SG11201800548TA - Mask blank, phase shift mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201800548TA SG11201800548TA SG11201800548TA SG11201800548TA SG11201800548TA SG 11201800548T A SG11201800548T A SG 11201800548TA SG 11201800548T A SG11201800548T A SG 11201800548TA SG 11201800548T A SG11201800548T A SG 11201800548TA SG 11201800548T A SG11201800548T A SG 11201800548TA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- phase shift
- manufacturing semiconductor
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015160097A JP6087401B2 (en) | 2015-08-14 | 2015-08-14 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
| PCT/JP2016/072631 WO2017029981A1 (en) | 2015-08-14 | 2016-08-02 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201800548TA true SG11201800548TA (en) | 2018-02-27 |
Family
ID=58047758
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201911778SA SG10201911778SA (en) | 2015-08-14 | 2016-08-02 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
| SG10201806936XA SG10201806936XA (en) | 2015-08-14 | 2016-08-02 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
| SG11201800548TA SG11201800548TA (en) | 2015-08-14 | 2016-08-02 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201911778SA SG10201911778SA (en) | 2015-08-14 | 2016-08-02 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
| SG10201806936XA SG10201806936XA (en) | 2015-08-14 | 2016-08-02 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10114281B2 (en) |
| JP (1) | JP6087401B2 (en) |
| KR (3) | KR20220073864A (en) |
| SG (3) | SG10201911778SA (en) |
| TW (3) | TWI600961B (en) |
| WO (1) | WO2017029981A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6058757B1 (en) * | 2015-07-15 | 2017-01-11 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| JP6087401B2 (en) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
| US11327396B2 (en) * | 2016-03-29 | 2022-05-10 | Hoya Corporation | Mask blank |
| JP6400763B2 (en) * | 2017-03-16 | 2018-10-03 | Hoya株式会社 | Mask blank, transfer mask, and semiconductor device manufacturing method |
| KR102568807B1 (en) * | 2017-03-28 | 2023-08-21 | 호야 가부시키가이샤 | Phase shift mask blank and method for manufacturing phase shift mask using the same, and pattern transfer method |
| JP6791031B2 (en) * | 2017-06-13 | 2020-11-25 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
| SG10202103395QA (en) * | 2017-06-14 | 2021-05-28 | Hoya Corp | Mask blank, method for producing transfer mask and method for producing semiconductor device |
| US20200285144A1 (en) * | 2017-09-21 | 2020-09-10 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
| SG11202002928WA (en) * | 2017-11-24 | 2020-04-29 | Hoya Corp | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
| KR20200125586A (en) * | 2017-12-26 | 2020-11-04 | 호야 가부시키가이샤 | Mask blank, phase shift mask, and manufacturing method of semiconductor device |
| JP7109996B2 (en) * | 2018-05-30 | 2022-08-01 | Hoya株式会社 | MASK BLANK, PHASE SHIFT MASK, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| JP7255512B2 (en) * | 2019-03-29 | 2023-04-11 | 信越化学工業株式会社 | Phase shift mask blank and phase shift mask |
| CN113809047B (en) * | 2020-06-12 | 2024-02-06 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3339716B2 (en) * | 1992-07-17 | 2002-10-28 | 株式会社東芝 | Manufacturing method of exposure mask |
| US5547787A (en) | 1992-04-22 | 1996-08-20 | Kabushiki Kaisha Toshiba | Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask |
| JP2001201842A (en) * | 1999-11-09 | 2001-07-27 | Ulvac Seimaku Kk | Phase shift photomask blank, phase shift photomask, and manufacturing method of semiconductor device |
| JP3818171B2 (en) * | 2002-02-22 | 2006-09-06 | Ｈｏｙａ株式会社 | Phase shift mask blank and manufacturing method thereof |
| DE10307518B4 (en) | 2002-02-22 | 2011-04-14 | Hoya Corp. | Halftone phase shift mask blank, halftone phase shift mask and method of making the same |
| US7556892B2 (en) | 2004-03-31 | 2009-07-07 | Shin-Etsu Chemical Co., Ltd. | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
| JP4348536B2 (en) * | 2004-03-31 | 2009-10-21 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask and pattern transfer method |
| US7651823B2 (en) * | 2004-06-16 | 2010-01-26 | Hoya Corporation | Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film |
| JP2006078825A (en) * | 2004-09-10 | 2006-03-23 | Shin Etsu Chem Co Ltd | Photomask blank, photomask and method for manufacturing same |
| JP2010217514A (en) | 2009-03-17 | 2010-09-30 | Toppan Printing Co Ltd | Method for manufacturing photomask |
| US9625806B2 (en) | 2013-01-15 | 2017-04-18 | Hoya Corporation | Mask blank, phase-shift mask, and method for manufacturing the same |
| JP6005530B2 (en) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | Mask blank, phase shift mask and manufacturing method thereof |
| JP6185721B2 (en) * | 2013-01-29 | 2017-08-23 | Hoya株式会社 | Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| KR102261621B1 (en) * | 2014-12-26 | 2021-06-04 | 호야 가부시키가이샤 | Mask blank, phase-shift mask, method for manufacturing phase-shift mask and method for manufacturing semiconductor device |
| JP6087401B2 (en) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
-
2015
- 2015-08-14 JP JP2015160097A patent/JP6087401B2/en active Active
-
2016
- 2016-08-02 KR KR1020227017346A patent/KR20220073864A/en not_active Application Discontinuation
- 2016-08-02 US US15/501,659 patent/US10114281B2/en active Active
- 2016-08-02 KR KR1020177035245A patent/KR102402659B1/en active IP Right Grant
- 2016-08-02 SG SG10201911778SA patent/SG10201911778SA/en unknown
- 2016-08-02 SG SG10201806936XA patent/SG10201806936XA/en unknown
- 2016-08-02 WO PCT/JP2016/072631 patent/WO2017029981A1/en active Application Filing
- 2016-08-02 KR KR1020177004708A patent/KR101809424B1/en active IP Right Grant
- 2016-08-02 SG SG11201800548TA patent/SG11201800548TA/en unknown
- 2016-08-08 TW TW105125100A patent/TWI600961B/en active
- 2016-08-08 TW TW107118088A patent/TWI689777B/en active
- 2016-08-08 TW TW106128536A patent/TWI629556B/en active
-
2018
- 2018-09-20 US US16/136,794 patent/US10606164B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201743128A (en) | 2017-12-16 |
| JP2017037278A (en) | 2017-02-16 |
| US10606164B2 (en) | 2020-03-31 |
| KR20180030471A (en) | 2018-03-23 |
| SG10201806936XA (en) | 2018-09-27 |
| TW201719271A (en) | 2017-06-01 |
| KR20220073864A (en) | 2022-06-03 |
| KR102402659B1 (en) | 2022-05-26 |
| WO2017029981A1 (en) | 2017-02-23 |
| JP6087401B2 (en) | 2017-03-01 |
| TWI629556B (en) | 2018-07-11 |
| SG10201911778SA (en) | 2020-01-30 |
| TW201833658A (en) | 2018-09-16 |
| US20190018312A1 (en) | 2019-01-17 |
| TWI689777B (en) | 2020-04-01 |
| KR101809424B1 (en) | 2017-12-14 |
| KR20170044110A (en) | 2017-04-24 |
| US10114281B2 (en) | 2018-10-30 |
| TWI600961B (en) | 2017-10-01 |
| US20180143528A1 (en) | 2018-05-24 |
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