KR101881818B1 - Phase Shift Blankmask, and Method for manufacturing the same - Google Patents

Phase Shift Blankmask, and Method for manufacturing the same Download PDF

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Publication number
KR101881818B1
KR101881818B1 KR1020160050618A KR20160050618A KR101881818B1 KR 101881818 B1 KR101881818 B1 KR 101881818B1 KR 1020160050618 A KR1020160050618 A KR 1020160050618A KR 20160050618 A KR20160050618 A KR 20160050618A KR 101881818 B1 KR101881818 B1 KR 101881818B1
Authority
KR
South Korea
Prior art keywords
manufacturing
same
phase shift
shift blankmask
blankmask
Prior art date
Application number
KR1020160050618A
Other languages
Korean (ko)
Other versions
KR20170021193A (en
Inventor
남기수
신철
이종화
양철규
최민기
김창준
김지현
Original Assignee
(주)에스앤에스텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)에스앤에스텍 filed Critical (주)에스앤에스텍
Publication of KR20170021193A publication Critical patent/KR20170021193A/en
Application granted granted Critical
Publication of KR101881818B1 publication Critical patent/KR101881818B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • G03F1/0046—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H01L21/205—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020160050618A 2015-08-17 2016-04-26 Phase Shift Blankmask, and Method for manufacturing the same KR101881818B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20150115205 2015-08-17
KR1020150115205 2015-08-17

Publications (2)

Publication Number Publication Date
KR20170021193A KR20170021193A (en) 2017-02-27
KR101881818B1 true KR101881818B1 (en) 2018-07-25

Family

ID=58315714

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160050618A KR101881818B1 (en) 2015-08-17 2016-04-26 Phase Shift Blankmask, and Method for manufacturing the same

Country Status (1)

Country Link
KR (1) KR101881818B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6716629B2 (en) * 2017-05-18 2020-07-01 エスアンドエス テック カンパニー リミテッド Phase inversion blank mask and manufacturing method thereof
KR102624206B1 (en) 2021-02-25 2024-01-15 인하대학교 산학협력단 Method and Apparatus for manufacturing Light-Shielding Layer for ArF Phase Shift Blank Mask
KR102663167B1 (en) 2021-02-25 2024-05-03 인하대학교 산학협력단 Light-Sielding Layer for ArF phase Shift Blank Mask Containing Metal and Semiconductor Composite

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070092683A (en) * 2006-03-10 2007-09-13 신에쓰 가가꾸 고교 가부시끼가이샤 Photomask blank and photomask
JP2011215404A (en) * 2010-03-31 2011-10-27 Toppan Printing Co Ltd Photo mask blank and method for manufacturing the same
KR20140095955A (en) * 2013-10-04 2014-08-04 주식회사 에스앤에스텍 Phase shift blankmask and method for fabricating the same
KR20140137072A (en) * 2013-05-22 2014-12-02 주식회사 에스앤에스텍 Blankmask and method for fabricating of the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070092683A (en) * 2006-03-10 2007-09-13 신에쓰 가가꾸 고교 가부시끼가이샤 Photomask blank and photomask
JP2011215404A (en) * 2010-03-31 2011-10-27 Toppan Printing Co Ltd Photo mask blank and method for manufacturing the same
KR20140137072A (en) * 2013-05-22 2014-12-02 주식회사 에스앤에스텍 Blankmask and method for fabricating of the same
KR20140095955A (en) * 2013-10-04 2014-08-04 주식회사 에스앤에스텍 Phase shift blankmask and method for fabricating the same

Also Published As

Publication number Publication date
KR20170021193A (en) 2017-02-27

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GRNT Written decision to grant