KR101881818B1 - Phase Shift Blankmask, and Method for manufacturing the same - Google Patents
Phase Shift Blankmask, and Method for manufacturing the same Download PDFInfo
- Publication number
- KR101881818B1 KR101881818B1 KR1020160050618A KR20160050618A KR101881818B1 KR 101881818 B1 KR101881818 B1 KR 101881818B1 KR 1020160050618 A KR1020160050618 A KR 1020160050618A KR 20160050618 A KR20160050618 A KR 20160050618A KR 101881818 B1 KR101881818 B1 KR 101881818B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- same
- phase shift
- shift blankmask
- blankmask
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000010363 phase shift Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- G03F1/0046—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H01L21/205—
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20150115205 | 2015-08-17 | ||
KR1020150115205 | 2015-08-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170021193A KR20170021193A (en) | 2017-02-27 |
KR101881818B1 true KR101881818B1 (en) | 2018-07-25 |
Family
ID=58315714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160050618A KR101881818B1 (en) | 2015-08-17 | 2016-04-26 | Phase Shift Blankmask, and Method for manufacturing the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101881818B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6716629B2 (en) * | 2017-05-18 | 2020-07-01 | エスアンドエス テック カンパニー リミテッド | Phase inversion blank mask and manufacturing method thereof |
KR102624206B1 (en) | 2021-02-25 | 2024-01-15 | 인하대학교 산학협력단 | Method and Apparatus for manufacturing Light-Shielding Layer for ArF Phase Shift Blank Mask |
KR102663167B1 (en) | 2021-02-25 | 2024-05-03 | 인하대학교 산학협력단 | Light-Sielding Layer for ArF phase Shift Blank Mask Containing Metal and Semiconductor Composite |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070092683A (en) * | 2006-03-10 | 2007-09-13 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank and photomask |
JP2011215404A (en) * | 2010-03-31 | 2011-10-27 | Toppan Printing Co Ltd | Photo mask blank and method for manufacturing the same |
KR20140095955A (en) * | 2013-10-04 | 2014-08-04 | 주식회사 에스앤에스텍 | Phase shift blankmask and method for fabricating the same |
KR20140137072A (en) * | 2013-05-22 | 2014-12-02 | 주식회사 에스앤에스텍 | Blankmask and method for fabricating of the same |
-
2016
- 2016-04-26 KR KR1020160050618A patent/KR101881818B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070092683A (en) * | 2006-03-10 | 2007-09-13 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank and photomask |
JP2011215404A (en) * | 2010-03-31 | 2011-10-27 | Toppan Printing Co Ltd | Photo mask blank and method for manufacturing the same |
KR20140137072A (en) * | 2013-05-22 | 2014-12-02 | 주식회사 에스앤에스텍 | Blankmask and method for fabricating of the same |
KR20140095955A (en) * | 2013-10-04 | 2014-08-04 | 주식회사 에스앤에스텍 | Phase shift blankmask and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
KR20170021193A (en) | 2017-02-27 |
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E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
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E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |