SG11202109059SA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Info

Publication number
SG11202109059SA
SG11202109059SA SG11202109059SA SG11202109059SA SG11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA SG 11202109059S A SG11202109059S A SG 11202109059SA
Authority
SG
Singapore
Prior art keywords
manufacturing
mask
semiconductor device
mask blank
manufacturing semiconductor
Prior art date
Application number
SG11202109059SA
Inventor
Hiroaki Shishido
Ryo Ohkubo
Osamu Nozawa
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202109059SA publication Critical patent/SG11202109059SA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202109059SA 2019-03-07 2020-02-20 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device SG11202109059SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019041234 2019-03-07
PCT/JP2020/006731 WO2020179463A1 (en) 2019-03-07 2020-02-20 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11202109059SA true SG11202109059SA (en) 2021-09-29

Family

ID=72337913

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109059SA SG11202109059SA (en) 2019-03-07 2020-02-20 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US20220179300A1 (en)
JP (1) JP6818921B2 (en)
KR (1) KR20210118885A (en)
CN (1) CN113614636A (en)
SG (1) SG11202109059SA (en)
TW (1) TW202105039A (en)
WO (1) WO2020179463A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11300885B2 (en) * 2018-07-25 2022-04-12 Intel Corporation EUV phase-shift SRAF masks by means of embedded phase shift layers
JP7280296B2 (en) * 2021-02-03 2023-05-23 アルバック成膜株式会社 Mask blanks and photomasks
WO2023112767A1 (en) * 2021-12-13 2023-06-22 Agc株式会社 Reflective mask blank, reflective mask, method for producing reflective mask blank, and method for producing reflective mask

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5973547A (en) 1982-10-20 1984-04-25 Asahi Chem Ind Co Ltd Preparation of iodized aromatic amino compound
JP4061319B2 (en) * 2002-04-11 2008-03-19 Hoya株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR MANUFACTURING METHOD
US7026076B2 (en) * 2003-03-03 2006-04-11 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC
US20040185674A1 (en) * 2003-03-17 2004-09-23 Applied Materials, Inc. Nitrogen-free hard mask over low K dielectric
JPWO2004090635A1 (en) 2003-04-09 2006-07-06 Hoya株式会社 Photomask manufacturing method and photomask blank
US7365014B2 (en) * 2004-01-30 2008-04-29 Applied Materials, Inc. Reticle fabrication using a removable hard mask
JP5668356B2 (en) * 2010-08-06 2015-02-12 大日本印刷株式会社 Transfer method
JP6100096B2 (en) * 2013-05-29 2017-03-22 Hoya株式会社 Mask blank, phase shift mask, manufacturing method thereof, and manufacturing method of semiconductor device
JP6389375B2 (en) * 2013-05-23 2018-09-12 Hoya株式会社 Mask blank, transfer mask, and manufacturing method thereof
JP6165871B2 (en) * 2013-09-10 2017-07-19 Hoya株式会社 Mask blank, transfer mask and transfer mask manufacturing method
JP6455979B2 (en) * 2014-03-18 2019-01-23 Hoya株式会社 Blank with resist layer, manufacturing method thereof, mask blank and imprint mold blank, transfer mask, imprint mold and manufacturing method thereof
JP6544943B2 (en) * 2014-03-28 2019-07-17 Hoya株式会社 Mask blank, method of manufacturing phase shift mask, phase shift mask, and method of manufacturing semiconductor device
JP6292581B2 (en) * 2014-03-30 2018-03-14 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6601245B2 (en) * 2015-03-04 2019-11-06 信越化学工業株式会社 Photomask blank, photomask manufacturing method, and mask pattern forming method
JP6158460B1 (en) * 2015-11-06 2017-07-05 Hoya株式会社 Mask blank, phase shift mask manufacturing method, and semiconductor device manufacturing method
WO2017141605A1 (en) * 2016-02-15 2017-08-24 Hoya株式会社 Mask blank, method for manufacturing phase-shift mask, and method for manufacturing semiconductor device
JP6698438B2 (en) * 2016-06-17 2020-05-27 Hoya株式会社 Mask blank, transfer mask, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method
JP2017227824A (en) * 2016-06-24 2017-12-28 Hoya株式会社 Mask blank, manufacturing method of transfer mask, and manufacturing method of semiconductor device
JP6900873B2 (en) * 2016-12-26 2021-07-07 信越化学工業株式会社 Photomask blank and its manufacturing method
KR102429244B1 (en) * 2017-02-27 2022-08-05 호야 가부시키가이샤 Mask blank and manufacturing method of imprint mold
JP6716629B2 (en) * 2017-05-18 2020-07-01 エスアンドエス テック カンパニー リミテッド Phase inversion blank mask and manufacturing method thereof
EP3415711A1 (en) * 2017-06-13 2018-12-19 Welltec A/S Downhole patch setting tool

Also Published As

Publication number Publication date
KR20210118885A (en) 2021-10-01
WO2020179463A1 (en) 2020-09-10
TW202105039A (en) 2021-02-01
JP6818921B2 (en) 2021-01-27
US20220179300A1 (en) 2022-06-09
JP2020149049A (en) 2020-09-17
CN113614636A (en) 2021-11-05

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