SG11202011370VA - Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method - Google Patents
Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing methodInfo
- Publication number
- SG11202011370VA SG11202011370VA SG11202011370VA SG11202011370VA SG11202011370VA SG 11202011370V A SG11202011370V A SG 11202011370VA SG 11202011370V A SG11202011370V A SG 11202011370VA SG 11202011370V A SG11202011370V A SG 11202011370VA SG 11202011370V A SG11202011370V A SG 11202011370VA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- manufacturing
- semiconductor device
- device manufacturing
- mask blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018100362 | 2018-05-25 | ||
| JP2018165247 | 2018-09-04 | ||
| PCT/JP2019/020632 WO2019225736A1 (en) | 2018-05-25 | 2019-05-24 | Reflective mask blank, reflective mask, production method therefor, and semiconductor device production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202011370VA true SG11202011370VA (en) | 2020-12-30 |
Family
ID=68616857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202011370VA SG11202011370VA (en) | 2018-05-25 | 2019-05-24 | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11531264B2 (en) |
| JP (2) | JP7361027B2 (en) |
| KR (1) | KR20210014619A (en) |
| SG (1) | SG11202011370VA (en) |
| TW (2) | TWI835798B (en) |
| WO (1) | WO2019225736A1 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI835798B (en) | 2018-05-25 | 2024-03-21 | 日商Ｈｏｙａ股份有限公司 | Reflective mask substrate, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method |
| EP3921700A1 (en) * | 2019-02-07 | 2021-12-15 | ASML Netherlands B.V. | A patterning device and method of use thereof |
| KR20220122614A (en) * | 2019-12-27 | 2022-09-02 | 에이지씨 가부시키가이샤 | Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and manufacturing method thereof |
| JP6929983B1 (en) * | 2020-03-10 | 2021-09-01 | Hoya株式会社 | Reflective Mask Blanks and Reflective Masks, and Methods for Manufacturing Semiconductor Devices |
| JP7318607B2 (en) | 2020-07-28 | 2023-08-01 | Ａｇｃ株式会社 | Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and manufacturing method thereof |
| KR20230098678A (en) | 2020-11-20 | 2023-07-04 | 엔테그리스, 아이엔씨. | Phase shift reticle for use in photolithography |
| KR102552039B1 (en) * | 2020-12-08 | 2023-07-07 | 주식회사 에스앤에스텍 | Reflective type Blankmask for EUV, and Method for manufacturing the same |
| US11940725B2 (en) * | 2021-01-27 | 2024-03-26 | S&S Tech Co., Ltd. | Phase shift blankmask and photomask for EUV lithography |
| KR102645567B1 (en) * | 2021-02-16 | 2024-03-11 | 에이지씨 가부시키가이샤 | Reflective mask blank for EUV lithography, reflective mask for EUV lithography and method of manufacturing the same |
| JP7295215B2 (en) * | 2021-02-25 | 2023-06-20 | エスアンドエス テック カンパニー リミテッド | Phase-shift blank mask and photomask for extreme ultraviolet lithography |
| US20220283492A1 (en) * | 2021-03-03 | 2022-09-08 | Shin-Etsu Chemical Co., Ltd. | Reflective mask blank and reflective mask |
| WO2023008435A1 (en) * | 2021-07-30 | 2023-02-02 | Ａｇｃ株式会社 | Reflective mask blank, reflective mask, reflective mask blank manufacturing method, and reflective mask manufacturing method |
| KR102649175B1 (en) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | Reflective mask blank, reflective mask, manufacturing method of reflective mask blank, and manufacturing method of reflective mask |
| KR20240008979A (en) | 2021-12-13 | 2024-01-19 | 에이지씨 가부시키가이샤 | Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask |
| WO2023112767A1 (en) * | 2021-12-13 | 2023-06-22 | Ａｇｃ株式会社 | Reflective mask blank, reflective mask, method for producing reflective mask blank, and method for producing reflective mask |
| WO2024029410A1 (en) * | 2022-08-03 | 2024-02-08 | Ａｇｃ株式会社 | Reflective mask blank and reflective mask |
| KR102687761B1 (en) * | 2023-01-25 | 2024-07-24 | 주식회사 알파에이디티 | Photomask blank, photomask manufactured by using the photomask blank and method of fabricating semiconductor device using the photomask |
| JP7557098B1 (en) | 2024-04-11 | 2024-09-26 | 株式会社トッパンフォトマスク | Reflective photomask blank, reflective photomask, and method for producing reflective photomask |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6653053B2 (en) | 2001-08-27 | 2003-11-25 | Motorola, Inc. | Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask |
| JP2004207593A (en) | 2002-12-26 | 2004-07-22 | Toppan Printing Co Ltd | Mask for extreme ultra-violet exposure, blank, and method for pattern transfer |
| US6986974B2 (en) | 2003-10-16 | 2006-01-17 | Freescale Semiconductor, Inc. | Attenuated phase shift mask for extreme ultraviolet lithography and method therefore |
| JP5233321B2 (en) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | Extreme ultraviolet exposure mask blank, extreme ultraviolet exposure mask, extreme ultraviolet exposure mask manufacturing method, and pattern transfer method using extreme ultraviolet exposure mask |
| JP5282507B2 (en) | 2008-09-25 | 2013-09-04 | 凸版印刷株式会社 | Halftone EUV mask, halftone EUV mask manufacturing method, halftone EUV mask blank, and pattern transfer method |
| KR101271644B1 (en) | 2008-11-26 | 2013-07-30 | 호야 가부시키가이샤 | Mask blank substrate |
| JP6460617B2 (en) | 2012-02-10 | 2019-01-30 | Hoya株式会社 | Reflective mask blank, reflective mask manufacturing method, and reflective mask blank manufacturing method |
| JP6561099B2 (en) | 2012-02-10 | 2019-08-14 | Hoya株式会社 | MANUFACTURING METHOD FOR SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK |
| SG10201911502WA (en) * | 2013-09-27 | 2020-02-27 | Hoya Corp | Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
| JP6301127B2 (en) | 2013-12-25 | 2018-03-28 | Hoya株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| JP6381921B2 (en) | 2014-01-30 | 2018-08-29 | Hoya株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| JP6499440B2 (en) * | 2014-12-24 | 2019-04-10 | Hoya株式会社 | Reflective mask blank and reflective mask |
| US10146123B2 (en) | 2014-12-26 | 2018-12-04 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| US9551924B2 (en) * | 2015-02-12 | 2017-01-24 | International Business Machines Corporation | Structure and method for fixing phase effects on EUV mask |
| US10551733B2 (en) | 2015-03-24 | 2020-02-04 | Hoya Corporation | Mask blanks, phase shift mask, and method for manufacturing semiconductor device |
| WO2018074512A1 (en) | 2016-10-21 | 2018-04-26 | Hoya株式会社 | Reflective mask blank, reflective mask production method, and semiconductor device production method |
| TWI835798B (en) | 2018-05-25 | 2024-03-21 | 日商Ｈｏｙａ股份有限公司 | Reflective mask substrate, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method |
-
2019
- 2019-05-24 TW TW108118040A patent/TWI835798B/en active
- 2019-05-24 KR KR1020207027322A patent/KR20210014619A/en not_active Application Discontinuation
- 2019-05-24 US US17/056,713 patent/US11531264B2/en active Active
- 2019-05-24 TW TW113107772A patent/TW202424636A/en unknown
- 2019-05-24 SG SG11202011370VA patent/SG11202011370VA/en unknown
- 2019-05-24 WO PCT/JP2019/020632 patent/WO2019225736A1/en active Application Filing
- 2019-05-24 JP JP2020520391A patent/JP7361027B2/en active Active
-
2022
- 2022-11-18 US US17/990,049 patent/US11815806B2/en active Active
-
2023
- 2023-10-02 JP JP2023171112A patent/JP2023166007A/en active Pending
- 2023-10-09 US US18/483,453 patent/US12111566B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019225736A1 (en) | 2019-11-28 |
| TW202424636A (en) | 2024-06-16 |
| US11531264B2 (en) | 2022-12-20 |
| TWI835798B (en) | 2024-03-21 |
| JP7361027B2 (en) | 2023-10-13 |
| US20210208498A1 (en) | 2021-07-08 |
| US11815806B2 (en) | 2023-11-14 |
| US20230168575A1 (en) | 2023-06-01 |
| KR20210014619A (en) | 2021-02-09 |
| US20240036457A1 (en) | 2024-02-01 |
| JPWO2019225736A1 (en) | 2021-06-10 |
| TW202004327A (en) | 2020-01-16 |
| JP2023166007A (en) | 2023-11-17 |
| US12111566B2 (en) | 2024-10-08 |
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