SG10201908855RA - Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Info

Publication number
SG10201908855RA
SG10201908855RA SG10201908855RA SG10201908855RA SG 10201908855R A SG10201908855R A SG 10201908855RA SG 10201908855R A SG10201908855R A SG 10201908855RA SG 10201908855R A SG10201908855R A SG 10201908855RA
Authority
SG
Singapore
Prior art keywords
mask
light shielding
film
manufacturing
phase shift
Prior art date
Application number
Inventor
Osamu Nozawa
Ryo Ohkubo
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10201908855RA publication Critical patent/SG10201908855RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Clientref. P27062SG Our ref. P068-SG 72 [] MASK BLANK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDOCTOR DEVICE Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high- precision and fine pattern on a light shielding film. The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50atom% or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574eV or less. FIG. 1
SG10201908855R 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device SG10201908855RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015218455 2015-11-06

Publications (1)

Publication Number Publication Date
SG10201908855RA true SG10201908855RA (en) 2019-10-30

Family

ID=58662562

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201908855R SG10201908855RA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG11201803116UA SG11201803116UA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG10201911774WA SG10201911774WA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG11201803116UA SG11201803116UA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG10201911774WA SG10201911774WA (en) 2015-11-06 2016-10-26 Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US10915016B2 (en)
JP (3) JP6158460B1 (en)
KR (3) KR102416957B1 (en)
SG (3) SG10201908855RA (en)
TW (3) TWI666509B (en)
WO (1) WO2017077915A1 (en)

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US11086211B2 (en) * 2017-11-08 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Masks and methods of forming the same
JP6547019B1 (en) * 2018-02-22 2019-07-17 Hoya株式会社 Mask blank, phase shift mask and method of manufacturing semiconductor device
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Also Published As

Publication number Publication date
TWI666509B (en) 2019-07-21
JP2017146628A (en) 2017-08-24
KR20220025954A (en) 2022-03-03
TWI696882B (en) 2020-06-21
JP6158460B1 (en) 2017-07-05
US10915016B2 (en) 2021-02-09
SG11201803116UA (en) 2018-05-30
JP2018120245A (en) 2018-08-02
TWI632422B (en) 2018-08-11
TW201935128A (en) 2019-09-01
KR20180075495A (en) 2018-07-04
SG10201911774WA (en) 2020-02-27
TW201835674A (en) 2018-10-01
TW201727355A (en) 2017-08-01
KR102398583B1 (en) 2022-05-17
KR102416957B1 (en) 2022-07-05
JP6759270B2 (en) 2020-09-23
US20210149294A1 (en) 2021-05-20
JP6325153B2 (en) 2018-05-16
WO2017077915A1 (en) 2017-05-11
US11630388B2 (en) 2023-04-18
US20180299767A1 (en) 2018-10-18
KR102368405B1 (en) 2022-02-28
KR20220066426A (en) 2022-05-24
JPWO2017077915A1 (en) 2017-11-02

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