SG11202110115VA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11202110115VA SG11202110115VA SG11202110115VA SG11202110115VA SG11202110115VA SG 11202110115V A SG11202110115V A SG 11202110115VA SG 11202110115V A SG11202110115V A SG 11202110115VA SG 11202110115V A SG11202110115V A SG 11202110115VA SG 11202110115V A SG11202110115V A SG 11202110115VA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- mask
- semiconductor device
- mask blank
- manufacturing semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
- G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019050514A JP7313166B2 (en) | 2019-03-18 | 2019-03-18 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| PCT/JP2020/006732 WO2020189168A1 (en) | 2019-03-18 | 2020-02-20 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202110115VA true SG11202110115VA (en) | 2021-10-28 |
Family
ID=72520242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202110115VA SG11202110115VA (en) | 2019-03-18 | 2020-02-20 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220214608A1 (en) |
| JP (2) | JP7313166B2 (en) |
| KR (1) | KR20210136114A (en) |
| CN (1) | CN113614637A (en) |
| SG (1) | SG11202110115VA (en) |
| TW (1) | TW202040258A (en) |
| WO (1) | WO2020189168A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102583075B1 (en) * | 2021-01-27 | 2023-09-27 | 주식회사 에스앤에스텍 | Phase Shift Blankmask and Photomask for EUV lithography |
| JP7280296B2 (en) * | 2021-02-03 | 2023-05-23 | アルバック成膜株式会社 | Mask blanks and photomasks |
| CN115876823B (en) * | 2023-01-19 | 2023-07-14 | 合肥晶合集成电路股份有限公司 | Film defect detection method, film defect detection device and detection system |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040185674A1 (en) * | 2003-03-17 | 2004-09-23 | Applied Materials, Inc. | Nitrogen-free hard mask over low K dielectric |
| TWI259329B (en) * | 2003-04-09 | 2006-08-01 | Hoya Corp | Method of manufacturing a photomask, and photomask blank |
| KR101485754B1 (en) * | 2008-09-26 | 2015-01-26 | 주식회사 에스앤에스텍 | Blank mask for euv and photomask manufactured thereof |
| JP6100096B2 (en) * | 2013-05-29 | 2017-03-22 | Hoya株式会社 | Mask blank, phase shift mask, manufacturing method thereof, and manufacturing method of semiconductor device |
| KR102390253B1 (en) * | 2013-01-15 | 2022-04-22 | 호야 가부시키가이샤 | Mask blank, phase-shift mask, and method for manufacturing semiconductor device |
| JP6258151B2 (en) * | 2013-09-25 | 2018-01-10 | 信越化学工業株式会社 | Photomask blank and manufacturing method thereof |
| KR101567057B1 (en) * | 2013-11-15 | 2015-11-09 | 주식회사 에스앤에스텍 | Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same |
| KR20160002332A (en) * | 2014-06-30 | 2016-01-07 | 주식회사 에스앤에스텍 | Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same |
| WO2016140044A1 (en) * | 2015-03-04 | 2016-09-09 | 信越化学工業株式会社 | Photomask blank, method for manufacturing photomask, and mask pattern formation method |
| JP6601245B2 (en) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | Photomask blank, photomask manufacturing method, and mask pattern forming method |
| TWI684822B (en) * | 2015-09-30 | 2020-02-11 | 日商Ｈｏｙａ股份有限公司 | Blank mask, phase shift mask and method for manufacturing semiconductor element |
| SG10201908855RA (en) | 2015-11-06 | 2019-10-30 | Hoya Corp | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| US20190040516A1 (en) * | 2016-02-15 | 2019-02-07 | Hoya Corporation | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| JP6698438B2 (en) * | 2016-06-17 | 2020-05-27 | Hoya株式会社 | Mask blank, transfer mask, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP2017227824A (en) * | 2016-06-24 | 2017-12-28 | Hoya株式会社 | Mask blank, manufacturing method of transfer mask, and manufacturing method of semiconductor device |
| JP6900873B2 (en) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
| KR102429244B1 (en) * | 2017-02-27 | 2022-08-05 | 호야 가부시키가이샤 | Mask blank and manufacturing method of imprint mold |
| JP6791031B2 (en) * | 2017-06-13 | 2020-11-25 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
-
2019
- 2019-03-18 JP JP2019050514A patent/JP7313166B2/en active Active
-
2020
- 2020-02-20 US US17/438,194 patent/US20220214608A1/en active Pending
- 2020-02-20 KR KR1020217032751A patent/KR20210136114A/en unknown
- 2020-02-20 CN CN202080022142.1A patent/CN113614637A/en active Pending
- 2020-02-20 SG SG11202110115VA patent/SG11202110115VA/en unknown
- 2020-02-20 WO PCT/JP2020/006732 patent/WO2020189168A1/en active Application Filing
- 2020-03-04 TW TW109107052A patent/TW202040258A/en unknown
-
2023
- 2023-07-06 JP JP2023111188A patent/JP2023145473A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202040258A (en) | 2020-11-01 |
| KR20210136114A (en) | 2021-11-16 |
| WO2020189168A1 (en) | 2020-09-24 |
| CN113614637A (en) | 2021-11-05 |
| JP2020154054A (en) | 2020-09-24 |
| JP2023145473A (en) | 2023-10-11 |
| JP7313166B2 (en) | 2023-07-24 |
| US20220214608A1 (en) | 2022-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11202106508PA (en) | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
| SG11202011370VA (en) | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method | |
| SG11202011373SA (en) | Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
| SG10201911900YA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| EP4068387A4 (en) | Semiconductor device, method for manufacturing same, and use thereof | |
| SG10202000604QA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
| SG10202103395QA (en) | Mask blank, method for producing transfer mask and method for producing semiconductor device | |
| SG11202110115VA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| SG10202009397WA (en) | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
| SG10202004731SA (en) | Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device | |
| SG11202007975QA (en) | Mask blank, phase shift mask, and method for manufacturing semiconductor device | |
| SG10201907414TA (en) | Mask layout, semiconductor device and manufacturing method using the same | |
| SG11202109419WA (en) | Dry etching method, method for manufacturing semiconductor device, and etching device | |
| SG11202004856XA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG11202109240PA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG11202109059SA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| SG11202009172VA (en) | Mask blank, phase shift mask, and method for manufacturing semiconductor device | |
| SG11202101338UA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| EP4203000A4 (en) | Manufacturing method for semiconductor device, and semiconductor device | |
| SG11202007994YA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11202007542WA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11202102268VA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
| SG11202002544SA (en) | Mask blank, transfer mask, and method for manufacturing semiconductor device | |
| SG10201701374PA (en) | Method for starting up flim forming apparatus, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| SG10202112818PA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |