KR20140137072A - Blankmask and method for fabricating of the same - Google Patents

Blankmask and method for fabricating of the same Download PDF

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Publication number
KR20140137072A
KR20140137072A KR1020130057465A KR20130057465A KR20140137072A KR 20140137072 A KR20140137072 A KR 20140137072A KR 1020130057465 A KR1020130057465 A KR 1020130057465A KR 20130057465 A KR20130057465 A KR 20130057465A KR 20140137072 A KR20140137072 A KR 20140137072A
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South Korea
Prior art keywords
film
metal film
gas
metal
less
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KR1020130057465A
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Korean (ko)
Inventor
남기수
강긍원
김동건
장종원
신승협
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주식회사 에스앤에스텍
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Priority to KR1020130057465A priority Critical patent/KR20140137072A/en
Publication of KR20140137072A publication Critical patent/KR20140137072A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention can form an optimized blank mask. When a metal layer of a blank mask is formed, variables such as layer forming power, the change level of a layer forming gas and process pressure are changed, thereby controlling the stress of a metal layer consisting of a single layer or a multiple layer with 250 MPa or less and having a planarization change of about 0.1 um after and before a metal layer is formed. In a blank mask according to the present invention, a metal layer is formed on a transparent layer. The metal layer includes at least one among a light shielding layer, an anti-reflection layer, a semi-transparent layer, a phase shift layer, a hard mask layer, an etch barrier layer, and a semi-transparent layer. Each metal layer formed has a planarization change of about 0.1 um after and before a layer is formed.

Description

Blank mask and method for fabricating the same

The present invention relates to a blank mask and a method of manufacturing the same, and more particularly, to a blank mask capable of improving alignment of a semiconductor and a photomask for flat panel display (FPD), and a method of manufacturing the same.

Today, in order to meet the demand for miniaturization of circuit patterns accompanied with the high integration of large-scale integrated circuits, advanced semiconductor fine processing technology is becoming a very important factor. In the case of an integrated circuit, the circuit wiring is made finer for low power and high-speed operation, and a contact hole pattern for interlayer connection and a circuit arrangement for integration are increasingly required. In addition, there is a growing demand for high integration in FPD (Flat Pannel Display) including TFT-LCD, OLED, and PDP.

With such high integration, for example, it is difficult to use a conventional photolithography process to form a wiring having a line width of 32 nm or less. Development of EUV exposure technology using extreme ultraviolet (EUV) having a wavelength of 13.5 nm has been progressed to form the line width as described above, but it has not yet been put to practical use. In recent years, double patterning technique has been attracting attention for forming a fine punched pattern.

On the other hand, in order to meet the demands for formation of fine patterns due to high integration, there is a need for miniaturization of a photomask for transferring and recording a circuit pattern by a photolithography process, Reliability is also required.

In general, a photomask is formed by forming at least one metal film such as a light-shielding film, an antireflection film, a phase reversal film, or a hard mask film on a transparent substrate, forming a photoresist film thereon to form a blank mask, And a pattern is formed through an etching and strip process. In order to form a fine circuit pattern by the same method as the double patterning, the alignment process of the photomask is important. To achieve this, the flatness of the photomask and the blank mask for fabricating the photomask is very important. That is, the metal films are formed of a chromium (Cr) -based compound or a molybdenum silicide (MoSi) -based compound, and have inherent stresses depending on the material and film formation conditions at the time of film formation, thereby causing warping of the substrate.

The bending of the substrate due to the metal film has a phenomenon that the stress is released by the patterning process for the metal film during the formation of the photomask using the blank mask and the pattern density of the photomask is reduced. Which causes an error in the alignment degree, thereby causing deterioration of the quality of the photomask.

The present invention is characterized in that each metal film or all of the metal films to be formed have a range of 250 MPa or less before and after the film formation by using the film forming power, the variation amount of the film forming gas, and the total volume of the film forming gas, And a blank mask optimized to have a flatness variation of 0.1 mu m or less.

Also, the present invention provides a high-quality photomask which does not cause an error in the degree of alignment according to the pattern density of the photomask in the process of forming a pattern using a blank mask in which the stress of the metal film is optimized.

A blank mask according to an embodiment of the present invention is a blank mask in which a metal film is formed on a transparent substrate and the metal film is formed of at least one of a light-shielding film, an antireflection film, a semi-permeable film, a phase reversal film, a hard mask film, Or more, and the metal film thus formed has a stress change of 250 MPa or less.

The metal film has a flatness variation of 0.1 占 퐉 or less with respect to the transparent substrate before and after the film formation.

When the metal film is formed of a multilayer film, the entire metal film has a stress change of 250 MPa or less.

The entire metal film has a flatness variation of 0.1 占 퐉 or less with respect to the transparent substrate before and after the film formation.

Each of the metal films may be formed of at least one selected from the group consisting of Cr, Ti, V, Co, Ni, Zr, Nb, Pd, (Al), manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), molybdenum (Mo), hafnium (Ta), and tungsten (W).

Each of the metal films further includes at least one of silicon (Si), oxygen (O), nitrogen (N), carbon (C), hydrogen (H), and fluorine (F).

The metal film has a thickness of 10A to 1,100A.

When the metal film includes at least one of a light-shielding film and an antireflection film, the metal film has an optical density of 3.0 or more.

When the metal film is a phase reversal film, the phase reversal film has a phase reversal amount of 180 ° ± 10 °.

Further, the method of manufacturing a blank mask according to the present invention is a method of manufacturing a blank mask, wherein at least one metal film of a light-shielding film, an antireflection film, a semitransmissive film, a phase reversal film, a hard mask film, And the metal film is formed so as to have a stress change of 250 MPa or less which changes at least one of the film forming power, the film forming gas injection amount, and the film forming pressure.

The metal film is formed at the film forming power of 1 W / cm 2 to 5 W / cm 2 .

The metal film is formed by implanting a deposition gas including an inert gas and a reactive gas, and the inert gas is injected at a rate of 10 vol% to 45 vol% relative to the total amount of the implanted gas.

The metal film is formed by implanting a deposition gas including an inert gas and a reactive gas. The reactive gas includes at least one of nitrogen (N 2 ), methane (CH 4 ), and nitrogen monoxide (NO).

The nitrogen (N 2 ) gas is injected at a rate of 0.5 to 5 relative to the inert gas.

The methane (CH 4 ) gas is injected at a rate of 0.05 to 0.5 based on the inert gas.

The nitrogen monoxide (NO) gas is injected at a rate of 0.5 to 3 relative to the inert gas.

The metal film is formed at the film forming pressure of 0.01 Pa to 0.1 Pa.

In the present invention, when the metal film constituting the blank mask is formed, the stress of the metal film composed of the single layer film or the multilayer film is adjusted to 250 MPa or less by changing the above conditions by using the film forming power, the thickness of the metal film, the amount of the film forming gas, It is possible to form a blank mask optimized so that each metal film has a flat change of 0.1 mu m or less before and after film formation.

In addition, the present invention can form a high-quality photomask that does not cause an error in the alignment degree according to the pattern density of the photomask during the pattern formation process by using the blank mask having the excellent flatness variation by controlling the stress of each thin film have.

1 is a sectional view showing a blank mask according to a first embodiment of the present invention;
2 is a cross-sectional view showing a blank mask according to a second embodiment of the present invention;
3 is a sectional view showing a blank mask according to the first embodiment of the present invention.

The present invention discloses a blank mask in which a blank mask is constituted of at least one metal film and each metal film or an entire metal film is formed so as to have a flatness variation of 0.1 탆 or less before and after film formation, and a manufacturing method thereof.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it should be understood that the embodiments have been used merely to aid in the description and illustration of the present invention and not to limit the scope of the present invention. It will thus be appreciated that various modifications and similar embodiments are possible in light of the embodiments. Accordingly, the true scope of protection of the present invention should be determined by the technical matters of the claims.

1 to 3 are sectional views showing blank masks according to first to third embodiments of the present invention.

1 to 3, a blank mask 100 according to an embodiment of the present invention includes a light shielding film 108 including a light shielding film 104 and an antireflection film 106 on a transparent substrate 102, A film 112, a hard mask film 114, and a photoresist 110, as shown in FIG.

The transparent substrate 102 has a size of 6 inches by 6 inches by 0.25 inches (width by length by thickness) and has a transmittance of 90% or more at an exposure wavelength of 200 nm or less. In the immersion lithography, the birefringence rate of the transparent substrate functions as a main factor of the exposure dose and the CD deviation. To reduce the birefringence rate, the birefringence of the transparent substrate 10 is less than 200 nm It is preferably 2 nm / 6.3 mm or less with respect to the wavelength, and more preferably 1.5 nm / 6.3 mm or less. Further, the transparent substrate 10 has a total indicated reading (TIR) of 0.5 탆 or less and has a concave shape.

1, the light shielding film 108 is formed of a multilayer film of a light-shielding film 104 having a function of blocking exposure light and an antireflection film 106 for preventing reflection of exposure light. The light shielding film 108 may be formed in the form of a single layer film having both a function of blocking exposure light and a function of preventing reflection, and may be formed in the form of a continuous film. The continuous film refers to the formation of the light-shielding film 104 and the antireflection film 106 at a time by changing the process parameters in a state where plasma is generated in the sputtering chamber. In the multilayer film, the light-shielding film 104 and the antireflection film 106 are formed separately And the like.

The light shielding film 104 and the antireflection film 106 may be formed of a material such as Cr, Ti, V, Co, Ni, Zr, Nb, Pd, (Zn), chromium (Cr), aluminum (Al), manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), molybdenum , Hafnium (Hf), tantalum (Ta), and tungsten (W). The light shielding film 104 and the antireflection film 106 may be formed of at least one of silicon (Si), oxygen (O), nitrogen (N), carbon (C), hydrogen (H) . The light shielding film 108 preferably has a thickness of 300 ANGSTROM to 1,100 ANGSTROM, preferably 660 ANGSTROM or less, and more preferably 470 ANGSTROM or less. The light shielding film 108 preferably has an optical density (OD) of at least 2.5 to 5 with respect to the exposure light, and has an optical density of 3.0 or more.

2, a blank mask 200 according to the present invention includes a transparent substrate 102, a structure in which a phase reversal film 112 and a light shielding film 108 are sequentially disposed on the transparent substrate 102 to convert the phase of light to 180 degrees. . Although not shown, the blank mask 200 according to the present invention may have a structure in which the phase reversal film 112 is disposed on the upper portion of the light shielding film 108, and the main body of the transparent substrate 102 on which the pattern is formed And only the phase reversal film 112 is disposed in the region.

The phase reversal film 112 may be formed of at least one of chromium (Cr), titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium ), Cr, Al, Mn, Cd, Mg, Li, Selenium, Cu, Mo, ), Tantalum (Ta), and tungsten (W). The phase reversal film 112 may include at least one of silicon (Si), oxygen (O), nitrogen (N), carbon (C), hydrogen (H) and fluorine do. The phase reversal film 112 preferably has a thickness of 200 ANGSTROM to 1000 ANGSTROM. When the phase reversal film 112 is used together with the light shielding film 108, it is preferable that the phase reversal film 112 has an etching selection ratio with the light shielding film 108 for one etching substance. Preferably, the phase reversal film 112 has a phase inversion amount of 180 DEG +/- 10 DEG with respect to light passing through the transparent substrate 102 with respect to the exposure light.

3, the blank mask 300 according to the present invention includes a light shielding film 108 and a light shielding film 108 so as to serve as an etch mask in the etching process of the light shielding film 108 and the light shielding film 108 on the transparent substrate 102, And a hard mask film 114 having an etch selectivity are sequentially arranged. Further, although not shown, the blank mask 200 according to the present invention may further include a phase reversal film disposed on the upper and lower portions of the light shielding film 108. When only the phase reversal film is disposed in the main region, The hard mask film 114 has an etch selectivity with the phase reversal film.

The hard mask layer 114 may be formed of at least one selected from the group consisting of Cr, Ti, V, Co, Ni, Zr, Nb, Pd, ), Cr, Al, Mn, Cd, Mg, Li, Selenium, Cu, Mo, ), Tantalum (Ta), and tungsten (W). The hard mask film 114 may include at least one of silicon (Si), oxygen (O), nitrogen (N), carbon (C), hydrogen (H), and fluorine do. The hard mask layer 114 has a thickness of 10 to 200 angstroms and preferably has a thickness of 30 to 100 angstroms.

Although not shown, the etch selectivity ratio of the light shielding film 108, the phase reversal film 112, and the hard mask film 114 to the upper or lower film or the etch selectivity to the transparent substrate 102 is considered An etch stopper may be disposed, and a semi-transmissive film for controlling the transmittance of the exposure light may be further formed.

Thin films including the metal used in the blank mask 100, such as the light shielding film 108, the phase reversal film 112, the hard mask film 114, the etching stopper film, and the semitransparent film according to the present invention are preferably sputtered Film deposition method.

Each metal film of the blank mask 100 according to the present invention has a stress in the range of 250 MPa or less before and after the film formation, and is optimized so as to have a flatness variation of 0.1 탆 or less. The entire metal film constituting the blank mask 100 has a stress in the range of 250 MPa or less before and after the film formation. For this purpose, each thin film having compressive stress or tensile stress can be appropriately arranged.

In the present invention, in order to control the stress and the flatness of each metal film, the metal film is formed by changing at least one of the film forming power, the film forming gas change amount, and the total volume of the film forming gas, that is, the pressure. The metal film may be, for example, a film containing chromium (Cr) or molybdenum (Mo) as a metal, and the stress includes compressive stress and tensile stress.

Conventionally, a metal film is formed in order to arbitrarily adjust the stress after film formation, and then a post-treatment step such as heat treatment or flashing treatment is performed separately. However, the metal film according to the present invention minimizes the stress change before and after the film formation by taking into account the optimum conditions according to the variation of the film forming process parameters when the thin film is formed.

In detail, in order to form a film so that the stress of each metal film or the entire metal film constituting the blank mask 100 of the present invention is controlled to 250 MPa or less, the film forming power applied per unit area should be controlled to 1 W / cm 2 to 5 W / cm 2 , And is preferably controlled within a range of 1.4 W / cm 2 to 3.3 W / cm 2 . When the film forming power per unit area is out of the above range, it is difficult to control the stress of the metal film to 250 MPa or less by changing the thickness of the metal film to be formed and the ratio of the thin film forming material. As a result, Or more.

Among the parameters for controlling the stresses of the respective metal films or the entire metal films constituting the blank mask 100, the change in the stress due to the variation amount of the deposition gas is controlled according to the injection ratio of the inert gas and the reactive gas. That is, in the present invention, each metal film constituting the blank mask 100 is filled with an inert gas containing argon (Ar) or the like and a reactive gas containing oxygen (O), nitrogen (N) and carbon (C) , Nitrogen (N 2 ), methane (CH 4 ), and nitrogen monoxide (NO) gas. In order to form each of the metal films, a thin film was formed while varying the ratio of the reactive gas to the inert gas among the deposition gases selectively used, and the stress of the metal film was measured. As a result, in order to form a metal film whose stress is controlled to 250 MPa, an inert gas in the whole injection gas should be injected at a rate of 10 vol% to 45 vol%, and preferably at a rate of 17 vol% to 25 vol%.

When nitrogen (N 2 ) gas is injected with a reactive gas to form a metal film having a minimized stress, the nitrogen (N 2 ) gas has a contrast of 0.5 To 5, and more preferably from 0.7 to 3.3. In the case where the methane (CH 4) gas introduced into the reactive gas, methane (CH 4) gas is preferably injected at a rate of 0.05 to 0.5 in preparation for the injection amount of argon (Ar) gas, and a ratio of 0.1 to 0.2 As shown in Fig. When a nitrogen monoxide (NO) gas is injected into the reactive gas, the nitrogen monoxide (NO) gas is preferably injected at a rate of 0.5 to 3 relative to the amount of the argon (Ar) gas, As shown in Fig. This is because when the injection rate of the inert gas and the injection rate of the reactive gas to the inert gas are out of the above range, the ratio of the thin film composition material of the metal film to be deposited is changed so that it is difficult to control the stress of the metal film to 250 MPa or less, The change in flatness before and after the film formation increases to 0.1 mu m or more.

Further, in order to form a film so that the stress of each metal film or the entire metal film constituting the blank mask 100 of the present invention is controlled to 250 MPa or less, the total volume of the film forming gas, that is, the pressure should be controlled to 0.01 Pa to 0.1 Pa, It is preferably controlled to 0.03 Pa to 0.07 Pa. This is because, when the injection amount of the deposition gas to be injected is higher than a certain level, collision of the particles separated from the target increases in probability, and as the energy is decreased, the stress of the deposited film is decreased, , It is difficult to control the stress of the metal film to 250 MPa or less due to the high energy of the film particles during the film formation process. As a result, the change in the flatness before and after the film formation increases to 0.1 μm or more. At this time, the deposition gas for forming the metal film was increased or decreased at the same rate depending on the pressure.

As described above, the present invention adjusts at least one or more of the above conditions by using the film forming power, the variation amount of the film forming gas, and the total volume of the film forming gas as variables, so that each metal film or multilayer metal film has a stress change And a blank mask having a metal film optimized so as to have a flatness variation of 0.1 mu m or less before and after the film formation.

In addition, the stress-controlled metal film according to the present invention has at least the same or better etching characteristics and chemical resistance properties as compared to the conventional metal film.

(Example)

In the embodiment of the present invention, a metal film is formed on a metal film constituting a blank mask by adjusting the above parameters using the film forming power, the thickness of the metal film, the amount of change in the film forming gas, and the process pressure as parameters and the stress and the flatness And the stress and flatness changes of each parameter were measured.

A metal film according to an embodiment of the present invention was formed of a chromium (Cr) compound on a transparent substrate, formed to a thickness of about 600 angstroms, and formed into a single layer or a multilayer.

Tabernacle  Flatness change with power

Each deposition gas
Flow rate (sccm) Tablet Power
(w / cm2) Stress
(MPa) Before the tabernacle
TIR (탆) After the tabernacle
TIR (탆) △ TIR
(탆) Example 1
0 to 20
One 122 0.063 0.136 0.073 Example 2 3 146 0.067 0.151 0.084 Example 3 5 228 0.064 0.160 0.096

Referring to Table 1, the flatness of the transparent substrate before film formation of the metal film was measured, and the film formation power was changed for the same time on the transparent substrate, and the remaining process conditions were the same, .

Referring to Examples 1 to 3, when the film forming power for forming the antireflection film under the same film forming conditions is within the range of 1 W / cm 2 to 5 W / cm 2 , the stress of the metal film is controlled to 250 MPa or less, Is controlled.

Tabernacle  Change in flatness with gas flow rate

Inactive
gas Injection rate (%)
(Injection amount / total amount) Stress
(MPa) Before the tabernacle
TIR (탆) After the tabernacle
TIR (탆) △ TIR
(탆) Example 4

Ar

5 264 0.061 0.188 0.127 Example 5 10 236 0.060 0.158 0.098 Example 6 25 162 0.059 0.136 0.077 Example 7 40 221 0.063 0.146 0.083 Example 8 45 229 0.063 0.154 0.091

Inactive
gas Reactivity
gas Injection rate
(Reactive gas / inert gas) Stress
(MPa) Before the tabernacle
TIR (탆) After the tabernacle
TIR (탆) △ TIR
(탆) Example 9




Ar





N2

0.5 243 0.060 0.156 0.096 Example 10 One 230 0.064 0.150 0.086 Example 11 3 218 0.062 0.143 0.081 Example 12 5 194 0.061 0.135 0.074 Example 13
CH4

0.05 184 0.063 0.132 0.069 Example 14 0.1 193 0.061 0.133 0.072 Example 15 0.2 227 0.061 0.137 0.076 Example 16 0.5 239 0.062 0.156 0.094 Example 17
NO

0.5 241 0.061 0.322 0.091 Example 18 One 234 0.062 0.146 0.084 Example 19 2 218 0.063 0.143 0.080 Example 20 3 206 0.061 0.136 0.075

Referring to Table 2, the same reactive and inert gases were injected and the metal film was formed by changing the injection ratio of only an inert gas, for example, argon (Ar) gas to the whole gas. As a result, Likewise, when the injection amount of the inert gas is injected at a rate of 10 vol% to 45 vol%, the stress of the metal film is controlled to 250 MPa or less, and the flatness is controlled to 0.1 탆 or less. However, when the injection amount of argon (Ar) gas is injected in an amount less than 10 vol%, the stress of the metal film increases to 250 MPa or more.

Referring to Table 3, as a result of depositing a metal film by changing one reactive gas to the same ratio of inert gas, it was found that in the case of nitrogen (N 2 ) as in Examples 9 to 12, The stress of the metal film was controlled to be 250 MPa or less. Also, as in the case of Examples 13 to 16, when methane (CH 4 ) is injected at a rate of 0.05 to 0.5 based on the inert gas, the stress of the metal film is controlled to 250 MPa or less. As in Examples 17 to 20, In the case of nitrogen monoxide (NO), when the implantation amount is 0.5 to 3, the stress of the metal film is controlled to 250 MPa or less, and the flatness is controlled to 0.1 탆 or less.

Tabernacle  Flatness change due to total volume change of gas

Film gas volume
(Pressure, Pa) Stress
(MPa) Before the tabernacle
TIR (탆) After the tabernacle
TIR (탆) △ TIR
(탆) Example 21 0.01 239 0.062 0.153 0.091 Example 22 0.05 221 0.064 0.150 0.086 Example 23 0.07 209 0.061 0.143 0.082 Example 24 0.1 196 0.061 0.140 0.079

In Table 4, the same film-forming gas is injected onto the transparent substrate to form a metal film, and the amount of gas injected into the film-forming chamber is changed in a state where the open state of the valves connected to the exhaust pump is kept the same, Stress and flatness of the metal film were measured in accordance with the volume change of the entire deposition gas remaining in the chamber. At this time, the ratio of the gas to be injected was changed at the same ratio according to the volume change.

With reference to Examples 21 to 24, the volume of the film forming gas for forming the metal film under the same film forming conditions, that is, the stress of the metal film was controlled to 250 MPa or less within the pressure range of 0.01 to 0.1 Pa, As shown in Fig.

In addition, in the embodiment of the present invention, although the metal film is formed to a thickness of about 600 Å, it is confirmed that the stress of the metal film changes to 250 MPa or less within the range of the same process parameters even when the metal film is formed to a thickness of about 100 Å to 700 Å there was.


Power
(w / cm2) Inactive dose
(%) Reactive gas
/ Inert gas pressure
(Pa) Stress
(Mpa) Before TIR
(탆) TIR after deposition
(탆) △ TIR
(탆) N2 CH4 NO Example 25 2 40 1.3 0.2 0






0.03






196 0.061 .0147 0.086 Example 26 2 20 3 0 One 175 0.063 0.135 0.072 Example 27 4 40 1.3 0.2 0 233 0.065 0.162 0.097 Example 28 4 20 3 0 One 218 0.060 0.152 0.092 Example 29





3






20 2
0
2 218 0.062 0.157 0.082 Example 30 30 1.3 One 216 0.060 0.147 0.087 Example 31 40 0.5 One 212 0.059 0.143 0.084 Example 32 45 0.7 0.5 0 231 0.061 0.146 0.085 Example 33 40 2 0 0.5 196 0.061 0.140 0.079 Example 34 25 2.9 0.1 0 185 0.062 0.139 0.077 Example 35
40
1.4 0.1
0
215 0.063 0.145 0.082 Example 36 1.2 0.3 222 0.061 0.147 0.086 Example 37 One 0.5 241 0.060 0.155 0.095 Example 38
25
2
0
One 215 0.061 0.145 0.084 Example 39 1.5 1.5 208 0.062 0.143 0.081 Example 40 One 2 217 0.061 0.140 0.079 Example 41
20

2.5 0 1.5 0.1 231 0.062 0.153 0.091 Example 42 3.8 0.2 0 0.05 219 0.062 0.144 0.082 Example 43 2.5 0 1.5 0.05 224 0.061 0.147 0.086 Example 44 2.5 0 1.5 0.07 199 0.062 0.138 0.076

In order to form a metal film having a stress change of 250 MPa or less according to an embodiment of the present invention and having a flatness variation of 0.1 탆 or less before and after the film formation, the film formation power, And at least one of the total volume parameters of the deposition gas was changed to form a metal film.

Referring to Table 5, the metal film according to the embodiment of the present invention can be fabricated in accordance with the film forming power, the amount of change in the film forming gas, and the total volume of the film forming gas within the range of the above Examples 1 to 24 It is found that the metal film has a stress change of 250 MPa or less and is formed so as to have a flatness change of 0.1 탆 or less before and after the film formation.

As described above, according to the present invention, when the multilayer or multilayer metal film forming the blank mask is formed, the stress of the metal film is adjusted to 250 MPa or less by changing the above conditions using the film forming power, the variation amount of the film forming gas, It is possible to form a blank mask optimized so that the metal film has a flat change of 0.1 mu m or less before and after the film formation.

In addition, since the present invention forms a photomask using a blank mask having a change in stress of 250 MPa or less before and after the formation of each thin film and having a superior flatness change, the pattern density of the photomask It is possible to form a high-quality photomask which does not cause an error.

Although the present invention has been described with reference to the experimental examples, the technical scope of the present invention is not limited to the ranges described in the above experimental examples. It will be apparent to those skilled in the art that various modifications and improvements can be made to the examples described above. It is apparent from the description of the claims that the form of such modification or improvement can be included in the technical scope of the present invention.

100, 200, 300: blank mask
102: transparent substrate
104:
106: antireflection film
108: Shading film
110: photoresist film
112: phase reversal film
114: hard mask film

Claims (17)

As a blank mask in which a metal film is formed on a transparent substrate,
Wherein the metal film includes at least one of a light-shielding film, an antireflection film, a semitransmissive film, a phase reversal film, a hard mask film, an etch stop film, and a semi-
Wherein the deposited metal film has a stress change of 250 MPa or less. The method according to claim 1,
Wherein the metal film has a flatness variation of 0.1 占 퐉 or less with respect to the transparent substrate before and after the film formation. The method according to claim 1,
Wherein when the metal film is formed of a multilayer film, the entire metal film has a stress change of 250 MPa or less. The method of claim 3,
Wherein the entire metal film has a flatness variation of 0.1 占 퐉 or less with respect to the transparent substrate before and after the film formation. The method according to claim 1,
Each of the metal films may be formed of at least one selected from the group consisting of Cr, Ti, V, Co, Ni, Zr, Nb, Pd, (Al), manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), molybdenum (Mo), hafnium (Ta), and tungsten (W). 6. The method of claim 5,
Wherein each of the metal films further comprises at least one of silicon (Si), oxygen (O), nitrogen (N), carbon (C), hydrogen (H), and fluorine (F). The method according to claim 1,
Wherein the metal film has a thickness of from 10 A to 1,100 ANGSTROM. The method according to claim 1,
Wherein when the metal film comprises at least one of a light-shielding film and an antireflection film, the metal film has an optical density of 3.0 or more. The method according to claim 1,
Wherein when the metal film is a phase reversal film, the phase reversal film has a phase reversal amount of 180 DEG +/- 10 DEG. 1. A blank mask manufacturing method for forming a metal film on a transparent substrate,
At least one metal film of a light-shielding film, an antireflection film, a semi-transmissive film, a phase reversal film, a hard mask film, an etch stop film, and a transflective film is formed on the transparent substrate by a sputtering method,
Wherein the metal film is formed so as to have a stress change of 250 MPa or less by changing at least one of the film forming power, the film forming gas injection amount, and the film forming pressure. 11. The method of claim 10,
Wherein the metal film is formed with the film forming power of 1 W / cm 2 to 5 W / cm 2 . 11. The method of claim 10,
Wherein the metal film is formed by injecting a deposition gas containing an inert gas and a reactive gas, and the inert gas is injected at a rate of 10 vol% to 45 vol% with respect to the total injection gas. 11. The method of claim 10,
Wherein the metal film is formed by implanting a deposition gas containing an inert gas and a reactive gas and the reactive gas includes at least one of nitrogen (N 2 ), methane (CH 4 ), and nitrogen monoxide (NO) Of the blank mask. 14. The method of claim 13,
Wherein the nitrogen (N 2 ) gas is injected at a rate of 0.5 to 5 with respect to the amount of the inert gas. 14. The method of claim 13,
Wherein the methane (CH 4 ) gas is injected at a rate of 0.05 to 0.5 with respect to an injection amount of the inert gas. 14. The method of claim 13,
Wherein the nitrogen monoxide (NO) gas is injected at a rate of 0.5 to 3 with respect to the injection amount of the inert gas. 11. The method of claim 10,
Wherein the metal film is formed at the film forming pressure of 0.01 to 0.1 Pa.
KR1020130057465A 2013-05-22 2013-05-22 Blankmask and method for fabricating of the same KR20140137072A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170021193A (en) * 2015-08-17 2017-02-27 주식회사 에스앤에스텍 Phase Shift Blankmask, and Method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170021193A (en) * 2015-08-17 2017-02-27 주식회사 에스앤에스텍 Phase Shift Blankmask, and Method for manufacturing the same
KR101881818B1 (en) * 2015-08-17 2018-07-25 (주)에스앤에스텍 Phase Shift Blankmask, and Method for manufacturing the same

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