KR102208252B9 - 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법 - Google Patents

투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법

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Publication number
KR102208252B9
KR102208252B9 KR1020190130432A KR20190130432A KR102208252B9 KR 102208252 B9 KR102208252 B9 KR 102208252B9 KR 1020190130432 A KR1020190130432 A KR 1020190130432A KR 20190130432 A KR20190130432 A KR 20190130432A KR 102208252 B9 KR102208252 B9 KR 102208252B9
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South Korea
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sic
manufacturning
same
different transmittance
manufactoring
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KR1020190130432A
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KR20190124177A (ko
KR102208252B1 (ko
Inventor
김정일
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주식회사 티씨케이
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Application filed by 주식회사 티씨케이 filed Critical 주식회사 티씨케이
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Woven Fabrics (AREA)
KR1020190130432A 2016-08-18 2019-10-21 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법 KR102208252B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020160104727 2016-08-18
KR20160104727 2016-08-18
KR1020180128337A KR102304519B1 (ko) 2016-08-18 2018-10-25 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020180128337A Division KR102304519B1 (ko) 2016-08-18 2018-10-25 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법

Publications (3)

Publication Number Publication Date
KR20190124177A KR20190124177A (ko) 2019-11-04
KR102208252B1 KR102208252B1 (ko) 2021-01-28
KR102208252B9 true KR102208252B9 (ko) 2023-05-24

Family

ID=61401375

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020170104300A KR101914289B1 (ko) 2016-08-18 2017-08-17 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
KR1020180128337A KR102304519B1 (ko) 2016-08-18 2018-10-25 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
KR1020190130433A KR102216867B1 (ko) 2016-08-18 2019-10-21 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
KR1020190130432A KR102208252B1 (ko) 2016-08-18 2019-10-21 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
KR1020210122697A KR102595804B1 (ko) 2016-08-18 2021-09-14 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법

Family Applications Before (3)

Application Number Title Priority Date Filing Date
KR1020170104300A KR101914289B1 (ko) 2016-08-18 2017-08-17 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
KR1020180128337A KR102304519B1 (ko) 2016-08-18 2018-10-25 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법
KR1020190130433A KR102216867B1 (ko) 2016-08-18 2019-10-21 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020210122697A KR102595804B1 (ko) 2016-08-18 2021-09-14 투과도가 다른 복수 개의 층을 갖는 SiC 반도체 제조용 부품 및 그 제조방법

Country Status (6)

Country Link
US (1) US20190206686A1 (ko)
JP (1) JP6756907B2 (ko)
KR (5) KR101914289B1 (ko)
CN (1) CN109564933B (ko)
SG (1) SG11201901227PA (ko)
TW (1) TWI668862B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102305539B1 (ko) * 2019-04-16 2021-09-27 주식회사 티씨케이 SiC 엣지 링
KR102096787B1 (ko) 2019-06-11 2020-04-03 주식회사 바이테크 다층 구조의 다결정 탄화규소 성형체의 제조방법
KR102188258B1 (ko) 2020-04-27 2020-12-09 주식회사 바이테크 일체형 다층 구조의 다결정 탄화규소 성형체 제조방법과 다결정 탄화규소 성형체 및 플라즈마 공정장비용 샤워헤드
KR102578550B1 (ko) * 2021-05-27 2023-09-15 주식회사 티씨케이 반도체 제조장치용 부품 및 그의 제조방법

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KR101631797B1 (ko) * 2015-04-13 2016-06-20 주식회사 티씨케이 건식식각장치의 SiC 구조물 및 그 제조방법
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Also Published As

Publication number Publication date
JP6756907B2 (ja) 2020-09-16
KR20180020912A (ko) 2018-02-28
KR20190124177A (ko) 2019-11-04
CN109564933A (zh) 2019-04-02
TW201818544A (zh) 2018-05-16
SG11201901227PA (en) 2019-03-28
KR101914289B9 (ko) 2023-04-20
US20190206686A1 (en) 2019-07-04
CN109564933B (zh) 2020-12-25
KR102208252B1 (ko) 2021-01-28
JP2019525495A (ja) 2019-09-05
KR102216867B1 (ko) 2021-02-18
KR20180119544A (ko) 2018-11-02
KR20210118014A (ko) 2021-09-29
TWI668862B (zh) 2019-08-11
KR101914289B1 (ko) 2018-11-01
KR102595804B1 (ko) 2023-10-31
KR20190124178A (ko) 2019-11-04
KR102304519B1 (ko) 2021-09-27

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