SG11201803116UA - Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201803116UA
SG11201803116UA SG11201803116UA SG11201803116UA SG11201803116UA SG 11201803116U A SG11201803116U A SG 11201803116UA SG 11201803116U A SG11201803116U A SG 11201803116UA SG 11201803116U A SG11201803116U A SG 11201803116UA SG 11201803116U A SG11201803116U A SG 11201803116UA
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
phase shift
mask
mask blank
Prior art date
Application number
SG11201803116UA
Inventor
Osamu Nozawa
Ryo Ohkubo
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201803116UA publication Critical patent/SG11201803116UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201803116UA 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device SG11201803116UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015218455 2015-11-06
PCT/JP2016/081710 WO2017077915A1 (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201803116UA true SG11201803116UA (en) 2018-05-30

Family

ID=58662562

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201908855R SG10201908855RA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG11201803116UA SG11201803116UA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG10201911774WA SG10201911774WA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201908855R SG10201908855RA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201911774WA SG10201911774WA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US10915016B2 (en)
JP (3) JP6158460B1 (en)
KR (3) KR102398583B1 (en)
SG (3) SG10201908855RA (en)
TW (3) TWI666509B (en)
WO (1) WO2017077915A1 (en)

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US11119400B2 (en) 2017-04-08 2021-09-14 Hoya Corporation Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
US11281089B2 (en) 2017-02-27 2022-03-22 Hoya Corporation Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

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SG11202002544SA (en) * 2017-09-21 2020-04-29 Hoya Corp Mask blank, transfer mask, and method for manufacturing semiconductor device
US11086211B2 (en) * 2017-11-08 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Masks and methods of forming the same
JP6547019B1 (en) * 2018-02-22 2019-07-17 Hoya株式会社 Mask blank, phase shift mask and method of manufacturing semiconductor device
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JP7437959B2 (en) * 2019-03-07 2024-02-26 Hoya株式会社 Modified photomask and display device manufacturing method
WO2020179463A1 (en) * 2019-03-07 2020-09-10 Hoya株式会社 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7313166B2 (en) 2019-03-18 2023-07-24 Hoya株式会社 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7280171B2 (en) * 2019-12-05 2023-05-23 信越化学工業株式会社 PHOTOMASK BLANK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK

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US11281089B2 (en) 2017-02-27 2022-03-22 Hoya Corporation Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
US11762279B2 (en) 2017-02-27 2023-09-19 Hoya Corporation Mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device
US12007684B2 (en) 2017-02-27 2024-06-11 Hoya Corporation Mask blank, method of manufacturing imprint mold, method of manufacturing transfer mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US11119400B2 (en) 2017-04-08 2021-09-14 Hoya Corporation Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
KR102368405B1 (en) 2022-02-28
US20210149294A1 (en) 2021-05-20
JPWO2017077915A1 (en) 2017-11-02
SG10201908855RA (en) 2019-10-30
KR102416957B1 (en) 2022-07-05
US11630388B2 (en) 2023-04-18
TWI696882B (en) 2020-06-21
JP6325153B2 (en) 2018-05-16
KR20180075495A (en) 2018-07-04
JP2018120245A (en) 2018-08-02
KR102398583B1 (en) 2022-05-17
JP6158460B1 (en) 2017-07-05
JP2017146628A (en) 2017-08-24
TW201727355A (en) 2017-08-01
US20180299767A1 (en) 2018-10-18
US10915016B2 (en) 2021-02-09
JP6759270B2 (en) 2020-09-23
KR20220066426A (en) 2022-05-24
SG10201911774WA (en) 2020-02-27
TW201835674A (en) 2018-10-01
TW201935128A (en) 2019-09-01
WO2017077915A1 (en) 2017-05-11
TWI666509B (en) 2019-07-21
KR20220025954A (en) 2022-03-03
TWI632422B (en) 2018-08-11

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