SG11201807251SA - Reflective mask blank, reflective mask and method of manufacturing semiconductor device - Google Patents
Reflective mask blank, reflective mask and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201807251SA SG11201807251SA SG11201807251SA SG11201807251SA SG11201807251SA SG 11201807251S A SG11201807251S A SG 11201807251SA SG 11201807251S A SG11201807251S A SG 11201807251SA SG 11201807251S A SG11201807251S A SG 11201807251SA SG 11201807251S A SG11201807251S A SG 11201807251SA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- semiconductor device
- manufacturing semiconductor
- mask blank
- blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016064269A JP6739960B2 (en) | 2016-03-28 | 2016-03-28 | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
| PCT/JP2017/009721 WO2017169658A1 (en) | 2016-03-28 | 2017-03-10 | Reflective mask blank, reflective mask and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201807251SA true SG11201807251SA (en) | 2018-09-27 |
Family
ID=59963180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201807251SA SG11201807251SA (en) | 2016-03-28 | 2017-03-10 | Reflective mask blank, reflective mask and method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10871707B2 (en) |
| JP (1) | JP6739960B2 (en) |
| KR (2) | KR102352732B1 (en) |
| SG (1) | SG11201807251SA (en) |
| TW (2) | TWI775442B (en) |
| WO (1) | WO2017169658A1 (en) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI774375B (en) | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | Extreme ultraviolet mask blank with multilayer absorber and method of manufacture |
| US10468149B2 (en) * | 2017-02-03 | 2019-11-05 | Globalfoundries Inc. | Extreme ultraviolet mirrors and masks with improved reflectivity |
| JP6861095B2 (en) | 2017-03-03 | 2021-04-21 | Hoya株式会社 | Method for manufacturing reflective mask blanks, reflective masks and semiconductor devices |
| KR20240025717A (en) | 2017-03-03 | 2024-02-27 | 호야 가부시키가이샤 | Reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| TWI811369B (en) * | 2018-05-25 | 2023-08-11 | 日商Ｈｏｙａ股份有限公司 | Reflective photomask base, reflective photomask, method for manufacturing reflective photomask and semiconductor device |
| KR20200034500A (en) * | 2018-09-21 | 2020-03-31 | 삼성전자주식회사 | Multi-layer structure and phase shift device using the multi-layer structure |
| TW202026770A (en) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | Ta-cu alloy material for extreme ultraviolet mask absorber |
| TW202028495A (en) | 2018-12-21 | 2020-08-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber and processes for manufacture |
| JP7250511B2 (en) | 2018-12-27 | 2023-04-03 | Hoya株式会社 | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
| TW202035792A (en) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TWI828843B (en) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | Extreme ultraviolet (euv) mask blanks and methods of manufacturing the same |
| KR102214777B1 (en) * | 2019-03-18 | 2021-02-10 | 한양대학교 산학협력단 | EUV lithography mask, and fabricating method of the same |
| TW202104666A (en) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| TW202111420A (en) | 2019-05-22 | 2021-03-16 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| TW202104667A (en) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| US11366379B2 (en) | 2019-05-22 | 2022-06-21 | Applied Materials Inc. | Extreme ultraviolet mask with embedded absorber layer |
| US11275303B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
| US11385536B2 (en) * | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
| JP6929340B2 (en) * | 2019-11-21 | 2021-09-01 | Hoya株式会社 | Reflective Mask Blanks and Reflective Masks, and Methods for Manufacturing Semiconductor Devices |
| WO2021132111A1 (en) * | 2019-12-27 | 2021-07-01 | Ａｇｃ株式会社 | Reflective mask blank for euv lithography, reflective mask for euv lithography, and method for manufacturing mask blank and mask |
| US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TWI817073B (en) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask blank hard mask materials |
| TW202129401A (en) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask blank hard mask materials |
| TW202131087A (en) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| TW202141165A (en) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| US11644741B2 (en) | 2020-04-17 | 2023-05-09 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TW202202641A (en) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | Extreme ultraviolet mask absorber materials |
| US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11940725B2 (en) | 2021-01-27 | 2024-03-26 | S&S Tech Co., Ltd. | Phase shift blankmask and photomask for EUV lithography |
| US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| JP2022137972A (en) * | 2021-03-09 | 2022-09-22 | 株式会社トッパンフォトマスク | Phase-shift mask blank, phase-shift mask, method of manufacturing phase-shift mask, and method of modifying phase-shift mask |
| KR20220168108A (en) * | 2021-06-15 | 2022-12-22 | 에스케이하이닉스 주식회사 | Phase shift mask for EUV lithography and manufacturing methods for the same |
| US20230069583A1 (en) * | 2021-08-27 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for an euv lithography mask and a method of manufacturing thereof |
| WO2023190696A1 (en) * | 2022-03-29 | 2023-10-05 | 株式会社トッパンフォトマスク | Reflective photomask blank and reflective photomask |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233321B1 (en) | 1971-07-10 | 1977-08-27 | ||
| JP2004207593A (en) | 2002-12-26 | 2004-07-22 | Toppan Printing Co Ltd | Mask for extreme ultra-violet exposure, blank, and method for pattern transfer |
| JP2006228766A (en) | 2005-02-15 | 2006-08-31 | Toppan Printing Co Ltd | Mask for extreme ultraviolet ray exposure, mask blank, and exposure method |
| JP5294227B2 (en) | 2006-09-15 | 2013-09-18 | Ｈｏｙａ株式会社 | Mask blank and transfer mask manufacturing method |
| JP5476679B2 (en) | 2007-09-26 | 2014-04-23 | 凸版印刷株式会社 | Halftone EUV mask and method of manufacturing halftone EUV mask |
| JP5233321B2 (en) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | Extreme ultraviolet exposure mask blank, extreme ultraviolet exposure mask, extreme ultraviolet exposure mask manufacturing method, and pattern transfer method using extreme ultraviolet exposure mask |
| JP5282507B2 (en) * | 2008-09-25 | 2013-09-04 | 凸版印刷株式会社 | Halftone EUV mask, halftone EUV mask manufacturing method, halftone EUV mask blank, and pattern transfer method |
| JP2010109336A (en) | 2008-10-04 | 2010-05-13 | Hoya Corp | Method of manufacturing reflective mask |
| JP5372455B2 (en) * | 2008-10-04 | 2013-12-18 | Ｈｏｙａ株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND MANUFACTURING METHOD THEREOF |
| KR101663842B1 (en) * | 2008-11-27 | 2016-10-07 | 호야 가부시키가이샤 | Substrate with multilayer reflection film, reflective mask blank and method for manufacturing reflective mask blank |
| US9229316B2 (en) | 2012-03-28 | 2016-01-05 | Hoya Corporation | Method for producing substrate with multilayer reflective film, method for producing reflective mask blank and method for producing reflective mask |
| KR102110845B1 (en) * | 2012-07-31 | 2020-05-14 | 호야 가부시키가이샤 | Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device |
| TWI625592B (en) * | 2012-12-28 | 2018-06-01 | Hoya Corp | Substrate for substrate material, substrate with multilayer reflective film, reflective mask material, reflective mask, method for manufacturing substrate for mask material, method for manufacturing substrate with multilayer reflective film, and method for manufacturing semiconductor device |
| WO2015041023A1 (en) | 2013-09-18 | 2015-03-26 | Hoya株式会社 | Reflective mask blank and method for manufacturing same, reflective mask, and method for manufacturing semiconductor device |
| JP6301127B2 (en) * | 2013-12-25 | 2018-03-28 | Hoya株式会社 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
-
2016
- 2016-03-28 JP JP2016064269A patent/JP6739960B2/en active Active
-
2017
- 2017-03-10 KR KR1020187030286A patent/KR102352732B1/en active IP Right Grant
- 2017-03-10 SG SG11201807251SA patent/SG11201807251SA/en unknown
- 2017-03-10 US US16/084,698 patent/US10871707B2/en active Active
- 2017-03-10 KR KR1020227001343A patent/KR102479274B1/en active IP Right Grant
- 2017-03-10 WO PCT/JP2017/009721 patent/WO2017169658A1/en active Application Filing
- 2017-03-24 TW TW110118052A patent/TWI775442B/en active
- 2017-03-24 TW TW106109866A patent/TWI730071B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017169658A1 (en) | 2017-10-05 |
| TW202134776A (en) | 2021-09-16 |
| JP6739960B2 (en) | 2020-08-12 |
| TW201800831A (en) | 2018-01-01 |
| KR102479274B1 (en) | 2022-12-20 |
| TWI775442B (en) | 2022-08-21 |
| US20190079383A1 (en) | 2019-03-14 |
| JP2017181571A (en) | 2017-10-05 |
| KR102352732B1 (en) | 2022-01-19 |
| KR20180129838A (en) | 2018-12-05 |
| KR20220012412A (en) | 2022-02-03 |
| US10871707B2 (en) | 2020-12-22 |
| TWI730071B (en) | 2021-06-11 |
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