SG11201901227PA - Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing the same - Google Patents

Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing the same

Info

Publication number
SG11201901227PA
SG11201901227PA SG11201901227PA SG11201901227PA SG11201901227PA SG 11201901227P A SG11201901227P A SG 11201901227PA SG 11201901227P A SG11201901227P A SG 11201901227PA SG 11201901227P A SG11201901227P A SG 11201901227PA SG 11201901227P A SG11201901227P A SG 11201901227PA
Authority
SG
Singapore
Prior art keywords
component
layers
sic semiconductor
manufacturing
same
Prior art date
Application number
SG11201901227PA
Inventor
Joung Il Kim
Original Assignee
Tokai Carbon Korea Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=61401375&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201901227P(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokai Carbon Korea Co Ltd filed Critical Tokai Carbon Korea Co Ltd
Priority claimed from PCT/KR2017/009001 external-priority patent/WO2018034531A1/en
Publication of SG11201901227PA publication Critical patent/SG11201901227PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Woven Fabrics (AREA)

Abstract

COMPONENT FOR FABRICATING SIC SEMICONDUCTOR, HAVING PLURALITY OF LAYERS HAVING DIFFERENT TRANSMITTANCES, AND METHOD FOR MANUFACTURING THE SAME [] Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer. Fig. 6
SG11201901227PA 2016-08-18 2017-08-18 Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing the same SG11201901227PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20160104727 2016-08-18
KR1020170104300A KR101914289B1 (en) 2016-08-18 2017-08-17 SiC PART FOR SEMICONDUCTOR MANUFACTORING COMPRISING DIFFERENT TRANSMITTANCE MULTILAYER AND METHOD OF MANUFACTURNING THE SAME
PCT/KR2017/009001 WO2018034531A1 (en) 2016-08-18 2017-08-18 Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing same

Publications (1)

Publication Number Publication Date
SG11201901227PA true SG11201901227PA (en) 2019-03-28

Family

ID=61401375

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901227PA SG11201901227PA (en) 2016-08-18 2017-08-18 Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing the same

Country Status (6)

Country Link
US (1) US20190206686A1 (en)
JP (1) JP6756907B2 (en)
KR (5) KR101914289B1 (en)
CN (1) CN109564933B (en)
SG (1) SG11201901227PA (en)
TW (1) TWI668862B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102305539B1 (en) * 2019-04-16 2021-09-27 주식회사 티씨케이 SiC EDGE RING
KR102096787B1 (en) 2019-06-11 2020-04-03 주식회사 바이테크 Manufacturing method for multilayered polycrystalline silicon carbide parts
KR102188258B1 (en) 2020-04-27 2020-12-09 주식회사 바이테크 Manufacturing method for single body and multi-layered polycrystalline silicon carbide parts, polycrystalline silicon carbide parts and shower head for plasma processing chambers
KR102578550B1 (en) * 2021-05-27 2023-09-15 주식회사 티씨케이 Component of semiconductor manufacturing apparatus and preparing method of the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2668477B1 (en) * 1990-10-26 1993-10-22 Propulsion Ste Europeenne REFRACTORY COMPOSITE MATERIAL PROTECTED AGAINST CORROSION, AND METHOD FOR THE PRODUCTION THEREOF.
JPH0662541U (en) * 1993-02-17 1994-09-02 日新電機株式会社 A member for supporting an object to be processed in a plasma processing apparatus
JP4531870B2 (en) * 1997-10-14 2010-08-25 三井造船株式会社 Multilayer silicon carbide wafer
JP3773341B2 (en) * 1997-10-31 2006-05-10 東海カーボン株式会社 SiC coated carbon material
JP4043003B2 (en) * 1998-02-09 2008-02-06 東海カーボン株式会社 SiC molded body and manufacturing method thereof
JP3932154B2 (en) * 1998-10-16 2007-06-20 東海カーボン株式会社 SiC molded body and manufacturing method thereof
JP2002073267A (en) * 2000-08-31 2002-03-12 Canon Inc Coordinate input device
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
JP4769541B2 (en) * 2005-10-27 2011-09-07 トヨタ自動車株式会社 Manufacturing method of semiconductor material
ITTO20070099A1 (en) * 2007-02-09 2008-08-10 St Microelectronics Srl PROCEDURE FOR THE REALIZATION OF AN INTERFACE BETWEEN SILICON CARBIDE AND SILICON OXIDE WITH LOW DENSITY OF STATES
JP5595795B2 (en) * 2009-06-12 2014-09-24 東京エレクトロン株式会社 Method for reusing consumable parts for plasma processing equipment
CN105609509A (en) * 2009-12-04 2016-05-25 株式会社半导体能源研究所 Display device
JP2012049220A (en) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd Plasma resistant member and method for recycling the same
JP5961357B2 (en) * 2011-09-09 2016-08-02 昭和電工株式会社 SiC epitaxial wafer and manufacturing method thereof
CN104641453B (en) * 2012-10-12 2018-03-30 住友电气工业株式会社 Group III nitride composite substrate and its manufacture method and the method for manufacturing Group III nitride semiconductor device
JP2014154666A (en) * 2013-02-07 2014-08-25 Sumitomo Electric Ind Ltd Silicon carbide semiconductor substrate manufacturing method and silicon carbide semiconductor device manufacturing method
US9711334B2 (en) * 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
JP5604577B2 (en) * 2013-10-01 2014-10-08 昭和電工株式会社 SiC epitaxial wafer
KR20150123078A (en) * 2014-04-24 2015-11-03 (주) 휘강지에이치티 Method of manufacturing a focus ring
US9362368B2 (en) * 2014-10-31 2016-06-07 Seiko Epson Corporation Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device
KR102336686B1 (en) * 2014-12-11 2021-12-08 삼성디스플레이 주식회사 Vapor deposition apparatus and vapor deposition method using the same
KR101631797B1 (en) * 2015-04-13 2016-06-20 주식회사 티씨케이 SiC structure for dry etching apparatus and manufacturing method the SiC structure
JP6544166B2 (en) * 2015-09-14 2019-07-17 信越化学工業株式会社 Method of manufacturing SiC composite substrate
KR101650342B1 (en) * 2016-07-06 2016-08-23 부경대학교 산학협력단 Functionally graded dual-nanoparticlate-reinforced aluminum matrix bulk materials and preparation method thereof

Also Published As

Publication number Publication date
KR20180119544A (en) 2018-11-02
CN109564933A (en) 2019-04-02
KR102216867B1 (en) 2021-02-18
KR101914289B1 (en) 2018-11-01
KR101914289B9 (en) 2023-04-20
KR102208252B9 (en) 2023-05-24
KR20190124177A (en) 2019-11-04
KR20190124178A (en) 2019-11-04
US20190206686A1 (en) 2019-07-04
KR20180020912A (en) 2018-02-28
KR20210118014A (en) 2021-09-29
JP2019525495A (en) 2019-09-05
KR102304519B1 (en) 2021-09-27
TW201818544A (en) 2018-05-16
CN109564933B (en) 2020-12-25
TWI668862B (en) 2019-08-11
KR102595804B1 (en) 2023-10-31
KR102208252B1 (en) 2021-01-28
JP6756907B2 (en) 2020-09-16

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