SG11201605542RA - Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate - Google Patents

Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate

Info

Publication number
SG11201605542RA
SG11201605542RA SG11201605542RA SG11201605542RA SG11201605542RA SG 11201605542R A SG11201605542R A SG 11201605542RA SG 11201605542R A SG11201605542R A SG 11201605542RA SG 11201605542R A SG11201605542R A SG 11201605542RA SG 11201605542R A SG11201605542R A SG 11201605542RA
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
semiconductor
manufacturing
semiconductor device
substrate
Prior art date
Application number
SG11201605542RA
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Publication of SG11201605542RA publication Critical patent/SG11201605542RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
SG11201605542RA 2014-01-07 2015-01-07 Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate SG11201605542RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410006568.4A CN103681992A (en) 2014-01-07 2014-01-07 Semiconductor substrate, semiconductor device and semiconductor substrate manufacturing method
PCT/CN2015/070251 WO2015103976A1 (en) 2014-01-07 2015-01-07 Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate

Publications (1)

Publication Number Publication Date
SG11201605542RA true SG11201605542RA (en) 2016-08-30

Family

ID=50318900

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201605542RA SG11201605542RA (en) 2014-01-07 2015-01-07 Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate

Country Status (8)

Country Link
US (1) US10249788B2 (en)
EP (1) EP3093891B1 (en)
JP (1) JP2017507478A (en)
KR (1) KR20160104723A (en)
CN (1) CN103681992A (en)
DK (1) DK3093891T3 (en)
SG (1) SG11201605542RA (en)
WO (1) WO2015103976A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681992A (en) * 2014-01-07 2014-03-26 苏州晶湛半导体有限公司 Semiconductor substrate, semiconductor device and semiconductor substrate manufacturing method
US10879134B2 (en) * 2016-06-22 2020-12-29 Intel Corporation Techniques for monolithic co-integration of silicon and III-N semiconductor transistors
DE102016013540A1 (en) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH III-V semiconductor diode
JP6863423B2 (en) * 2019-08-06 2021-04-21 信越半導体株式会社 Substrates for electronic devices and their manufacturing methods
WO2023100577A1 (en) * 2021-12-01 2023-06-08 信越半導体株式会社 Substrate for electronic device and production method therefor
CN114759126B (en) * 2022-06-13 2022-09-20 江苏第三代半导体研究院有限公司 Semiconductor device structure based on nitride single crystal substrate and preparation method thereof
CN116779688A (en) * 2023-07-28 2023-09-19 合肥安芯睿创半导体有限公司 Silicon carbide Schottky diode with junction P+ protection groove structure and manufacturing method

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPS63193517A (en) * 1987-02-06 1988-08-10 Nec Corp Composite single crystal substrate
JPH07335511A (en) * 1994-06-13 1995-12-22 Nippon Telegr & Teleph Corp <Ntt> Bonded wafer
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US6333208B1 (en) * 1999-07-13 2001-12-25 Li Chiung-Tung Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
US6984571B1 (en) * 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US7348610B2 (en) * 2005-02-24 2008-03-25 International Business Machines Corporation Multiple layer and crystal plane orientation semiconductor substrate
CN101017864A (en) * 2006-02-08 2007-08-15 中国科学院半导体研究所 Silicon base covariant underlay with the ultrathin carbon silicon middle layer and its preparing method
JP5009124B2 (en) * 2007-01-04 2012-08-22 コバレントマテリアル株式会社 Manufacturing method of semiconductor substrate
JP4888276B2 (en) * 2007-08-09 2012-02-29 三菱電機株式会社 Semiconductor wafer equipment
WO2010056083A2 (en) * 2008-11-14 2010-05-20 삼성엘이디 주식회사 Vertical/horizontal light-emitting diode for semiconductor
CN102208337B (en) * 2010-03-30 2014-04-09 杭州海鲸光电科技有限公司 Silicon-base compound substrate and manufacturing method thereof
US8298923B2 (en) * 2010-10-27 2012-10-30 International Business Machinces Corporation Germanium-containing release layer for transfer of a silicon layer to a substrate
JP2013247362A (en) * 2012-05-29 2013-12-09 Samsung Corning Precision Materials Co Ltd Method for manufacturing thin film bonded substrate for semiconductor element
CN103035496B (en) * 2012-12-11 2016-03-23 广州市众拓光电科技有限公司 A kind of growth GaN film on a si substrate and its preparation method and application
CN102978695A (en) * 2012-12-12 2013-03-20 东莞市中镓半导体科技有限公司 Concealed-structure substrate for epitaxial growth of semiconductor device
CN103296066B (en) * 2013-05-31 2015-09-16 华南理工大学 Growth GaN film on strontium aluminate tantalum lanthanum substrate and preparation method thereof, application
CN103681992A (en) * 2014-01-07 2014-03-26 苏州晶湛半导体有限公司 Semiconductor substrate, semiconductor device and semiconductor substrate manufacturing method

Also Published As

Publication number Publication date
US10249788B2 (en) 2019-04-02
DK3093891T3 (en) 2019-05-06
JP2017507478A (en) 2017-03-16
EP3093891A4 (en) 2017-01-25
EP3093891A1 (en) 2016-11-16
CN103681992A (en) 2014-03-26
KR20160104723A (en) 2016-09-05
US20160315220A1 (en) 2016-10-27
WO2015103976A1 (en) 2015-07-16
EP3093891B1 (en) 2019-03-06

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