SG10202103395QA - Mask blank, method for producing transfer mask and method for producing semiconductor device - Google Patents
Mask blank, method for producing transfer mask and method for producing semiconductor deviceInfo
- Publication number
- SG10202103395QA SG10202103395QA SG10202103395QA SG10202103395QA SG10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA
- Authority
- SG
- Singapore
- Prior art keywords
- producing
- mask
- semiconductor device
- mask blank
- transfer mask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017116510 | 2017-06-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202103395QA true SG10202103395QA (en) | 2021-05-28 |
Family
ID=64660555
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201912030PA SG11201912030PA (en) | 2017-06-14 | 2018-05-16 | Mask blank, phase shift mask and method for manufacturing semiconductor device |
| SG10202103395QA SG10202103395QA (en) | 2017-06-14 | 2018-05-16 | Mask blank, method for producing transfer mask and method for producing semiconductor device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201912030PA SG11201912030PA (en) | 2017-06-14 | 2018-05-16 | Mask blank, phase shift mask and method for manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11048160B2 (en) |
| JP (2) | JP6506449B2 (en) |
| KR (1) | KR102592274B1 (en) |
| CN (1) | CN110770652B (en) |
| SG (2) | SG11201912030PA (en) |
| TW (2) | TWI744533B (en) |
| WO (1) | WO2018230233A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7303077B2 (en) * | 2019-09-10 | 2023-07-04 | アルバック成膜株式会社 | Method for manufacturing mask blanks, method for manufacturing photomask, mask blanks and photomask |
| TWI707195B (en) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing phase-shifting photomask |
| JP7354032B2 (en) * | 2020-03-19 | 2023-10-02 | Hoya株式会社 | Mask blank, transfer mask, and semiconductor device manufacturing method |
| CN112666789B (en) * | 2020-12-02 | 2024-05-24 | 湖南普照信息材料有限公司 | Attenuation type high-uniformity phase shift photomask blank and preparation method thereof |
| JP7375065B2 (en) * | 2022-02-24 | 2023-11-07 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and display device manufacturing method |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3445329B2 (en) | 1993-11-02 | 2003-09-08 | Ｈｏｙａ株式会社 | Halftone type phase shift mask and halftone type phase shift mask blank |
| KR101511926B1 (en) | 2003-04-09 | 2015-04-13 | 호야 가부시키가이샤 | Method of producing photomask and photomask blank |
| JP4405443B2 (en) | 2004-10-22 | 2010-01-27 | 信越化学工業株式会社 | Photomask blank, photomask, and manufacturing method thereof |
| TWI375114B (en) | 2004-10-22 | 2012-10-21 | Shinetsu Chemical Co | Photomask-blank, photomask and fabrication method thereof |
| DE602006021102D1 (en) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomask blank, photomask and their manufacturing process |
| JP4764214B2 (en) | 2006-03-10 | 2011-08-31 | 凸版印刷株式会社 | Halftone phase shift mask and manufacturing method thereof |
| JP4509050B2 (en) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
| KR100972860B1 (en) | 2007-09-18 | 2010-07-28 | 주식회사 하이닉스반도체 | Method for fabricating in photo mask |
| JP2009265508A (en) * | 2008-04-28 | 2009-11-12 | Sharp Corp | Photomask, method of correcting photomask, method of correcting photomask shape, method of manufacturing photomask and exposure transfer method |
| JP5702920B2 (en) * | 2008-06-25 | 2015-04-15 | Hoya株式会社 | Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank |
| JP5558359B2 (en) * | 2008-09-30 | 2014-07-23 | Ｈｏｙａ株式会社 | Photomask blank, photomask and method for manufacturing the same, and method for manufacturing a semiconductor device |
| JP5653888B2 (en) * | 2010-12-17 | 2015-01-14 | Hoya株式会社 | Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP6058318B2 (en) | 2011-09-14 | 2017-01-11 | Hoya株式会社 | Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
| WO2014010408A1 (en) * | 2012-07-13 | 2014-01-16 | Hoya株式会社 | Mask blank and method for manufacturing phase-shift mask |
| JP6324756B2 (en) | 2013-03-19 | 2018-05-16 | Hoya株式会社 | Phase shift mask blank and method for manufacturing the same, method for manufacturing phase shift mask, and method for manufacturing display device |
| JP5686216B1 (en) | 2013-08-20 | 2015-03-18 | 大日本印刷株式会社 | Mask blank, phase shift mask, and manufacturing method thereof |
| JP5837257B2 (en) * | 2013-09-24 | 2015-12-24 | Hoya株式会社 | Mask blank, transfer mask and transfer mask manufacturing method |
| JP6229466B2 (en) | 2013-12-06 | 2017-11-15 | 信越化学工業株式会社 | Photomask blank |
| KR101504557B1 (en) | 2014-03-23 | 2015-03-20 | 주식회사 에스앤에스텍 | Blankmask and Photomask using the same |
| JP5779290B1 (en) * | 2014-03-28 | 2015-09-16 | Hoya株式会社 | Mask blank, phase shift mask manufacturing method, phase shift mask, and semiconductor device manufacturing method |
| JP6544943B2 (en) * | 2014-03-28 | 2019-07-17 | Hoya株式会社 | Mask blank, method of manufacturing phase shift mask, phase shift mask, and method of manufacturing semiconductor device |
| JP6292581B2 (en) * | 2014-03-30 | 2018-03-14 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP6150299B2 (en) * | 2014-03-30 | 2017-06-21 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP6104852B2 (en) * | 2014-07-14 | 2017-03-29 | Hoya株式会社 | Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method |
| KR102261621B1 (en) * | 2014-12-26 | 2021-06-04 | 호야 가부시키가이샤 | Mask blank, phase-shift mask, method for manufacturing phase-shift mask and method for manufacturing semiconductor device |
| JP6477159B2 (en) | 2015-03-31 | 2019-03-06 | 信越化学工業株式会社 | Halftone phase shift mask blank and method of manufacturing halftone phase shift mask blank |
| JP6544964B2 (en) * | 2015-03-31 | 2019-07-17 | Hoya株式会社 | Mask blank, method of manufacturing phase shift mask, and method of manufacturing semiconductor device |
| JP6087401B2 (en) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
| TWI684822B (en) | 2015-09-30 | 2020-02-11 | 日商Ｈｏｙａ股份有限公司 | Blank mask, phase shift mask and method for manufacturing semiconductor element |
| JP6271780B2 (en) | 2017-02-01 | 2018-01-31 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
-
2018
- 2018-05-16 SG SG11201912030PA patent/SG11201912030PA/en unknown
- 2018-05-16 SG SG10202103395QA patent/SG10202103395QA/en unknown
- 2018-05-16 CN CN201880039083.1A patent/CN110770652B/en active Active
- 2018-05-16 KR KR1020197035396A patent/KR102592274B1/en active IP Right Grant
- 2018-05-16 US US16/622,802 patent/US11048160B2/en active Active
- 2018-05-16 WO PCT/JP2018/018872 patent/WO2018230233A1/en active Application Filing
- 2018-05-25 JP JP2018100930A patent/JP6506449B2/en active Active
- 2018-06-12 TW TW107120116A patent/TWI744533B/en active
- 2018-06-12 TW TW110136182A patent/TWI784733B/en active
-
2019
- 2019-03-28 JP JP2019062521A patent/JP7029423B2/en active Active
-
2021
- 2021-05-27 US US17/331,955 patent/US20210286254A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW202205006A (en) | 2022-02-01 |
| JP2019003178A (en) | 2019-01-10 |
| KR102592274B1 (en) | 2023-10-23 |
| CN110770652B (en) | 2023-03-21 |
| US20210286254A1 (en) | 2021-09-16 |
| JP2019133178A (en) | 2019-08-08 |
| TWI744533B (en) | 2021-11-01 |
| KR20200017399A (en) | 2020-02-18 |
| JP7029423B2 (en) | 2022-03-03 |
| SG11201912030PA (en) | 2020-01-30 |
| TW201921090A (en) | 2019-06-01 |
| TWI784733B (en) | 2022-11-21 |
| JP6506449B2 (en) | 2019-04-24 |
| CN110770652A (en) | 2020-02-07 |
| US11048160B2 (en) | 2021-06-29 |
| US20210149293A1 (en) | 2021-05-20 |
| WO2018230233A1 (en) | 2018-12-20 |
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