JP2019525495A - 透過度が異なる複数の層を有するSiC半導体製造用部品及びその製造方法 - Google Patents
透過度が異なる複数の層を有するSiC半導体製造用部品及びその製造方法 Download PDFInfo
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Abstract
Description
Claims (17)
- 2以上の積層された層を含み、
前記積層された層の各層はSiCを含み、隣接する異なる層と互いに異なる透過度値を有する、
透過度が異なる複数の層を有するSiC半導体製造用部品。 - 前記積層された層の各層の境界で色が次第に変わる、請求項1に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 前記積層された層の各層の組成は互いに同一である、請求項1に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 前記積層された層はグラファイトの母材上に積層されたものである、請求項1に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 前記積層された層の各層の境界で、1つ以上の異常結晶の成長の断絶を含む、請求項1に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 前記半導体製造用部品は、プラズマ処理装置部品として、リング、電極部、及びコンダクターからなるグループより選択される少なくともいずれか1つを含む、請求項1に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 前記積層された層の少なくとも一部分の上に形成されたSiCを含む再生部をさらに含む、請求項1ないし6のいずれか一項に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 前記SiCを含む再生部及び前記再生部に隣接する積層された層間の色が相異なる、請求項7に記載の透過度が異なる複数の層を有するSiC半導体製造用部品。
- 複数の原料ガス噴射導入口を備える化学的な気相蒸着チャンバー内において、
前記複数の原料ガス噴射導入口のうちの一部を含む第1導入口グループを用いてSiCを含む第1層を積層するステップと、
前記複数の原料ガス噴射導入口のうち、他の一部を含む第2導入口グループを用いてSiCを含む第2層を積層するステップと、
を含む、透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。 - 前記第2層を積層するステップの後に、第3導入口グループを用いてSiCを含む第3層を積層するステップをさらに含む、請求項9に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
- 各層を積層するステップの間に化学的な気相蒸着チャンバー内で前記SiC半導体製造用部品を保持する、請求項9に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
- 前記化学的な気相蒸着チャンバー内で各導入口グループの位置が相異なる、請求項9に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
- 各層を積層するステップを行う時間は相異なる、請求項9に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
- 前記SiC半導体製造用部品を乾式エッチング装置でプラズマを処理するステップと、
前記SiC半導体製造用部品の積層された層の少なくとも一部分の上に、SiCを含む再生部を形成するステップと、
をさらに含む、請求項9に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。 - 前記再生部の平均厚さは0.1mm〜3mmである、請求項14に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
- 前記プラズマを処理するステップ及び再生部を形成するステップの間に、前記SiC半導体製造用部品を加工するステップ、予め洗浄するステップ、又はこの2つをさらに含む、請求項14に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
- 前記再生部を形成するステップの後に、前記形成された再生部を後加工するステップ、後洗浄するステップ、又はこの2つをさらに含む、請求項14に記載の透過度が異なる複数の層を有するSiC半導体製造用部品の製造方法。
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KR20160104727 | 2016-08-18 | ||
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KR1020170104300A KR101914289B1 (ko) | 2016-08-18 | 2017-08-17 | 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법 |
KR10-2017-0104300 | 2017-08-17 | ||
PCT/KR2017/009001 WO2018034531A1 (ko) | 2016-08-18 | 2017-08-18 | 투과도가 다른 복수 개의 층을 갖는 sic 반도체 제조용 부품 및 그 제조방법 |
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KR102096787B1 (ko) | 2019-06-11 | 2020-04-03 | 주식회사 바이테크 | 다층 구조의 다결정 탄화규소 성형체의 제조방법 |
KR102188258B1 (ko) | 2020-04-27 | 2020-12-09 | 주식회사 바이테크 | 일체형 다층 구조의 다결정 탄화규소 성형체 제조방법과 다결정 탄화규소 성형체 및 플라즈마 공정장비용 샤워헤드 |
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US20190206686A1 (en) | 2019-07-04 |
KR102304519B1 (ko) | 2021-09-27 |
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KR20190124177A (ko) | 2019-11-04 |
KR102208252B9 (ko) | 2023-05-24 |
KR20190124178A (ko) | 2019-11-04 |
KR20180020912A (ko) | 2018-02-28 |
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SG11201901227PA (en) | 2019-03-28 |
KR102595804B1 (ko) | 2023-10-31 |
KR20180119544A (ko) | 2018-11-02 |
CN109564933A (zh) | 2019-04-02 |
KR102216867B1 (ko) | 2021-02-18 |
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