SG11202004856XA - Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device - Google Patents
Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202004856XA SG11202004856XA SG11202004856XA SG11202004856XA SG11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA SG 11202004856X A SG11202004856X A SG 11202004856XA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- manufacturing
- semiconductor device
- same
- mask blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Thin Film Transistor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017226812A JP6845122B2 (en) | 2017-11-27 | 2017-11-27 | Reflective mask blank, reflective mask and its manufacturing method, and semiconductor device manufacturing method |
PCT/JP2018/042942 WO2019103024A1 (en) | 2017-11-27 | 2018-11-21 | Reflective mask blank, reflective mask and method for producing same, and method for producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202004856XA true SG11202004856XA (en) | 2020-06-29 |
Family
ID=66632003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202004856XA SG11202004856XA (en) | 2017-11-27 | 2018-11-21 | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US20200371421A1 (en) |
JP (1) | JP6845122B2 (en) |
KR (1) | KR20200088283A (en) |
SG (1) | SG11202004856XA (en) |
TW (1) | TWI801455B (en) |
WO (1) | WO2019103024A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020213307A1 (en) * | 2020-10-21 | 2022-04-21 | Asml Netherlands B.V. | Binary intensity mask for the EUV spectral range |
KR102583075B1 (en) * | 2021-01-27 | 2023-09-27 | 주식회사 에스앤에스텍 | Phase Shift Blankmask and Photomask for EUV lithography |
TW202246879A (en) * | 2021-02-09 | 2022-12-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask blank structure |
KR102649175B1 (en) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | Reflective mask blank, reflective mask, manufacturing method of reflective mask blank, and manufacturing method of reflective mask |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100455383B1 (en) * | 2002-04-18 | 2004-11-06 | 삼성전자주식회사 | Reflection photomask, method of fabricating reflection photomask and method of fabricating integrated circuit using the same |
JP4212025B2 (en) | 2002-07-04 | 2009-01-21 | Hoya株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING REFLECTIVE MASK |
JP2004207593A (en) * | 2002-12-26 | 2004-07-22 | Toppan Printing Co Ltd | Mask for extreme ultra-violet exposure, blank, and method for pattern transfer |
DE102005027697A1 (en) * | 2005-06-15 | 2006-12-28 | Infineon Technologies Ag | Extreme ultraviolet mask e.g. absorber mask having elevated sections and trenches, includes substrate with low coefficient of thermal expansion, multilayer and capping layer, where elevated sections are formed on continuous conductive layer |
JP4923923B2 (en) * | 2006-09-28 | 2012-04-25 | 凸版印刷株式会社 | Extreme ultraviolet exposure mask and semiconductor integrated circuit manufacturing method using the same |
JP5373298B2 (en) * | 2008-03-04 | 2013-12-18 | 株式会社日立ハイテクサイエンス | EUVL mask processing method |
JP5282507B2 (en) * | 2008-09-25 | 2013-09-04 | 凸版印刷株式会社 | Halftone EUV mask, halftone EUV mask manufacturing method, halftone EUV mask blank, and pattern transfer method |
JP5943306B2 (en) * | 2012-10-30 | 2016-07-05 | 大日本印刷株式会社 | Method for manufacturing reflective mask and method for manufacturing mask blank |
US9726969B2 (en) * | 2013-09-18 | 2017-08-08 | Hoya Corporation | Reflective mask blank, method of manufacturing same, reflective mask and method of manufacturing semiconductor device |
KR102625449B1 (en) * | 2015-05-15 | 2024-01-16 | 호야 가부시키가이샤 | Mask blank, mask blank manufacturing method, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
JP6852281B2 (en) * | 2016-05-13 | 2021-03-31 | 凸版印刷株式会社 | Reflective photomask |
-
2017
- 2017-11-27 JP JP2017226812A patent/JP6845122B2/en active Active
-
2018
- 2018-11-21 WO PCT/JP2018/042942 patent/WO2019103024A1/en active Application Filing
- 2018-11-21 SG SG11202004856XA patent/SG11202004856XA/en unknown
- 2018-11-21 KR KR1020207008516A patent/KR20200088283A/en not_active Application Discontinuation
- 2018-11-21 US US16/763,742 patent/US20200371421A1/en not_active Abandoned
- 2018-11-27 TW TW107142218A patent/TWI801455B/en active
Also Published As
Publication number | Publication date |
---|---|
TW201928505A (en) | 2019-07-16 |
WO2019103024A1 (en) | 2019-05-31 |
JP6845122B2 (en) | 2021-03-17 |
JP2019095691A (en) | 2019-06-20 |
TWI801455B (en) | 2023-05-11 |
KR20200088283A (en) | 2020-07-22 |
US20200371421A1 (en) | 2020-11-26 |
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