SG11202109059SA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11202109059SA SG11202109059SA SG11202109059SA SG11202109059SA SG11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- mask
- semiconductor device
- mask blank
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019041234 | 2019-03-07 | ||
PCT/JP2020/006731 WO2020179463A1 (en) | 2019-03-07 | 2020-02-20 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202109059SA true SG11202109059SA (en) | 2021-09-29 |
Family
ID=72337913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202109059SA SG11202109059SA (en) | 2019-03-07 | 2020-02-20 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220179300A1 (en) |
JP (1) | JP6818921B2 (en) |
KR (1) | KR20210118885A (en) |
CN (1) | CN113614636A (en) |
SG (1) | SG11202109059SA (en) |
TW (1) | TW202105039A (en) |
WO (1) | WO2020179463A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11300885B2 (en) * | 2018-07-25 | 2022-04-12 | Intel Corporation | EUV phase-shift SRAF masks by means of embedded phase shift layers |
JP7280296B2 (en) * | 2021-02-03 | 2023-05-23 | アルバック成膜株式会社 | Mask blanks and photomasks |
WO2023112767A1 (en) * | 2021-12-13 | 2023-06-22 | Agc株式会社 | Reflective mask blank, reflective mask, method for producing reflective mask blank, and method for producing reflective mask |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5973547A (en) | 1982-10-20 | 1984-04-25 | Asahi Chem Ind Co Ltd | Preparation of iodized aromatic amino compound |
JP4061319B2 (en) * | 2002-04-11 | 2008-03-19 | Hoya株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR MANUFACTURING METHOD |
US7026076B2 (en) * | 2003-03-03 | 2006-04-11 | Freescale Semiconductor, Inc. | Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC |
US20040185674A1 (en) * | 2003-03-17 | 2004-09-23 | Applied Materials, Inc. | Nitrogen-free hard mask over low K dielectric |
JPWO2004090635A1 (en) | 2003-04-09 | 2006-07-06 | Hoya株式会社 | Photomask manufacturing method and photomask blank |
US7365014B2 (en) * | 2004-01-30 | 2008-04-29 | Applied Materials, Inc. | Reticle fabrication using a removable hard mask |
JP5668356B2 (en) * | 2010-08-06 | 2015-02-12 | 大日本印刷株式会社 | Transfer method |
JP6100096B2 (en) * | 2013-05-29 | 2017-03-22 | Hoya株式会社 | Mask blank, phase shift mask, manufacturing method thereof, and manufacturing method of semiconductor device |
JP6389375B2 (en) * | 2013-05-23 | 2018-09-12 | Hoya株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
JP6165871B2 (en) * | 2013-09-10 | 2017-07-19 | Hoya株式会社 | Mask blank, transfer mask and transfer mask manufacturing method |
JP6455979B2 (en) * | 2014-03-18 | 2019-01-23 | Hoya株式会社 | Blank with resist layer, manufacturing method thereof, mask blank and imprint mold blank, transfer mask, imprint mold and manufacturing method thereof |
JP6544943B2 (en) * | 2014-03-28 | 2019-07-17 | Hoya株式会社 | Mask blank, method of manufacturing phase shift mask, phase shift mask, and method of manufacturing semiconductor device |
JP6292581B2 (en) * | 2014-03-30 | 2018-03-14 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
JP6601245B2 (en) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | Photomask blank, photomask manufacturing method, and mask pattern forming method |
JP6158460B1 (en) * | 2015-11-06 | 2017-07-05 | Hoya株式会社 | Mask blank, phase shift mask manufacturing method, and semiconductor device manufacturing method |
WO2017141605A1 (en) * | 2016-02-15 | 2017-08-24 | Hoya株式会社 | Mask blank, method for manufacturing phase-shift mask, and method for manufacturing semiconductor device |
JP6698438B2 (en) * | 2016-06-17 | 2020-05-27 | Hoya株式会社 | Mask blank, transfer mask, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
JP2017227824A (en) * | 2016-06-24 | 2017-12-28 | Hoya株式会社 | Mask blank, manufacturing method of transfer mask, and manufacturing method of semiconductor device |
JP6900873B2 (en) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
KR102429244B1 (en) * | 2017-02-27 | 2022-08-05 | 호야 가부시키가이샤 | Mask blank and manufacturing method of imprint mold |
JP6716629B2 (en) * | 2017-05-18 | 2020-07-01 | エスアンドエス テック カンパニー リミテッド | Phase inversion blank mask and manufacturing method thereof |
EP3415711A1 (en) * | 2017-06-13 | 2018-12-19 | Welltec A/S | Downhole patch setting tool |
-
2020
- 2020-02-20 KR KR1020217026609A patent/KR20210118885A/en not_active Application Discontinuation
- 2020-02-20 US US17/436,506 patent/US20220179300A1/en active Pending
- 2020-02-20 CN CN202080019456.6A patent/CN113614636A/en active Pending
- 2020-02-20 SG SG11202109059SA patent/SG11202109059SA/en unknown
- 2020-02-20 WO PCT/JP2020/006731 patent/WO2020179463A1/en active Application Filing
- 2020-02-25 JP JP2020029168A patent/JP6818921B2/en active Active
- 2020-03-04 TW TW109107053A patent/TW202105039A/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20210118885A (en) | 2021-10-01 |
WO2020179463A1 (en) | 2020-09-10 |
TW202105039A (en) | 2021-02-01 |
JP6818921B2 (en) | 2021-01-27 |
US20220179300A1 (en) | 2022-06-09 |
JP2020149049A (en) | 2020-09-17 |
CN113614636A (en) | 2021-11-05 |
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