SG11202007975QA - Mask blank, phase shift mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method for manufacturing semiconductor device

Info

Publication number
SG11202007975QA
SG11202007975QA SG11202007975QA SG11202007975QA SG11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202007975QA
Inventor
Hitoshi Maeda
Ryo Ohkubo
Yasutaka Horigome
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202007975QA publication Critical patent/SG11202007975QA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
SG11202007975QA 2018-02-22 2019-01-08 Mask blank, phase shift mask, and method for manufacturing semiconductor device SG11202007975QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018029428A JP6547019B1 (en) 2018-02-22 2018-02-22 Mask blank, phase shift mask and method of manufacturing semiconductor device
PCT/JP2019/000138 WO2019163310A1 (en) 2018-02-22 2019-01-08 Mask blank, phase shift mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11202007975QA true SG11202007975QA (en) 2020-09-29

Family

ID=67297609

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202007975QA SG11202007975QA (en) 2018-02-22 2019-01-08 Mask blank, phase shift mask, and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (2) US11009787B2 (en)
JP (1) JP6547019B1 (en)
KR (2) KR20240067993A (en)
CN (2) CN111758071B (en)
SG (1) SG11202007975QA (en)
TW (1) TWI815847B (en)
WO (1) WO2019163310A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021044917A1 (en) * 2019-09-05 2021-03-11 Hoya株式会社 Mask blank, phase shift mask and method for producing semiconductor device
JPWO2021059890A1 (en) * 2019-09-25 2021-04-01
JP7192731B2 (en) * 2019-09-27 2022-12-20 信越化学工業株式会社 Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask
JP6987912B2 (en) * 2020-03-16 2022-01-05 アルバック成膜株式会社 Mask blanks, phase shift mask, manufacturing method
KR20220130376A (en) 2021-03-18 2022-09-27 렉스온 주식회사 Hinge device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3229446B2 (en) 1993-07-13 2001-11-19 大日本印刷株式会社 Halftone phase shift photomask and blank for halftone phase shift photomask
KR100295385B1 (en) 1993-04-09 2001-09-17 기타지마 요시토시 Halftone Phase Shift Photomask, Blanks for Halftone Phase Shift Photomask and Manufacturing Method thereof
US5514499A (en) 1993-05-25 1996-05-07 Kabushiki Kaisha Toshiba Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
JP3115185B2 (en) 1993-05-25 2000-12-04 株式会社東芝 Exposure mask and pattern forming method
JPH10171096A (en) * 1996-12-14 1998-06-26 Hoya Corp Phase shift mask and phase shift mask blank
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
JP3722029B2 (en) 2000-09-12 2005-11-30 Hoya株式会社 Phase shift mask blank manufacturing method and phase shift mask manufacturing method
JP2002341515A (en) * 2001-05-18 2002-11-27 Shin Etsu Chem Co Ltd Phase shifting mask blank, and method for producing phase shifting mask
US7652401B2 (en) 2005-02-07 2010-01-26 Lg Innotek Co., Ltd. Flat vibration motor
JP4766507B2 (en) * 2005-03-30 2011-09-07 Hoya株式会社 Phase shift mask blank and method of manufacturing phase shift mask
US8535855B2 (en) * 2010-05-19 2013-09-17 Hoya Corporation Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask
KR102166222B1 (en) * 2013-01-15 2020-10-15 호야 가부시키가이샤 Mask blank, phase-shift mask, and method for manufacturing mask blank and phase-shift mask
JP6101646B2 (en) * 2013-02-26 2017-03-22 Hoya株式会社 Phase shift mask blank and manufacturing method thereof, phase shift mask and manufacturing method thereof, and display device manufacturing method
JP2015049282A (en) 2013-08-30 2015-03-16 Hoya株式会社 Photomask for manufacturing a display device, manufacturing method of photomask, pattern transfer method, and manufacturing method of display device
US10365556B2 (en) * 2015-03-27 2019-07-30 Hoya Corporation Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
KR102416957B1 (en) 2015-11-06 2022-07-05 호야 가부시키가이샤 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
CN111758071B (en) 2023-05-26
JP6547019B1 (en) 2019-07-17
TWI815847B (en) 2023-09-21
CN111758071A (en) 2020-10-09
US20210255538A1 (en) 2021-08-19
WO2019163310A1 (en) 2019-08-29
KR20240067993A (en) 2024-05-17
TW201937267A (en) 2019-09-16
KR20200123102A (en) 2020-10-28
US20210088895A1 (en) 2021-03-25
KR102665789B1 (en) 2024-05-14
JP2019144444A (en) 2019-08-29
US11009787B2 (en) 2021-05-18
US11415875B2 (en) 2022-08-16
CN116841118A (en) 2023-10-03
TW202405553A (en) 2024-02-01

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