SG11202007975QA - Mask blank, phase shift mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11202007975QA SG11202007975QA SG11202007975QA SG11202007975QA SG11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA SG 11202007975Q A SG11202007975Q A SG 11202007975QA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- phase shift
- manufacturing semiconductor
- mask blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000010363 phase shift Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018029428A JP6547019B1 (en) | 2018-02-22 | 2018-02-22 | Mask blank, phase shift mask and method of manufacturing semiconductor device |
PCT/JP2019/000138 WO2019163310A1 (en) | 2018-02-22 | 2019-01-08 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202007975QA true SG11202007975QA (en) | 2020-09-29 |
Family
ID=67297609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202007975QA SG11202007975QA (en) | 2018-02-22 | 2019-01-08 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (2) | US11009787B2 (en) |
JP (1) | JP6547019B1 (en) |
KR (2) | KR20240067993A (en) |
CN (2) | CN111758071B (en) |
SG (1) | SG11202007975QA (en) |
TW (1) | TWI815847B (en) |
WO (1) | WO2019163310A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021044917A1 (en) * | 2019-09-05 | 2021-03-11 | Hoya株式会社 | Mask blank, phase shift mask and method for producing semiconductor device |
JPWO2021059890A1 (en) * | 2019-09-25 | 2021-04-01 | ||
JP7192731B2 (en) * | 2019-09-27 | 2022-12-20 | 信越化学工業株式会社 | Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask |
JP6987912B2 (en) * | 2020-03-16 | 2022-01-05 | アルバック成膜株式会社 | Mask blanks, phase shift mask, manufacturing method |
KR20220130376A (en) | 2021-03-18 | 2022-09-27 | 렉스온 주식회사 | Hinge device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3229446B2 (en) | 1993-07-13 | 2001-11-19 | 大日本印刷株式会社 | Halftone phase shift photomask and blank for halftone phase shift photomask |
KR100295385B1 (en) | 1993-04-09 | 2001-09-17 | 기타지마 요시토시 | Halftone Phase Shift Photomask, Blanks for Halftone Phase Shift Photomask and Manufacturing Method thereof |
US5514499A (en) | 1993-05-25 | 1996-05-07 | Kabushiki Kaisha Toshiba | Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same |
JP3115185B2 (en) | 1993-05-25 | 2000-12-04 | 株式会社東芝 | Exposure mask and pattern forming method |
JPH10171096A (en) * | 1996-12-14 | 1998-06-26 | Hoya Corp | Phase shift mask and phase shift mask blank |
US6274280B1 (en) | 1999-01-14 | 2001-08-14 | E.I. Du Pont De Nemours And Company | Multilayer attenuating phase-shift masks |
JP3722029B2 (en) | 2000-09-12 | 2005-11-30 | Hoya株式会社 | Phase shift mask blank manufacturing method and phase shift mask manufacturing method |
JP2002341515A (en) * | 2001-05-18 | 2002-11-27 | Shin Etsu Chem Co Ltd | Phase shifting mask blank, and method for producing phase shifting mask |
US7652401B2 (en) | 2005-02-07 | 2010-01-26 | Lg Innotek Co., Ltd. | Flat vibration motor |
JP4766507B2 (en) * | 2005-03-30 | 2011-09-07 | Hoya株式会社 | Phase shift mask blank and method of manufacturing phase shift mask |
US8535855B2 (en) * | 2010-05-19 | 2013-09-17 | Hoya Corporation | Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask |
KR102166222B1 (en) * | 2013-01-15 | 2020-10-15 | 호야 가부시키가이샤 | Mask blank, phase-shift mask, and method for manufacturing mask blank and phase-shift mask |
JP6101646B2 (en) * | 2013-02-26 | 2017-03-22 | Hoya株式会社 | Phase shift mask blank and manufacturing method thereof, phase shift mask and manufacturing method thereof, and display device manufacturing method |
JP2015049282A (en) | 2013-08-30 | 2015-03-16 | Hoya株式会社 | Photomask for manufacturing a display device, manufacturing method of photomask, pattern transfer method, and manufacturing method of display device |
US10365556B2 (en) * | 2015-03-27 | 2019-07-30 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
KR102416957B1 (en) | 2015-11-06 | 2022-07-05 | 호야 가부시키가이샤 | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
-
2018
- 2018-02-22 JP JP2018029428A patent/JP6547019B1/en active Active
-
2019
- 2019-01-08 SG SG11202007975QA patent/SG11202007975QA/en unknown
- 2019-01-08 US US16/970,601 patent/US11009787B2/en active Active
- 2019-01-08 KR KR1020247015381A patent/KR20240067993A/en active Application Filing
- 2019-01-08 CN CN201980014769.XA patent/CN111758071B/en active Active
- 2019-01-08 CN CN202310713382.1A patent/CN116841118A/en active Pending
- 2019-01-08 KR KR1020207022109A patent/KR102665789B1/en active IP Right Grant
- 2019-01-08 WO PCT/JP2019/000138 patent/WO2019163310A1/en active Application Filing
- 2019-01-22 TW TW108102334A patent/TWI815847B/en active
-
2021
- 2021-04-15 US US17/231,282 patent/US11415875B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN111758071B (en) | 2023-05-26 |
JP6547019B1 (en) | 2019-07-17 |
TWI815847B (en) | 2023-09-21 |
CN111758071A (en) | 2020-10-09 |
US20210255538A1 (en) | 2021-08-19 |
WO2019163310A1 (en) | 2019-08-29 |
KR20240067993A (en) | 2024-05-17 |
TW201937267A (en) | 2019-09-16 |
KR20200123102A (en) | 2020-10-28 |
US20210088895A1 (en) | 2021-03-25 |
KR102665789B1 (en) | 2024-05-14 |
JP2019144444A (en) | 2019-08-29 |
US11009787B2 (en) | 2021-05-18 |
US11415875B2 (en) | 2022-08-16 |
CN116841118A (en) | 2023-10-03 |
TW202405553A (en) | 2024-02-01 |
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