SG11202107980SA - Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device - Google Patents
Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202107980SA SG11202107980SA SG11202107980SA SG11202107980SA SG11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- manufacturing
- semiconductor device
- same
- mask blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019046108 | 2019-03-13 | ||
| PCT/JP2020/009828 WO2020184473A1 (en) | 2019-03-13 | 2020-03-06 | Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202107980SA true SG11202107980SA (en) | 2021-09-29 |
Family
ID=72427493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202107980SA SG11202107980SA (en) | 2019-03-13 | 2020-03-06 | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20220091498A1 (en) |
| JP (1) | JPWO2020184473A1 (en) |
| KR (1) | KR20210134605A (en) |
| SG (1) | SG11202107980SA (en) |
| TW (1) | TW202044339A (en) |
| WO (1) | WO2020184473A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11829062B2 (en) * | 2020-05-22 | 2023-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV photo masks and manufacturing method thereof |
| JP6966013B1 (en) * | 2020-10-14 | 2021-11-10 | 凸版印刷株式会社 | Manufacturing method of reflective mask and reflective mask |
| KR102660636B1 (en) * | 2021-12-31 | 2024-04-25 | 에스케이엔펄스 주식회사 | Blank mask and photomask using the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3078163B2 (en) * | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | Lithographic reflective mask and reduction projection exposure apparatus |
| JP4212025B2 (en) | 2002-07-04 | 2009-01-21 | Ｈｏｙａ株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING REFLECTIVE MASK |
| WO2006030627A1 (en) * | 2004-09-17 | 2006-03-23 | Asahi Glass Company, Limited | Reflective mask blank for euv lithography and method for producing same |
| JP4926523B2 (en) * | 2006-03-31 | 2012-05-09 | Ｈｏｙａ株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| JP5194888B2 (en) | 2007-09-27 | 2013-05-08 | 凸版印刷株式会社 | REFLECTIVE PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF, REFLECTIVE PHOTOMASK AND MANUFACTURING METHOD THEREOF |
| JP5332741B2 (en) * | 2008-09-25 | 2013-11-06 | 凸版印刷株式会社 | Reflective photomask |
| JP6223756B2 (en) * | 2013-09-10 | 2017-11-01 | Hoya株式会社 | Multilayer reflective film-coated substrate, reflective mask blank for EUV lithography, reflective mask for EUV lithography, method for manufacturing the same, and method for manufacturing a semiconductor device |
| TWI774375B (en) * | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | Extreme ultraviolet mask blank with multilayer absorber and method of manufacture |
| JP6861095B2 (en) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | Method for manufacturing reflective mask blanks, reflective masks and semiconductor devices |
| JP6863169B2 (en) * | 2017-08-15 | 2021-04-21 | Ａｇｃ株式会社 | Reflective mask blank, and reflective mask |
| JP6965833B2 (en) * | 2017-09-21 | 2021-11-10 | Ａｇｃ株式会社 | Manufacturing method of reflective mask blank, reflective mask and reflective mask blank |
| JP7263908B2 (en) * | 2018-06-13 | 2023-04-25 | Ａｇｃ株式会社 | Reflective mask blank, reflective mask, and method for manufacturing reflective mask blank |
-
2020
- 2020-03-06 KR KR1020217020635A patent/KR20210134605A/en unknown
- 2020-03-06 JP JP2021505045A patent/JPWO2020184473A1/ja active Pending
- 2020-03-06 WO PCT/JP2020/009828 patent/WO2020184473A1/en active Application Filing
- 2020-03-06 SG SG11202107980SA patent/SG11202107980SA/en unknown
- 2020-03-06 US US17/423,988 patent/US20220091498A1/en active Pending
- 2020-03-11 TW TW109107948A patent/TW202044339A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202044339A (en) | 2020-12-01 |
| US20220091498A1 (en) | 2022-03-24 |
| KR20210134605A (en) | 2021-11-10 |
| WO2020184473A1 (en) | 2020-09-17 |
| JPWO2020184473A1 (en) | 2020-09-17 |
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