SG11202007542WA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202007542WA
SG11202007542WA SG11202007542WA SG11202007542WA SG11202007542WA SG 11202007542W A SG11202007542W A SG 11202007542WA SG 11202007542W A SG11202007542W A SG 11202007542WA SG 11202007542W A SG11202007542W A SG 11202007542WA SG 11202007542W A SG11202007542W A SG 11202007542WA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202007542WA
Inventor
Kazutake Taniguchi
Hitoshi Maeda
Ryo Ohkubo
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202007542WA publication Critical patent/SG11202007542WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
SG11202007542WA 2018-02-27 2019-02-13 Mask blank, phase shift mask, and method of manufacturing semiconductor device SG11202007542WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018032847 2018-02-27
PCT/JP2019/005030 WO2019167622A1 (en) 2018-02-27 2019-02-13 Mask blank, phase-shift mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11202007542WA true SG11202007542WA (en) 2020-09-29

Family

ID=67805294

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202007542WA SG11202007542WA (en) 2018-02-27 2019-02-13 Mask blank, phase shift mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US11022875B2 (en)
JP (1) JP6759486B2 (en)
KR (1) KR20200123119A (en)
CN (1) CN111742259B (en)
SG (1) SG11202007542WA (en)
TW (1) TWI778231B (en)
WO (1) WO2019167622A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021059890A1 (en) * 2019-09-25 2021-04-01
CN112925164B (en) * 2019-12-06 2024-03-26 长鑫存储技术有限公司 Photomask and forming method thereof
KR102487988B1 (en) * 2020-10-23 2023-01-12 인하대학교 산학협력단 Method and Apparatus for Determining Optical Constant of Attenuated Phase Shifting Layer for the Fabrication Processes of Attenuated Phase-Shift Mask Blank using the Measured and the Calculated Transmittance, Surface Reflectance and Backside Reflectance at a Wavelength Region of the Light Source of the Exposure Process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3301556B2 (en) 1993-07-20 2002-07-15 大日本印刷株式会社 Phase shift photomask blank and phase shift photomask
JP2002258458A (en) * 2000-12-26 2002-09-11 Hoya Corp Halftone phase shift mask and mask blank
TW200528915A (en) * 2004-01-22 2005-09-01 Schott Ag Phase shift mask blank, process for preparation of phase shift mask blank, phase shift photomask and manufacturing method thereof
JP4881633B2 (en) 2006-03-10 2012-02-22 凸版印刷株式会社 Photomask blank for chromeless phase shift mask, chromeless phase shift mask, and method of manufacturing chromeless phase shift mask
WO2015025922A1 (en) * 2013-08-21 2015-02-26 大日本印刷株式会社 Mask blank, mask blank with negative resist film, phase shift mask, and method for producing patterned body using same
JP6380204B2 (en) * 2015-03-31 2018-08-29 信越化学工業株式会社 Halftone phase shift mask blank, halftone phase shift mask and pattern exposure method
JP6266842B2 (en) * 2015-08-31 2018-01-24 Hoya株式会社 Mask blank, mask blank manufacturing method, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method
TWI720752B (en) * 2015-09-30 2021-03-01 日商Ｈｏｙａ股份有限公司 Blank mask, phase shift conversion mask and manufacturing method of semiconductor element
JP6698438B2 (en) 2016-06-17 2020-05-27 Hoya株式会社 Mask blank, transfer mask, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6729508B2 (en) * 2017-06-29 2020-07-22 信越化学工業株式会社 Photomask blank and photomask

Also Published As

Publication number Publication date
TWI778231B (en) 2022-09-21
US11022875B2 (en) 2021-06-01
CN111742259B (en) 2023-05-02
TW202004329A (en) 2020-01-16
JPWO2019167622A1 (en) 2020-12-03
KR20200123119A (en) 2020-10-28
CN111742259A (en) 2020-10-02
US20200409252A1 (en) 2020-12-31
WO2019167622A1 (en) 2019-09-06
JP6759486B2 (en) 2020-09-23

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