SG11202002544SA - Mask blank, transfer mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, transfer mask, and method for manufacturing semiconductor device

Info

Publication number
SG11202002544SA
SG11202002544SA SG11202002544SA SG11202002544SA SG11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
manufacturing semiconductor
transfer
mask blank
Prior art date
Application number
SG11202002544SA
Inventor
Hitoshi Maeda
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202002544SA publication Critical patent/SG11202002544SA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • G01N23/2258Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202002544SA 2017-09-21 2018-09-06 Mask blank, transfer mask, and method for manufacturing semiconductor device SG11202002544SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017181304 2017-09-21
PCT/JP2018/033015 WO2019058984A1 (en) 2017-09-21 2018-09-06 Mask blank, transfer mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11202002544SA true SG11202002544SA (en) 2020-04-29

Family

ID=65809722

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002544SA SG11202002544SA (en) 2017-09-21 2018-09-06 Mask blank, transfer mask, and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US20200285144A1 (en)
JP (2) JP6552700B2 (en)
KR (1) KR20200054272A (en)
CN (1) CN111133379B (en)
SG (1) SG11202002544SA (en)
TW (2) TWI689776B (en)
WO (1) WO2019058984A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7255512B2 (en) * 2019-03-29 2023-04-11 信越化学工業株式会社 Phase shift mask blank and phase shift mask
JP6987912B2 (en) * 2020-03-16 2022-01-05 アルバック成膜株式会社 Mask blanks, phase shift mask, manufacturing method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3513124B2 (en) * 1992-11-02 2004-03-31 株式会社東芝 Film formation method
JP3286103B2 (en) 1995-02-15 2002-05-27 株式会社東芝 Method and apparatus for manufacturing exposure mask
JP2002156742A (en) * 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask and method for manufacturing the same
DE10307518B4 (en) * 2002-02-22 2011-04-14 Hoya Corp. Halftone phase shift mask blank, halftone phase shift mask and method of making the same
US7011910B2 (en) * 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
JP4930964B2 (en) * 2005-05-20 2012-05-16 Hoya株式会社 Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask
CN102341475A (en) * 2008-12-22 2012-02-01 E.I.内穆尔杜邦公司 Electronic devices having long lifetime
JP2010217514A (en) 2009-03-17 2010-09-30 Toppan Printing Co Ltd Method for manufacturing photomask
KR102008857B1 (en) * 2010-04-09 2019-08-09 호야 가부시키가이샤 Phase shift mask blank, manufacturing method thereof, and phase shift mask
WO2013136882A1 (en) * 2012-03-14 2013-09-19 Hoya株式会社 Mask blank, and method for producing mask for transcription use
JP6157874B2 (en) * 2012-03-19 2017-07-05 Hoya株式会社 EUV Lithographic Substrate with Multilayer Reflective Film, EUV Lithographic Reflective Mask Blank, EUV Lithographic Reflective Mask, and Semiconductor Device Manufacturing Method
JP5286455B1 (en) * 2012-03-23 2013-09-11 Hoya株式会社 Mask blank, transfer mask, and manufacturing method thereof
JP6005530B2 (en) 2013-01-15 2016-10-12 Hoya株式会社 Mask blank, phase shift mask and manufacturing method thereof
JP5823655B1 (en) * 2014-03-18 2015-11-25 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
JP6477159B2 (en) * 2015-03-31 2019-03-06 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask blank
JP6418035B2 (en) * 2015-03-31 2018-11-07 信越化学工業株式会社 Phase shift mask blanks and phase shift masks
WO2017010178A1 (en) * 2015-07-16 2017-01-19 コニカミノルタ株式会社 Polarizing plate, manufacturing method for same, liquid crystal display device, and organic electroluminescent display device
JP6087401B2 (en) * 2015-08-14 2017-03-01 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
TWI684822B (en) * 2015-09-30 2020-02-11 日商Hoya股份有限公司 Blank mask, phase shift mask and method for manufacturing semiconductor element
KR102398583B1 (en) * 2015-11-06 2022-05-17 호야 가부시키가이샤 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6495472B2 (en) * 2016-03-29 2019-04-03 Hoya株式会社 Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6900872B2 (en) * 2016-12-26 2021-07-07 信越化学工業株式会社 Photomask blank and its manufacturing method
JP6271780B2 (en) * 2017-02-01 2018-01-31 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
TWI762878B (en) 2022-05-01
TWI689776B (en) 2020-04-01
CN111133379A (en) 2020-05-08
US20200285144A1 (en) 2020-09-10
TW202030543A (en) 2020-08-16
CN111133379B (en) 2024-03-22
JP6552700B2 (en) 2019-07-31
JP6964115B2 (en) 2021-11-10
KR20200054272A (en) 2020-05-19
TW201921087A (en) 2019-06-01
WO2019058984A1 (en) 2019-03-28
JP2019056910A (en) 2019-04-11
JP2019168729A (en) 2019-10-03

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