SG11202004856XA - Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device - Google Patents

Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Info

Publication number
SG11202004856XA
SG11202004856XA SG11202004856XA SG11202004856XA SG11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
same
mask blank
Prior art date
Application number
SG11202004856XA
Inventor
Yohei IKEBE
Takahiro Onoue
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202004856XA publication Critical patent/SG11202004856XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Thin Film Transistor (AREA)
SG11202004856XA 2017-11-27 2018-11-21 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device SG11202004856XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017226812A JP6845122B2 (en) 2017-11-27 2017-11-27 Reflective mask blank, reflective mask and its manufacturing method, and semiconductor device manufacturing method
PCT/JP2018/042942 WO2019103024A1 (en) 2017-11-27 2018-11-21 Reflective mask blank, reflective mask and method for producing same, and method for producing semiconductor device

Publications (1)

Publication Number Publication Date
SG11202004856XA true SG11202004856XA (en) 2020-06-29

Family

ID=66632003

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202004856XA SG11202004856XA (en) 2017-11-27 2018-11-21 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US20200371421A1 (en)
JP (1) JP6845122B2 (en)
KR (1) KR20200088283A (en)
SG (1) SG11202004856XA (en)
TW (1) TWI801455B (en)
WO (1) WO2019103024A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021056502A (en) * 2019-09-30 2021-04-08 Hoya株式会社 Substrate with multi-layered reflecting film, reflective mask blank, reflective mask and method for manufacturing the same, and method for manufacturing semiconductor device
DE102020213307A1 (en) * 2020-10-21 2022-04-21 Asml Netherlands B.V. Binary intensity mask for the EUV spectral range
KR102583075B1 (en) * 2021-01-27 2023-09-27 주식회사 에스앤에스텍 Phase Shift Blankmask and Photomask for EUV lithography
TW202246879A (en) * 2021-02-09 2022-12-01 美商應用材料股份有限公司 Extreme ultraviolet mask blank structure
KR102649175B1 (en) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 Reflective mask blank, reflective mask, manufacturing method of reflective mask blank, and manufacturing method of reflective mask
WO2024154535A1 (en) * 2023-01-16 2024-07-25 Ａｇｃ株式会社 Reflective mask blank, reflective mask, and method for manufacturing reflective mask

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100455383B1 (en) * 2002-04-18 2004-11-06 삼성전자주식회사 Reflection photomask, method of fabricating reflection photomask and method of fabricating integrated circuit using the same
JP4212025B2 (en) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING REFLECTIVE MASK
JP2004207593A (en) * 2002-12-26 2004-07-22 Toppan Printing Co Ltd Mask for extreme ultra-violet exposure, blank, and method for pattern transfer
DE102005027697A1 (en) * 2005-06-15 2006-12-28 Infineon Technologies Ag Extreme ultraviolet mask e.g. absorber mask having elevated sections and trenches, includes substrate with low coefficient of thermal expansion, multilayer and capping layer, where elevated sections are formed on continuous conductive layer
JP4923923B2 (en) * 2006-09-28 2012-04-25 凸版印刷株式会社 Extreme ultraviolet exposure mask and semiconductor integrated circuit manufacturing method using the same
JP5373298B2 (en) * 2008-03-04 2013-12-18 株式会社日立ハイテクサイエンス EUVL mask processing method
JP5282507B2 (en) * 2008-09-25 2013-09-04 凸版印刷株式会社 Halftone EUV mask, halftone EUV mask manufacturing method, halftone EUV mask blank, and pattern transfer method
JP5943306B2 (en) * 2012-10-30 2016-07-05 大日本印刷株式会社 Method for manufacturing reflective mask and method for manufacturing mask blank
JP5716146B1 (en) * 2013-09-18 2015-05-13 Hoya株式会社 REFLECTIVE MASK BLANK AND MANUFACTURING METHOD THEREFOR, REFLECTIVE MASK AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
WO2016185941A1 (en) * 2015-05-15 2016-11-24 Hoya株式会社 Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
JP6852281B2 (en) * 2016-05-13 2021-03-31 凸版印刷株式会社 Reflective photomask

Also Published As

Publication number Publication date
JP6845122B2 (en) 2021-03-17
JP2019095691A (en) 2019-06-20
US20200371421A1 (en) 2020-11-26
WO2019103024A1 (en) 2019-05-31
TW201928505A (en) 2019-07-16
KR20200088283A (en) 2020-07-22
TWI801455B (en) 2023-05-11

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