SG11202002544SA - Mask blank, transfer mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, transfer mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11202002544SA SG11202002544SA SG11202002544SA SG11202002544SA SG11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA SG 11202002544S A SG11202002544S A SG 11202002544SA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- manufacturing semiconductor
- transfer
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
- G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017181304 | 2017-09-21 | ||
PCT/JP2018/033015 WO2019058984A1 (en) | 2017-09-21 | 2018-09-06 | Mask blank, transfer mask, and method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202002544SA true SG11202002544SA (en) | 2020-04-29 |
Family
ID=65809722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202002544SA SG11202002544SA (en) | 2017-09-21 | 2018-09-06 | Mask blank, transfer mask, and method for manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US20200285144A1 (en) |
JP (2) | JP6552700B2 (en) |
KR (1) | KR20200054272A (en) |
CN (1) | CN111133379B (en) |
SG (1) | SG11202002544SA (en) |
TW (2) | TWI689776B (en) |
WO (1) | WO2019058984A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7255512B2 (en) * | 2019-03-29 | 2023-04-11 | 信越化学工業株式会社 | Phase shift mask blank and phase shift mask |
JP6987912B2 (en) * | 2020-03-16 | 2022-01-05 | アルバック成膜株式会社 | Mask blanks, phase shift mask, manufacturing method |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3513124B2 (en) * | 1992-11-02 | 2004-03-31 | 株式会社東芝 | Film formation method |
JP3286103B2 (en) | 1995-02-15 | 2002-05-27 | 株式会社東芝 | Method and apparatus for manufacturing exposure mask |
JP2002156742A (en) * | 2000-11-20 | 2002-05-31 | Shin Etsu Chem Co Ltd | Phase shift mask blank, phase shift mask and method for manufacturing the same |
DE10307518B4 (en) * | 2002-02-22 | 2011-04-14 | Hoya Corp. | Halftone phase shift mask blank, halftone phase shift mask and method of making the same |
US7011910B2 (en) * | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
JP4930964B2 (en) * | 2005-05-20 | 2012-05-16 | Hoya株式会社 | Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask |
CN102341475A (en) * | 2008-12-22 | 2012-02-01 | E.I.内穆尔杜邦公司 | Electronic devices having long lifetime |
JP2010217514A (en) | 2009-03-17 | 2010-09-30 | Toppan Printing Co Ltd | Method for manufacturing photomask |
KR102008857B1 (en) * | 2010-04-09 | 2019-08-09 | 호야 가부시키가이샤 | Phase shift mask blank, manufacturing method thereof, and phase shift mask |
WO2013136882A1 (en) * | 2012-03-14 | 2013-09-19 | Hoya株式会社 | Mask blank, and method for producing mask for transcription use |
JP6157874B2 (en) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | EUV Lithographic Substrate with Multilayer Reflective Film, EUV Lithographic Reflective Mask Blank, EUV Lithographic Reflective Mask, and Semiconductor Device Manufacturing Method |
JP5286455B1 (en) * | 2012-03-23 | 2013-09-11 | Hoya株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
JP6005530B2 (en) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | Mask blank, phase shift mask and manufacturing method thereof |
JP5823655B1 (en) * | 2014-03-18 | 2015-11-25 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
JP6477159B2 (en) * | 2015-03-31 | 2019-03-06 | 信越化学工業株式会社 | Halftone phase shift mask blank and method of manufacturing halftone phase shift mask blank |
JP6418035B2 (en) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | Phase shift mask blanks and phase shift masks |
WO2017010178A1 (en) * | 2015-07-16 | 2017-01-19 | コニカミノルタ株式会社 | Polarizing plate, manufacturing method for same, liquid crystal display device, and organic electroluminescent display device |
JP6087401B2 (en) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
TWI684822B (en) * | 2015-09-30 | 2020-02-11 | 日商Hoya股份有限公司 | Blank mask, phase shift mask and method for manufacturing semiconductor element |
KR102398583B1 (en) * | 2015-11-06 | 2022-05-17 | 호야 가부시키가이샤 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP6495472B2 (en) * | 2016-03-29 | 2019-04-03 | Hoya株式会社 | Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
JP6900872B2 (en) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
JP6271780B2 (en) * | 2017-02-01 | 2018-01-31 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
-
2018
- 2018-09-06 US US16/648,933 patent/US20200285144A1/en not_active Abandoned
- 2018-09-06 WO PCT/JP2018/033015 patent/WO2019058984A1/en active Application Filing
- 2018-09-06 SG SG11202002544SA patent/SG11202002544SA/en unknown
- 2018-09-06 KR KR1020207010796A patent/KR20200054272A/en not_active Application Discontinuation
- 2018-09-06 CN CN201880061746.XA patent/CN111133379B/en active Active
- 2018-09-19 TW TW107132910A patent/TWI689776B/en active
- 2018-09-19 TW TW109107216A patent/TWI762878B/en active
- 2018-09-20 JP JP2018176590A patent/JP6552700B2/en active Active
-
2019
- 2019-07-02 JP JP2019123669A patent/JP6964115B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI762878B (en) | 2022-05-01 |
TWI689776B (en) | 2020-04-01 |
CN111133379A (en) | 2020-05-08 |
US20200285144A1 (en) | 2020-09-10 |
TW202030543A (en) | 2020-08-16 |
CN111133379B (en) | 2024-03-22 |
JP6552700B2 (en) | 2019-07-31 |
JP6964115B2 (en) | 2021-11-10 |
KR20200054272A (en) | 2020-05-19 |
TW201921087A (en) | 2019-06-01 |
WO2019058984A1 (en) | 2019-03-28 |
JP2019056910A (en) | 2019-04-11 |
JP2019168729A (en) | 2019-10-03 |
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