハの製造方法、エピタキシャルウエハの製造方法、これによって製造されたウエハ及びエピタキシャルウエハ - Google Patents
ウエハの製造方法、エピタキシャルウエハの製造方法、これによって製造されたウエハ及びエピタキシャルウエハ Download PDFInfo
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Abstract
Description
上記の目的を達成するために、一実施例に係るウエハの製造方法は、内部空間を有する反応容器200に、原料物質300と炭化珪素種結晶を互いに対向するように配置する準備ステップと;前記内部空間の温度、圧力及び雰囲気を調節して前記原料物質を昇華させ、前記種結晶から成長した炭化珪素インゴット100を設ける成長ステップと;前記反応容器を冷却させ、前記炭化珪素インゴットを回収する冷却ステップと;前記回収された炭化珪素インゴットを切断してウエハを設ける切断ステップと;前記設けられたウエハの厚さを平坦化し、表面を研磨する加工ステップと;を含み、前記反応容器は、外面を取り囲む断熱材と、前記反応容器又は前記内部空間の温度を調節する加熱手段とを含み、前記断熱材の密度は0.14g/cc〜0.28g/ccであり、前記加工ステップは、1000mesh〜3000meshの表面粒度を有する第1研削ホイールで加工する第1加工ステップと;6000mesh〜10000meshの表面粒度を有する第2研削ホイールで加工する第2加工ステップと;を含む。
上記の目的を達成するために、一実施例に係るウエハ10は、一面11及び他面12を含み、前記一面において総スクラッチの長さの和がウエハの直径の長さ以下であり、前記一面において0.3μm以上の粒度を有するパーティクルの平均密度が3/cm2以下であり、前記一面においてマイクロパイプ(micropipe)の平均密度が3/cm2以下であってもよい。
上記の目的を達成するために、一実施例に係るエピタキシャルウエハの製造方法は、前記方法によって製造されたウエハ10が配置された成長容器内に、エピタキシャル成長のための原料ガスを注入し、化学気相蒸着法(chemical vapor deposition)によって前記ウエハの一面11上にエピタキシャル層を成長させる成長ステップを含む。
上記の目的を達成するために、一実施例に係るエピタキシャルウエハ20は、ウエハ10;及び前記ウエハの一面上に形成されたエピタキシャル層15;を含む。
図4に炭化珪素インゴットの製造装置の一例を示したように、反応容器200の内部空間の下部に原料である炭化珪素粉末を装入し、その上部に炭化珪素種結晶を配置した。このとき、炭化珪素種結晶は、直径6インチの4H−SiC結晶からなるものを適用し、C面((000−1)面)が内部空間の下部の炭化珪素原料に向かうように通常の方法により固定した。
ウエハの光学式測定装備(Candela CS20、KLA−Tencor社)を通じて、製造されたウエハのマイクロパイプ欠陥密度、パーティクルの密度、スクラッチの長さを測定し、その結果を表2に示した。
前記ウエハの製造で製造されたウエハを成長容器内に配置した。前記成長容器にエピタキシャル成長のための原料ガスであるSiH4、C3H8ガスを注入し、ドーピングガスとして窒素を注入し、化学気相蒸着法によって前記ウエハの一面上にエピタキシャル層を成長させた。成長後、エピタキシャル層の厚さは12μmであり、ドーパント濃度は8×1015/cm3であった。
前記エピタキシャルウエハの製造で製造されたエピタキシャルウエハの各種欠陥密度を、ウエハの光学式測定装備(Candela CS20、KLA−Tencor社)を通じて測定し、その結果を表2に示した。
11 一面
12 他面
15 エピタキシャル層
20 エピタキシャルウエハ
100 炭化珪素インゴット
200 反応容器
210 本体
220 蓋
300 原料物質
400 断熱材
500 反応チャンバ、石英管
600 加熱手段
700 真空排気装置
800 マスフローコントローラ
810 配管
Claims (15)
- 内部空間を有する反応容器に、原料物質と炭化珪素種結晶を互いに対向するように配置する準備ステップと;
前記内部空間の温度、圧力及び雰囲気を調節して前記原料物質を昇華させ、前記種結晶から成長した炭化珪素インゴットを設ける成長ステップと;
前記反応容器を冷却させ、前記炭化珪素インゴットを回収する冷却ステップと;
前記回収された炭化珪素インゴットを切断してウエハを設ける切断ステップと;
前記設けられたウエハの厚さを平坦化し、表面を研磨する加工ステップと;を含み、
前記反応容器は、外面を取り囲む断熱材と、前記反応容器又は前記内部空間の温度を調節する加熱手段とを含み、
前記断熱材の密度は0.14g/cc〜0.28g/ccであり、
前記加工ステップは、1000mesh〜3000meshの表面粒度を有する第1研削ホイールで加工する第1加工ステップ;及び6000mesh〜10000meshの表面粒度を有する第2研削ホイールで加工する第2加工ステップ;を含む、ウエハの製造方法。 - 前記第1加工ステップは、前記第1研削ホイールが前記ウエハに向かう送り速度が0.2μm/s以上1.5μm/s未満である、請求項1に記載のウエハの製造方法。
- 前記第2加工ステップは、前記第2研削ホイールが前記ウエハに向かう送り速度が0.2μm/s以上1.5μm/s未満である、請求項1に記載のウエハの製造方法。
- 前記第1研削ホイールの回転速度は1000rpm〜2000rpmである、請求項1に記載のウエハの製造方法。
- 前記第2研削ホイールの回転速度は600rpm〜1800rpmである、請求項1に記載のウエハの製造方法。
- 前記加工ステップは、化学的機械的研磨(chemical mechanical polishing)ステップをさらに含む、請求項1に記載のウエハの製造方法。
- 前記化学的機械的研磨ステップが行われたウエハは、
一面及び他面を含み、
前記一面において総スクラッチの長さの和が、前記ウエハの直径の長さ以下であり、
前記一面において0.3μm以上の粒度を有するパーティクルの平均密度が3/cm2以下であり、
前記一面においてマイクロパイプの平均密度が3/cm2以下である、請求項7に記載のウエハの製造方法。 - 一面及び他面を含み、
前記一面において総スクラッチの長さが、ウエハの直径の長さ以下であり、
前記一面において0.3μm以上の粒度を有するパーティクルの平均密度が3/cm2以下であり、
前記一面においてマイクロパイプの平均密度が3/cm2以下である、ウエハ。 - 前記一面において総スクラッチの長さが2cm以下である、請求項9に記載のウエハ。
- 前記一面は、表面に珪素原子層が現れるSi面であり、
前記ウエハは、4インチ以上の4H炭化珪素ウエハである、請求項9に記載のウエハ。 - 請求項9に記載のウエハと;
前記ウエハの一面上に形成されたエピタキシャル層と;を含む、エピタキシャルウエハ。 - 前記エピタキシャル層は、
ダウンフォール(downfall)欠陥の平均密度が0.3/cm2以下であり、
三角(triangular)欠陥の平均密度が1/cm2以下であり、
キャロット(carrot)欠陥の平均密度が2/cm2以下であり、
刃状転位の平均密度が4/cm2以下である、請求項13に記載のエピタキシャルウエハ。
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