SG10201602447WA - Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method - Google Patents
Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing MethodInfo
- Publication number
- SG10201602447WA SG10201602447WA SG10201602447WA SG10201602447WA SG10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA SG 10201602447W A SG10201602447W A SG 10201602447WA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- blank
- preparing method
- blank preparing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01008—Oxygen [O]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015072766A JP6418035B2 (en) | 2015-03-31 | 2015-03-31 | Phase shift mask blanks and phase shift masks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201602447WA true SG10201602447WA (en) | 2016-10-28 |
Family
ID=55586194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201602447WA SG10201602447WA (en) | 2015-03-31 | 2016-03-29 | Phase Shift Mask Blank, Phase Shift Mask, And Blank Preparing Method |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10078260B2 (en) |
| EP (1) | EP3079011B1 (en) |
| JP (1) | JP6418035B2 (en) |
| KR (1) | KR102223666B1 (en) |
| CN (1) | CN106019808B (en) |
| SG (1) | SG10201602447WA (en) |
| TW (1) | TWI684060B (en) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6418035B2 (en) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | Phase shift mask blanks and phase shift masks |
| JP6743679B2 (en) | 2016-03-02 | 2020-08-19 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
| US10678125B2 (en) * | 2016-03-02 | 2020-06-09 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
| JP6900872B2 (en) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
| CN110383167B (en) | 2017-02-27 | 2022-08-23 | Hoya株式会社 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP6432636B2 (en) * | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | Photomask blank, photomask and photomask manufacturing method |
| JP6808566B2 (en) * | 2017-04-08 | 2021-01-06 | Hoya株式会社 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP6716629B2 (en) * | 2017-05-18 | 2020-07-01 | エスアンドエス テック カンパニー リミテッド | Phase inversion blank mask and manufacturing method thereof |
| JP6753375B2 (en) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | Photomask blank, photomask blank manufacturing method and photomask manufacturing method |
| US20200285144A1 (en) * | 2017-09-21 | 2020-09-10 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
| JP7037919B2 (en) * | 2017-11-14 | 2022-03-17 | アルバック成膜株式会社 | Mask blank, halftone mask and its manufacturing method |
| CN111902772A (en) * | 2018-03-26 | 2020-11-06 | Hoya株式会社 | Mask blank, phase shift mask and method for manufacturing semiconductor device |
| JP6938428B2 (en) * | 2018-05-30 | 2021-09-22 | Hoya株式会社 | Manufacturing method of mask blank, phase shift mask and semiconductor device |
| JP2020013100A (en) | 2018-07-13 | 2020-01-23 | エスアンドエス テック カンパニー リミテッド | Blank mask, photomask and method for manufacturing the same |
| KR20200007623A (en) * | 2018-07-13 | 2020-01-22 | 주식회사 에스앤에스텍 | Blankmask and Photomask and method for fabricating of the same |
| TWI816568B (en) * | 2018-11-30 | 2023-09-21 | 日商Ｈｏｙａ股份有限公司 | Photomask blank, method of manufacturing photomask, and method of manufacturing display device |
| JP7192731B2 (en) * | 2019-09-27 | 2022-12-20 | 信越化学工業株式会社 | Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask |
| TWI707195B (en) * | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | Method of manufacturing phase-shifting photomask |
| KR20230007511A (en) | 2020-06-30 | 2023-01-12 | 알박 세이마쿠 가부시키가이샤 | Method for manufacturing mask blanks, method for manufacturing mask blanks, photomask, and photomask |
| CN112666789B (en) * | 2020-12-02 | 2024-05-24 | 湖南普照信息材料有限公司 | Attenuation type high-uniformity phase shift photomask blank and preparation method thereof |
| CN112981316A (en) * | 2021-02-05 | 2021-06-18 | 上海传芯半导体有限公司 | Method for manufacturing phase shift reverse film mask substrate |
| CN113488378A (en) * | 2021-07-21 | 2021-10-08 | 湖南普照信息材料有限公司 | Photomask blank and preparation method thereof |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3064769B2 (en) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK |
| US6045954A (en) * | 1998-06-12 | 2000-04-04 | Industrial Technology Research Institute | Formation of silicon nitride film for a phase shift mask at 193 nm |
| US6150286A (en) * | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
| JP4686006B2 (en) * | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | Halftone phase shift photomask, blank for halftone phase shift photomask, and method for manufacturing halftone phase shift photomask |
| JP3722029B2 (en) * | 2000-09-12 | 2005-11-30 | Ｈｏｙａ株式会社 | Phase shift mask blank manufacturing method and phase shift mask manufacturing method |
| JP2002169265A (en) * | 2000-12-01 | 2002-06-14 | Hoya Corp | Photomask blank and method of manufacturing photomask blank |
| JP2002258458A (en) * | 2000-12-26 | 2002-09-11 | Hoya Corp | Halftone phase shift mask and mask blank |
| CN100440038C (en) * | 2001-11-27 | 2008-12-03 | Hoya株式会社 | Half-tone type phase shift mask blank, half-tone type phase shift mask and process for producing same |
| JP3988041B2 (en) | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | Halftone phase shift mask blank and manufacturing method thereof |
| JP4258631B2 (en) * | 2002-12-03 | 2009-04-30 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
| KR100617389B1 (en) * | 2005-05-16 | 2006-08-31 | 주식회사 피케이엘 | Phase shift mask for preventing haze |
| EP1746460B1 (en) | 2005-07-21 | 2011-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and fabrication method thereof |
| JP4933753B2 (en) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
| JP4551344B2 (en) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | Photomask blank and photomask |
| JP4764214B2 (en) * | 2006-03-10 | 2011-08-31 | 凸版印刷株式会社 | Halftone phase shift mask and manufacturing method thereof |
| JP4509050B2 (en) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
| US20070243491A1 (en) * | 2006-04-18 | 2007-10-18 | Wu Wei E | Method of making a semiconductor with a high transmission CVD silicon nitride phase shift mask |
| JP4714180B2 (en) | 2007-05-01 | 2011-06-29 | 株式会社東芝 | Photomask management method, photomask cleaning possible number generation method, and photomask management system |
| US8187187B2 (en) * | 2008-07-16 | 2012-05-29 | Siemens Medical Solutions Usa, Inc. | Shear wave imaging |
| JP5497288B2 (en) * | 2008-12-29 | 2014-05-21 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method and photomask manufacturing method |
| JP4853685B2 (en) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | Inspection method and pass / fail judgment method for photomask blank or manufacturing intermediate thereof |
| JP4853686B2 (en) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | Method for inspecting photomask blank or production intermediate thereof, method for determining irradiation energy amount of high energy ray, and method for producing photomask blank |
| US9348217B2 (en) * | 2012-03-30 | 2016-05-24 | Hoya Corporation | Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method |
| JP5739375B2 (en) * | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | Halftone phase shift mask blank and method of manufacturing halftone phase shift mask |
| KR102123702B1 (en) * | 2012-05-16 | 2020-06-16 | 호야 가부시키가이샤 | Mask blank, transfer mask, and method for manufacturing blank and mask |
| JP6371221B2 (en) * | 2012-11-08 | 2018-08-08 | Hoya株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
| JP6036590B2 (en) * | 2013-07-25 | 2016-11-30 | 富士ゼロックス株式会社 | Belt offset control structure, transfer device, and image forming apparatus |
| US9874808B2 (en) | 2013-08-21 | 2018-01-23 | Dai Nippon Printing Co., Ltd. | Mask blank, mask blank with negative resist film, phase shift mask, and method for producing pattern formed body using same |
| JP2015049282A (en) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | Photomask for manufacturing a display device, manufacturing method of photomask, pattern transfer method, and manufacturing method of display device |
| JP6264238B2 (en) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method |
| JP2016035559A (en) * | 2014-08-04 | 2016-03-17 | 信越化学工業株式会社 | Halftone phase shift photomask blank and method for manufacturing the same |
| JP6418035B2 (en) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | Phase shift mask blanks and phase shift masks |
-
2015
- 2015-03-31 JP JP2015072766A patent/JP6418035B2/en active Active
-
2016
- 2016-03-17 EP EP16160894.8A patent/EP3079011B1/en active Active
- 2016-03-22 US US15/077,296 patent/US10078260B2/en active Active
- 2016-03-28 KR KR1020160036735A patent/KR102223666B1/en active IP Right Grant
- 2016-03-29 SG SG10201602447WA patent/SG10201602447WA/en unknown
- 2016-03-30 TW TW105110130A patent/TWI684060B/en active
- 2016-03-31 CN CN201610195474.5A patent/CN106019808B/en active Active
-
2018
- 2018-08-13 US US16/101,948 patent/US10545401B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10078260B2 (en) | 2018-09-18 |
| EP3079011A3 (en) | 2016-12-21 |
| EP3079011A2 (en) | 2016-10-12 |
| TW201702733A (en) | 2017-01-16 |
| US10545401B2 (en) | 2020-01-28 |
| TWI684060B (en) | 2020-02-01 |
| CN106019808A (en) | 2016-10-12 |
| CN106019808B (en) | 2021-04-02 |
| US20160291453A1 (en) | 2016-10-06 |
| KR102223666B1 (en) | 2021-03-05 |
| US20180356720A1 (en) | 2018-12-13 |
| KR20160117247A (en) | 2016-10-10 |
| JP6418035B2 (en) | 2018-11-07 |
| JP2016191872A (en) | 2016-11-10 |
| EP3079011B1 (en) | 2017-11-01 |
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